Specific Process Knowledge/Lithography/UVExposure/aligner MLA1 - Revision history

Jehem: /* Aligner: Maskless 01 */

2026-01-13T11:52:53Z

Aligner: Maskless 01

← Older revision		Revision as of 13:52, 13 January 2026
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	== Aligner: Maskless 01 ==		=Aligner: Maskless 01=

	[[Image:Heidelberg_MLA100.jpg\|400px\|thumb\|Aligner: Maskless 01 is located in E-4.]]		[[Image:Heidelberg_MLA100.jpg\|400px\|thumb\|Aligner: Maskless 01 is located in E-4.]]
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	Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login'''		Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login'''

	===Exposure dose and defocus===		==Exposure dose and defocus==
	[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_01\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_01\|Information on UV exposure dose]]

	===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing\|Process information]]===		==[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing\|Process information]]==
	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology\|Exposure technology]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology\|Exposure technology]]
	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters\|Process parameters]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters\|Process parameters]]
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	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner\|Optimal use of the maskless aligner]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner\|Optimal use of the maskless aligner]]

	===Quality Control (QC)===		==Quality Control (QC)==
	{\| border="1" cellspacing="2" cellpadding="2" colspan="3"		{\| border="1" cellspacing="2" cellpadding="2" colspan="3"
	\|bgcolor="#98FB98" \|'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Dose and Defoc'''		\|bgcolor="#98FB98" \|'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Dose and Defoc'''
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	<br/>		<br/>

	=== Equipment performance and process related parameters ===		==Equipment performance and process related parameters==

	{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

Jehem: /* Aligner: Maskless 01 */

2026-01-13T11:37:01Z

Aligner: Maskless 01

← Older revision		Revision as of 13:37, 13 January 2026
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	[[Image:Heidelberg_MLA100.jpg\|400px\|thumb\|Aligner: Maskless 01 is located in E-4.]]		[[Image:Heidelberg_MLA100.jpg\|400px\|thumb\|Aligner: Maskless 01 is located in E-4.]]

	~~The logon password for the PC is "mla" (without quotation marks).~~

	The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017.		The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017.

Jehem: /* Exposure dose and defocus */

2026-01-12T09:55:31Z

Exposure dose and defocus

← Older revision		Revision as of 11:55, 12 January 2026
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	===Exposure dose and defocus===		===Exposure dose and defocus===
	[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_01\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_01\|Information on UV exposure dose]]

	===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing\|Process information]]===		===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing\|Process information]]===

Jehem: Created page with "== Aligner: Maskless 01 == Aligner: Maskless 01 is located in E-4. The logon password for the PC is "mla" (without quotation marks). The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The sys..."

2026-01-12T09:15:49Z

Created page with "== Aligner: Maskless 01 == 400px|thumb|Aligner: Maskless 01 is located in E-4. The logon password for the PC is "mla" (without quotation marks). The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The sys..."

New page

== Aligner: Maskless 01 ==

[[Image:Heidelberg_MLA100.jpg|400px|thumb|Aligner: Maskless 01 is located in E-4.]]

The logon password for the PC is "mla" (without quotation marks).

The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017.
It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask.
The system offers top side alignment with high accuracy.

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].

The user manual and contact information can be found in LabManager:

Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login'''

===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_01|Information on UV exposure dose]]

===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters|Process parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login''' 
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2" align="center"

! QC:
! Dose and defocus test on 1.5µm AZ5214E
! QC limits
|-
|Dose test
|
Step size is 5 mJ/cm2 
Test range is last QC value ± 10 mJ/cm2 (5 steps total)
|none
|-
|Defoc test
|
Step size is 1 defoc 
Test range is last QC value ± 4 (5 steps total)
|none
|-
|}

|}
|}
 

{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login''' 
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2" align="center"

! QC Recipe:
! Alignment accuracy test
! QC limits
|-
|Topside alignment
|
Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing. 
Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
| Must be better than 1µm
|-
|}
| align="center" valign="top"|
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
 

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
365nm (LED), FWHM=8nm
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
Pneumatic
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
Top side only, ±2µm (±1µm can be achieved)

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 125x125 mm2
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm2
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
 Total height variation across the substrate must be less than ±40 µm - including wafer bow
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}