Specific Process Knowledge/Lithography/TIspray - Revision history

Jehem at 11:26, 20 April 2026

2026-04-20T11:26:40Z

← Older revision		Revision as of 13:26, 20 April 2026
Line 1:		Line 1:
	{{~~:Specific Process Knowledge/Lithography/authors_generic~~}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/5214E click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/5214E click here]'''

Taran at 13:15, 25 August 2025

2025-08-25T13:15:26Z

← Older revision		Revision as of 15:15, 25 August 2025
Line 4:		Line 4:

	[[Category: Lithography\|Resist]]		[[Category: Lithography\|Resist]]
	[[Category: Resist\|~~AZ 5214E~~]]		[[Category: Resist\|TI Spray]]

	__TOC__		__TOC__

Jehem: /* Image reversal */

2023-04-05T13:35:02Z

Image reversal

← Older revision		Revision as of 15:35, 5 April 2023
Line 20:		Line 20:
	'''Typical image reversal parameters:'''		'''Typical image reversal parameters:'''
	*Reversal bake temperature: 110°C		*Reversal bake temperature: 110°C
	*Reversal bake time: 60-120 s		*Reversal bake time: 60 - 120 s
	*Flood exposure: 200-500 mJ/cm<sup>2</sup>		*Flood exposure: 200 - 500 mJ/cm<sup>2</sup>


	If TI Spray is baked after exposure, the exposed resist will cross-link, making it insoluble in the developer. This is called the "Reversal bake". The reversal bake activates cross-linking of the exposed areas, which "reverses" the polarity of the design.		If TI Spray is baked after exposure, the exposed resist will cross-link, making it insoluble in the developer. This is called the "Reversal bake". The reversal bake activates cross-linking of the exposed areas, which "reverses" the polarity of the design. When the substrate is flood-exposed after the reversal bake, the previously unexposed areas become soluble, and will be removed in the subsequent development. The reversal procedure effectively makes TI Spray a negative resist.

	If the substrate is flood exposed after the reversal bake, the previously unexposed areas become soluble, and will be removed in the subsequent development. The reversal procedure effectively makes TI Spray a negative resist.

	The image reversal process greatly increases the sensitivity of TI Spray, and the dose of the image exposure is a critical parameter, especially if negative angled resist sidewalls are desired.<br>		The image reversal process greatly increases the sensitivity of TI Spray, and the dose of the image exposure is a critical parameter, especially if negative angled resist sidewalls are desired.<br>
	Half dose of the normal, positive process is a good starting point for optimization. Similarly, the reversal bake is also a critical step, and must be tightly controlled in order to achieve consistent results. If negative sidewalls are desired, 60-~~120s~~ at 110°C is recommended (as well as a resist thickness above 2 µm), but if straight sidewalls are desired, 60-~~120s~~ at 120°C can be used.		Half dose of the normal, positive process is a good starting point for optimization. Similarly, the reversal bake is also a critical step, and must be tightly controlled in order to achieve consistent results. If negative sidewalls are desired, 60 - 120 s at 110°C is recommended (as well as a resist thickness above 2 µm), but if straight sidewalls are desired, 60 - 120 s at 120°C can be used.

	The flood exposure, on the other hand, is uncritical, and 2-5 times the normal positive process dose is generally used.		The flood exposure, on the other hand, is uncritical, and 2-5 times the normal positive process dose is generally used.

Jehem: Created page with "{{:Specific Process Knowledge/Lithography/authors_generic}} '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/5214E click here]''' Resist AZ 5214E TOC =Resist Description= TI Spray is specifically designed to be used for spray coating, and is a positive UV photoresist with image revers..."

2023-01-31T10:17:37Z

Created page with "{{:Specific Process Knowledge/Lithography/authors_generic}} '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/5214E click here]''' Resist AZ 5214E __TOC__ =Resist Description= TI Spray is specifically designed to be used for spray coating, and is a positive UV photoresist with image revers..."

New page

{{:Specific Process Knowledge/Lithography/authors_generic}}

'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/5214E click here]'''

[[Category: Lithography|Resist]]
[[Category: Resist|AZ 5214E]]

__TOC__

=Resist Description=
TI Spray is specifically designed to be used for spray coating, and is a positive UV photoresist with image reversal capability. It is considered to have good adhesion when wet etching.

=Spray Coating=

=Soft Baking=

=Exposure=

=Image reversal=
'''Typical image reversal parameters:'''
*Reversal bake temperature: 110°C
*Reversal bake time: 60-120 s
*Flood exposure: 200-500 mJ/cm<sup>2</sup>

If TI Spray is baked after exposure, the exposed resist will cross-link, making it insoluble in the developer. This is called the "Reversal bake". The reversal bake activates cross-linking of the exposed areas, which "reverses" the polarity of the design.

If the substrate is flood exposed after the reversal bake, the previously unexposed areas become soluble, and will be removed in the subsequent development. The reversal procedure effectively makes TI Spray a negative resist.

The image reversal process greatly increases the sensitivity of TI Spray, and the dose of the image exposure is a critical parameter, especially if negative angled resist sidewalls are desired.<br>
Half dose of the normal, positive process is a good starting point for optimization. Similarly, the reversal bake is also a critical step, and must be tightly controlled in order to achieve consistent results. If negative sidewalls are desired, 60-120s at 110°C is recommended (as well as a resist thickness above 2 µm), but if straight sidewalls are desired, 60-120s at 120°C can be used.

The flood exposure, on the other hand, is uncritical, and 2-5 times the normal positive process dose is generally used.

=Development=
'''Development speed:'''
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min