Jehem: /* Aligner: Maskless 02 */

2026-01-13T11:53:40Z

Aligner: Maskless 02

← Older revision		Revision as of 13:53, 13 January 2026
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	==Aligner: Maskless 02==		=Aligner: Maskless 02=
	[[File:Aligner MLA 2.jpg\|400px\|thumb\|Aligner: Maskless 02 is located in E-5.]]		[[File:Aligner MLA 2.jpg\|400px\|thumb\|Aligner: Maskless 02 is located in E-5.]]
	MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).		MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).
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	Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager] - '''requires login'''		Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager] - '''requires login'''

	===Exposure dose and defocus===		==Exposure dose and defocus==
	[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_02\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_02\|Information on UV exposure dose]]

	===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing\|Process information]]===		==[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing\|Process information]]==
	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Exposure_technology\|Exposure technology]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Exposure_technology\|Exposure technology]]
	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters\|Process Parameters]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters\|Process Parameters]]
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	<br/>		<br/>

	=== Equipment performance and process related parameters ===		==Equipment performance and process related parameters==

	{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

Jehem: /* Exposure dose and defocus */

2026-01-12T09:55:49Z

Exposure dose and defocus

← Older revision		Revision as of 11:55, 12 January 2026
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	===Exposure dose and defocus===		===Exposure dose and defocus===
	[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_02\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_02\|Information on UV exposure dose]]

	===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing\|Process information]]===		===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing\|Process information]]===

Jehem: Created page with "==Aligner: Maskless 02== Aligner: Maskless 02 is located in E-5. MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023). '''Special features''' Optical Autofocus Backside Alignment Basic Gray Scale Exposure Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate High Aspect Ratio Mode for exposure of thick resists 200 x..."

2026-01-12T09:16:08Z

Created page with "==Aligner: Maskless 02== 400px|thumb|Aligner: Maskless 02 is located in E-5. MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023). '''Special features''' *Optical Autofocus *Backside Alignment *Basic Gray Scale Exposure *Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate *High Aspect Ratio Mode for exposure of thick resists *200 x..."

New page

==Aligner: Maskless 02==
[[File:Aligner MLA 2.jpg|400px|thumb|Aligner: Maskless 02 is located in E-5.]]
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).

'''Special features'''
*Optical Autofocus
*Backside Alignment
*Basic Gray Scale Exposure
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*High Aspect Ratio Mode for exposure of thick resists
*200 x 200 mm exposure field
*Separate conversion PC

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].

'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]'''

Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager] - '''requires login'''

===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_02|Information on UV exposure dose]]

===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Alignment|Alignment]]

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login''' 
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:300px"

! QC Recipe:
! Dose and defocus test on 1.5µm AZ5214E
|-
|Dose test
|Last QC value ± 20 mJ/cm2 (9 steps total)
|-
|Defoc test
|Last QC value ± 8 (9 steps total)
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|Dose
|none
|-
|Defoc
|none
|-
|}
|-
|}
Dose and defoc values are reported in the QC data sheet.
|}
 
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login''' 
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:300px"

! QC Recipe:
! Alignment accuracy test
|-
|Topside alignment
|Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.

Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
|-
|Backside alignment
|Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.

Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|Topside alignment error
|>0.5µm
|-
|Backside alignment error
|>1µm
|-
|}
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
 

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
*375 nm 
(laser diode arrays)
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
*Optical
*Pneumatic
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1 µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment, ±0.5µm
*Backside alignment, ±1.0µm
*Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm2 area)

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 200x200 mm2
* 200 mm wafer
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 3x3 mm2 1)
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
 Total height variation across the substrate must be less than ±90 µm - including wafer bow
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}

1) with optical autofocus

Specific Process Knowledge/Lithography/UVExposure/aligner MLA2 - Revision history

Jehem: /* Aligner: Maskless 02 */

Jehem: /* Exposure dose and defocus */