Specific Process Knowledge/Lithography/UVExposure/aligner MA6-1 - Revision history

Jehem at 11:46, 26 June 2026

2026-06-26T11:46:02Z

← Older revision		Revision as of 13:46, 26 June 2026
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	==Alignment mark design and locations==		==Alignment mark design and locations==
	[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks\|Alignment mark design and locations]].		[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks\|Alignment mark design and locations]].

	~~<!--~~
	~~==Quality Control (QC)==~~
	~~{\| border="1" cellspacing="2" cellpadding="2" colspan="3"~~
	~~\|bgcolor="#98FB98" \|'''Quality Control (QC) for KS Aligner'''~~
	\|-
	\|
	*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=44 The QC procedure for Aligner: MA6-1] - '''requires login'''<br>
	*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=44 The newest QC data for Aligner: MA6-1] - '''requires login'''
	~~{\| {{table}}~~
	~~\| align="center" \|~~
	~~{\| border="1" cellspacing="1" cellpadding="2" align="center" style="width:300px"~~

	~~! QC Recipe:~~
	~~! Manual intensity measurement~~
	\|-
	~~\|Measurement area~~
	~~\|100 mm~~
	\|-
	~~\|Number of measurements~~
	\|5
	\|-
	\|}
	~~\| align="center" valign="top"\|~~
	~~{\| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"~~
	~~!QC limits~~
	~~!Aligner: MA6-1~~
	\|-
	~~\|Nominal intensity~~
	~~\|8 mW/cm<sup>2</sup> @ 365 nm~~
	\|-
	~~\|Intensity deviation from nominal~~
	~~\|≤5%~~
	\|-
	~~\|Intensity non-uniformity~~
	~~\|≤2%~~
	\|-
	\|}
	\|-
	\|}
	~~Power supply and/or lamp will be adjusted if intensity is outside the limit.~~
	\|}
	~~-->~~

Jehem: /* Aligner: MA6-1 */

2026-06-25T13:17:05Z

Aligner: MA6-1

← Older revision		Revision as of 15:17, 25 June 2026
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	\|-		\|-
	! style="text-align:left" \| Location:		! style="text-align:left" \| Location:
	\| style="padding-left: 10px" \| ~~Cleanroom E-4~~		\| style="padding-left: 10px" \| PolyFabLab
	\|}		\|}

Jehem: /* Equipment performance and process related parameters */

2026-06-25T13:10:26Z

Equipment performance and process related parameters

← Older revision		Revision as of 15:10, 25 June 2026
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	\|-		\|-
	! scope=row style="text-align: left;" \| Purpose		! scope=row style="text-align: left;" \| Purpose
	\| ~~Alignment~~ and UV exposure		\| Mask alignment and UV exposure
	\|-		\|-
	! scope=row style="text-align: left;" \| Exposure modes		! scope=row style="text-align: left;" \| Exposure modes

Jehem at 12:44, 25 June 2026

2026-06-25T12:44:21Z

Show changes

Jehem: /* Equipment performance and process related parameters */

2026-06-25T12:29:56Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:29, 25 June 2026
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	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==

	{\|~~border~~="1" ~~cellspacing~~=~~"1" cellpadding="10"~~ style="text-align:left;"		{\| class="wikitable"
			\|-
			! scope=row style="text-align: left;" \| Purpose
	~~!style="background:silver; color:black;" align="center" width="60~~"\|Purpose		\| Alignment and UV exposure
	\|~~style="background:LightGrey; color:black"\|~~
	~~\|style="background:WhiteSmoke; color:black" colspan="2"\|~~
	Alignment and UV exposure
	\|-		\|-
			! scope=row style="text-align: left;" \| Exposure modes
	!style="~~background:silver; color~~:~~black" align="~~left~~" valign="center" rowspan="5"\|Performance~~		\|
			*Vacuum contact
	~~\|style="background:LightGrey~~; ~~color:black~~"\|Exposure ~~mode~~		*Hard contact
	~~\|style="background:WhiteSmoke; color:black" colspan="2"~~\|		*Soft contact
	~~vacuum~~ contact~~, hard~~ contact~~, soft~~ contact~~, proximity, flood~~ exposure		*Proximity
			*Flood exposure
	\|-		\|-
	\| style="~~background~~:~~LightGrey~~; ~~color:black~~"\|Exposure light/filters		! scope=row style="text-align: left;" \| Exposure light/filters
	~~\|style="background:WhiteSmoke; color:black" colspan="2"~~\|		\|
	*365 nm (i-line)		*365 nm (i-line)
	*broadband (i-, g-, h-~~line~~), requires tool change		*broadband (i-, g-, h-lines), requires tool change
	*(303 nm, requires tool change)		*303 nm, requires tool change
	\|-		\|-
	\|style="~~background~~:~~LightGrey~~; ~~color:black~~"\|Minimum ~~structure size~~		! scope=row style="text-align: left;" \| Minimum resolution
	\|~~style="background:WhiteSmoke; color:black" colspan="2"\|~~		\| ~1.25 µm
	~~down to~~ 1.~~25µm~~
	\|-		\|-
	\|style="~~background~~:~~LightGrey~~; ~~color:black~~"\|Mask size		! scope=row style="text-align: left;" \| Mask size
	\|~~style="background:WhiteSmoke; color:black" colspan="2"\|~~		\| 5x5 inches
	*5x5 ~~inch~~
	\|-		\|-
	\|style="~~background~~:~~LightGrey~~; ~~color:black~~"\|Alignment modes		! scope=row style="text-align: left;" \| Alignment modes
	~~\|style="background:WhiteSmoke; color:black" colspan="2"~~\|		\|
	*Top side (TSA)~~, ±2µm~~		*Top side (TSA): ±2 µm
	*~~Backside~~ (BSA)~~, ±5µm~~		*Back side (BSA): ±5 µm
	\|-		\|-
	!style="~~background:silver; color:black"~~ align~~="center" valign="center" rowspan="3"\|Substrates~~		! scope=row style="text-align: left;" \| Substrate size
	~~\|style="background~~:~~LightGrey~~; ~~color:black~~"\|Substrate size		\|
	~~\|style="background:WhiteSmoke; color:black" colspan="2"~~\|		*Mask exposure and alignment: 100 mm wafers
	Mask exposure and alignment:		*Flood exposure: from samples to 150 mm wafers
	* 100 mm wafers
	Flood exposure:
	* samples up to 150 mm wafers
	\|-		\|-
	\| style="~~background~~:~~LightGrey~~; ~~color:black~~"\|Allowed materials		! scope=row style="text-align: left;" \| Allowed materials
	\|~~style="background:WhiteSmoke; color:black" colspan="2"\|~~		\| All PolyFabLab allowed materials
	All PolyFabLab materials
	\|-		\|-
	\|style="~~background~~:~~LightGrey~~; ~~color:black~~"\|~~Batch~~		! scope=row style="text-align: left;" \| Substrate batch
	\|~~style="background:WhiteSmoke; color:black" colspan="2"\|~~		\| 1
	1
	\|-
	\|}		\|}

