Specific Process Knowledge/Lithography/UVExposure/aligner MA6-2 - Revision history

Jehem at 11:52, 13 January 2026

2026-01-13T11:52:12Z

← Older revision		Revision as of 13:52, 13 January 2026
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	The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.		The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.
			<br clear="all" />

	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==

Jehem: /* Aligner: MA6-2 */

2026-01-13T11:51:31Z

Aligner: MA6-2

← Older revision		Revision as of 13:51, 13 January 2026
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	==Aligner: MA6-2==		=Aligner: MA6-2=
	[[Image:AlignerMA6-2 in E-4.jpg\|400px\|thumb\|The Aligner: MA6-2 is located in E-4.]]		[[Image:AlignerMA6-2 in E-4.jpg\|400px\|thumb\|The Aligner: MA6-2 is located in E-4.]]

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	The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager] - '''requires login'''		The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager] - '''requires login'''

	===Exposure dose===		==Exposure dose==
	[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-2\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-2\|Information on UV exposure dose]]

	===Process information===		==Process information==
	The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.		The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.

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	\|}		\|}

	===Alignment===		==Alignment==
	'''Top Side Alignment:'''		'''Top Side Alignment:'''
	*TSA microscope standard objectives: 5X, and 10X (20X available)		*TSA microscope standard objectives: 5X, and 10X (20X available)
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	**High: 450µm x 650µm (950µm x 650µm full field)		**High: 450µm x 650µm (950µm x 650µm full field)

	=== Equipment performance and process related parameters ===		==Light intensity and uniformity after lamp ignition==

			[[image:MA6-2_light_intensity_and_uniformity_from_ignition.png\|400px\|right\|thumb\|Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.]]

			The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.

			If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.

			The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.

			==Equipment performance and process related parameters==

	{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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	\|}		\|}

	<sup>1)</sup> Not available ~~yet~~. Requires tool change. Would require safety investigation (and a dedicated project) to become available.		<sup>1)</sup> Not available. Requires tool change. Would require safety investigation (and a dedicated project) to become available.

	~~===Light intensity and uniformity after lamp ignition===~~

	[[image:MA6-2_light_intensity_and_uniformity_from_ignition.png\|400px\|right\|thumb\|Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.]]

	The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.

	~~If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.~~

	~~The non-uniformity of the light, in CI mode, is unaffected by the stabilization time~~.
	<br clear="all" />		<br clear="all" />

Jehem: /* Exposure dose */

2026-01-12T09:54:45Z

Exposure dose

← Older revision		Revision as of 11:54, 12 January 2026
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	===Exposure dose===		===Exposure dose===
	[[Specific Process Knowledge/Lithography/Resist#Aligner:_MA6-2\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-2\|Information on UV exposure dose]]

	===Process information===		===Process information===

Jehem: Created page with "==Aligner: MA6-2== The Aligner: MA6-2 is located in E-4. The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microsc..."

2026-01-12T09:14:57Z

Created page with "==Aligner: MA6-2== 400px|thumb|The Aligner: MA6-2 is located in E-4. The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microsc..."

New page

==Aligner: MA6-2==
[[Image:AlignerMA6-2 in E-4.jpg|400px|thumb|The Aligner: MA6-2 is located in E-4.]]

The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.

'''Training videos:'''

[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]

[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]

The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager] - '''requires login'''

===Exposure dose===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_MA6-2|Information on UV exposure dose]]

===Process information===
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: MA6-2'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=339 The QC procedure for Aligner: MA6-2] - '''requires login''' 
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=339 The newest QC data for Aligner: MA6-2] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:300px"

! QC Recipe:
! Manual intensity measurement
|-
|Measurement area
|100 mm
|-
|Number of measurements
|5
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: MA6-2
|-
|Nominal intensity
|11 mW/cm2 @ 365 nm
|-
|Intensity deviation from nominal
|≤5%
|-
|Intensity non-uniformity
|≤2%
|-
|}
|-
|}
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}

===Alignment===
'''Top Side Alignment:'''
*TSA microscope standard objectives: 5X, and 10X (20X available)
*TSA microscope special objectives: 11.25X offset (for smaller separation)

*Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
**Alignment of smaller separations is possible using the "scan microscope" function
*Maximum distance between TSA microscope objectives: 160 mm
*TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

'''BackSide Alignment:'''
*Minimum distance between BSA microscope objectives: 15 mm
*Maximum distance between BSA microscope objectives: 100 mm
*BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
*BSA chuck view ranges:
**2": X +/- 8-22mm; Y +/- 0-6mm
**4": X +/- 14-46mm; Y +/- 0-10mm
**6": X +/- 14-69mm; Y +/- 0-10mm (OBS: Max. separation of BSA microscopes is 100mm)

'''Microscope field of view (W x H, splitfield):'''
*TSA 5X
**Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
**Camera: 350µm x 500µm (700µm x 500µm full field)
*TSA 10X
**Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
**Camera: 150µm x 250µm (350µm x 250µm full field)
*TSA special
**Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
**Camera: 150µm x 200µm (300µm x 200µm full field)
*BSA camera
**Low: 1.5mm x 2mm (3mm x 2mm full field)
**High: 450µm x 650µm (950µm x 650µm full field)

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Mask alignment and UV exposure, potentially DUV exposure 1)

Bond alignment
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
*broadband (i-, g-, h-line)
*365 nm (i-line)
*"UV300" (280-350 nm)
*DUV (240 nm) 1)
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
Typically 1.25 µm, possibly down to 0.8 µm 1)
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
*7x7 inch
*special holder for 4 x 2" designs on 5x5 inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA), ±1µm (machine spec: ±2µm)
*Backside (BSA), ±2µm (machine spec: ±5µm)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* small pieces 1x1cm
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials except copper and steel

Dedicated chuck for III-V materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}

1) Not available yet. Requires tool change. Would require safety investigation (and a dedicated project) to become available.

===Light intensity and uniformity after lamp ignition===

[[image:MA6-2_light_intensity_and_uniformity_from_ignition.png|400px|right|thumb|Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.]]

The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.

If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.

The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.