Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseNaOH - Revision history

Jehem at 11:27, 20 April 2026

2026-04-20T11:27:36Z

← Older revision		Revision as of 13:27, 20 April 2026
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			{{cc-nanolab}}

	=Exposure dose when using AZ 351B as developer=		=Exposure dose when using AZ 351B as developer=
	The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.		The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.

Jehem at 09:49, 12 January 2026

2026-01-12T09:49:17Z

← Older revision		Revision as of 11:49, 12 January 2026
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	==Exposure dose ~~for mask aligners=~~=		=Exposure dose when using AZ 351B as developer=
	The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.		The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.

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	===Aligner: MA6-1===		==Aligner: MA6-1==
	The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.		The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.

Jehem at 09:46, 12 January 2026

2026-01-12T09:46:36Z

← Older revision		Revision as of 11:46, 12 January 2026
Line 1:		Line 1:
			==Exposure dose for mask aligners==
	The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.		The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.

Jehem: Created page with "The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5. ===Aligner: MA6-1=== The Aligner: MA6-1 has an i-line..."

2026-01-12T09:45:42Z

Created page with "The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5. ===Aligner: MA6-1=== The Aligner: MA6-1 has an i-line..."

New page

The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.

All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5.

===Aligner: MA6-1===
The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.

'''Quality control''' 
Please note that the values listed in the table are '''not''' routinely tested as part of quality control.

{| class="wikitable"
|-
! !! Date !! Operator !! Film thickness !! Exposure mode !! Dose !! Resolution !! Comments
|-
! scope=row| AZ 5214E
| Long ago || ? || 1.5 µm || ? || 70 mJ/cm2 || ? µm || '''Not under regular quality control''' Development: 60 s submersion
|-
! scope=row| AZ 5214E
| Long ago || ? || 2.2 µm || ? || 72 mJ/cm2 || ? µm || '''Not under regular quality control''' Development: 70 s submersion
|-
! scope=row| AZ 5214E
| Long ago || ? || 4.2 µm || ? || 160 mJ/cm2 || ? µm || '''Not under regular quality control''' Development: 180 s submersion
|-
! scope=row| AZ 5214E Image reversal
| Long ago || ? || 1.5 µm || ? || 30 mJ/cm2 || ? µm || '''Not under regular quality control''' Reversal bake: 100 s @ 110°C Flood exposure: 210 mJ/cm2 Development: 60 s submersion
|-
! scope=row| AZ 5214E Image reversal
| Long ago || ? || 2.2 µm || ? || 35 mJ/cm2 || ? µm || '''Not under regular quality control''' Reversal bake: 100 s @ 110°C Flood exposure: 210 mJ/cm2 Development: 70 s submersion
|-
! scope=row| AZ 4562
| Long ago || ? || 10 µm || ? || 320 mJ/cm2 || ? µm || '''Not under regular quality control''' Priming: HMDS Rehydration after SB: none Exposure: Multiple exposures with 15 s pauses is recommended Degassing after exposure: none Development: 300 s submersion
|}

'''New resists version in 2023''' 
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. This table contains only information about the old resist versions.