	<br clear="all" />		<br clear="all" />

Jehem: /* Aligner: MA6-1 */

2026-01-13T11:50:26Z

Aligner: MA6-1

← Older revision		Revision as of 13:50, 13 January 2026
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	==Aligner: MA6-1==		=Aligner: MA6-1=
	[[Image:KSAligner in E-4.jpg\|400px\|thumb\|The Aligner: MA6-1 is located in PolyFabLab.]]		[[Image:KSAligner in E-4.jpg\|400px\|thumb\|The Aligner: MA6-1 is located in PolyFabLab.]]

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	The user manual(s), quality control procedure(s) and results, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager] - '''requires login'''		The user manual(s), quality control procedure(s) and results, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager] - '''requires login'''

	===Exposure dose===		==Exposure dose==
	[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-1\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-1\|Information on UV exposure dose]]

	===Process information===		==Process information==
	The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.		The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.

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	<!--		<!--
	===Quality Control (QC)===		==Quality Control (QC)==
	{\| border="1" cellspacing="2" cellpadding="2" colspan="3"		{\| border="1" cellspacing="2" cellpadding="2" colspan="3"
	\|bgcolor="#98FB98" \|'''Quality Control (QC) for KS Aligner'''		\|bgcolor="#98FB98" \|'''Quality Control (QC) for KS Aligner'''
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	-->		-->

	===Equipment performance and process related parameters===		==Equipment performance and process related parameters==

	{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

Jehem: /* Exposure dose */

2026-01-12T09:54:26Z

Exposure dose

← Older revision		Revision as of 11:54, 12 January 2026
Line 17:		Line 17:

	===Exposure dose===		===Exposure dose===
	[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-1\|Information on UV exposure dose]]

	===Process information===		===Process information===

Jehem: /* Exposure dose */

2026-01-12T09:52:54Z

Exposure dose

← Older revision		Revision as of 11:52, 12 January 2026
Line 17:		Line 17:

	===Exposure dose===		===Exposure dose===
	[[Specific Process Knowledge/Lithography/Resist~~#Aligner: MA6-1~~\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners\|Information on UV exposure dose]]

	===Process information===		===Process information===

Jehem: Created page with "==Aligner: MA6-1== The Aligner: MA6-1 is located in PolyFabLab. SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alig..."

2026-01-12T09:13:32Z

Created page with "==Aligner: MA6-1== 400px|thumb|The Aligner: MA6-1 is located in PolyFabLab. SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alig..."

New page

==Aligner: MA6-1==
[[Image:KSAligner in E-4.jpg|400px|thumb|The Aligner: MA6-1 is located in PolyFabLab.]]

SUSS Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

'''Training videos:'''
 The training videos were made for MA6-2, but operation of MA6-1 is very similar as they are exactly the same model. Due to a different power supply, however, procedures for ignition and intensity control of the lamp is different for MA6-1. Please refer to the manual for the correct procedures.

[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]

[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]

The user manual(s), quality control procedure(s) and results, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager] - '''requires login'''

===Exposure dose===
[[Specific Process Knowledge/Lithography/Resist#Aligner: MA6-1|Information on UV exposure dose]]

===Process information===
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].



===Equipment performance and process related parameters===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
*365 nm (i-line)
*broadband (i-, g-, h-line), requires tool change
*(303 nm, requires tool change)
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1.25µm
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA), ±2µm
*Backside (BSA), ±5µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
Mask exposure and alignment:
* 100 mm wafers
Flood exposure:
* samples up to 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All PolyFabLab materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}