Specific Process Knowledge/Lithography/Resist/Ebeamresist - Revision history

Elelop: /* Non-Standard E-beam resists */

2026-02-04T14:24:35Z

Non-Standard E-beam resists

← Older revision		Revision as of 16:24, 4 February 2026
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	\|'''~~[[Specific_Process_Knowledge/Lithography/mrEBL6000\|~~mr EBL 6000.1]]'''		\|'''mr EBL 6000.1'''
	\|Negative		\|Negative
	\|[http://http://www.microresist.de/home_en.htm MicroResist]		\|[http://http://www.microresist.de/home_en.htm MicroResist]

Elelop at 14:06, 4 February 2026

2026-02-04T14:06:23Z

← Older revision		Revision as of 16:06, 4 February 2026
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	\|[[media:Process Flow HSQ.docx\|process flow HSQ]]		\|[[media:Process Flow HSQ.docx\|process flow HSQ]]
	~~[[Specific Process Knowledge/Lithography/EBeamLithography/High resolution patterning with HSQ\|High resolution patterning with HSQ]]~~

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Thope: /* Standard E-beam resists and process guidelines */

2025-08-08T08:08:36Z

Standard E-beam resists and process guidelines

← Older revision		Revision as of 10:08, 8 August 2025
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	*AR-600-71		*AR-600-71
	*Remover 1165		*Remover 1165
	\|~~[[media:Process_Flow_CSAR.docx‎\|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx\|Process Flow CSAR with ESPACER]]~~ <br> [[media:Process Flow CSAR with Al.docx\|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx\|Process Flow LOR5A with CSAR]] <br>		\|<br> [[media:Process Flow CSAR with Al.docx\|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx\|Process Flow LOR5A with CSAR]] <br>

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Mmat: /* Non-Standard E-beam resists */

2025-07-21T08:17:48Z

Non-Standard E-beam resists

← Older revision		Revision as of 10:17, 21 July 2025
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	\|[[media:Process Flow HSQ.docx\|process flow HSQ]]		\|[[media:Process Flow HSQ.docx\|process flow HSQ]]
	[[/High resolution patterning with HSQ\|High resolution patterning with HSQ]]		[[Specific Process Knowledge/Lithography/EBeamLithography/High resolution patterning with HSQ\|High resolution patterning with HSQ]]

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Thope: /* Standard E-beam resists and process guidelines */

2023-02-17T09:17:17Z

Standard E-beam resists and process guidelines

← Older revision		Revision as of 11:17, 17 February 2023
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	== Standard E-beam resists and process guidelines ==		== Standard E-beam resists and process guidelines ==

	DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for ~~easy~~ spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.		DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.

Jehem: /* Non-Standard E-beam resists */

2023-02-03T10:07:06Z

Non-Standard E-beam resists

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Jehem: /* Standard E-beam resists and process guidelines */

2023-02-03T10:06:57Z

Standard E-beam resists and process guidelines

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Jehem: /* Standard E-beam resists and process guidelines */

2023-02-03T10:06:48Z

Standard E-beam resists and process guidelines

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Jehem: Created page with "== Standard E-beam resists and process guidelines == DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for easy spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4. {|borde..."

2023-01-26T14:12:00Z

Created page with "== Standard E-beam resists and process guidelines == DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for easy spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4. {|borde..."

New page

== Standard E-beam resists and process guidelines ==

DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for easy spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.

{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-

|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''

|-

|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR AR-P 6200]]'''
|Positive
|[http://www.allresist.com AllResist]
|Standard positive resist, very similar to ZEP520.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-P6200_CSAR62english_Allresist_product-information.pdf AR-P 6200 info]
|Gamma E-beam & UV or Labspin 2/3
|Anisole
|
*AR-600-546
*AR-600-548
*N50
*MIBK:IPA
|IPA
|
*AR-600-71
*Remover 1165
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] 

|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARN8200|Medusa AR-N 8200]]'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam and DUV sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/SXAR-N8200-1_english_Allresist_product_information.pdf AR-N 8200 info]
|Labspin 2/3
|AR 600-07
|AR 300-47:DIW (1:1)
|DIW
|BOE
|

|-
|-style="background:LightGrey; color:black"
|'''AR-N 7500'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-N7500_english_Allresist_product-information.pdf AR-N 7500 info]
|Labspin 2/3
|PGMEA
|
*AR 300-47:DIW (4:1)
*MIF726:DIW (8:5)
|DIW
|
*AR 300-73
*O2 plasma
|

|}

 

== Non-Standard E-beam resists ==

It is possible to obtain permission to user other resists at DTU Nanolab, users must however provide these resists and possibly developers themselves. A non-exhaustive list of user supplied EBL resist used at DTU Nanolab and some process guidelines can be found in the table below.

{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-

|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''

|-

|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ZEP520A|ZEP520A]]'''
|Positive resist, contact [mailto:Lithography@Nanolab.dtu.dk Lithography] if you plan to use this resist
|ZEON
|Positive resist
|[[media:ZEP520A.pdf|ZEP520A.pdf]], [[media:ZEP520A.xls|ZEP520A spin curves on SSE Spinner]]
|See table [[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] 
|Anisole
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf‎|JJAP-51-06FC05.pdf‎]], [[media:JVB001037.pdf‎|JVB001037.pdf‎]]
|IPA
|acetone/1165
|[[media:Process_Flow_ZEP.docx|Process_Flow_ZEP.docx]]

|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARP617|Copolymer AR-P 617]]'''
|Positive
|[http://www.allresist.com AllResist]
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:AR_P617.pdf‎|AR_P617.pdf‎]]
|See table [[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] 
|PGME
|AR 600-55, MIBK:IPA
|
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]

|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
|Negative
|[http://http://www.microresist.de/home_en.htm MicroResist]
|Standard negative resist
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines.pdf‎]]
|See table [[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] 
|Anisole
|mr DEV
|IPA
|mr REM
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]

|-
|-style="background:WhiteSmoke; color:black"
|'''HSQ (XR-1541)'''
|Negative
|DOW Corning
|Approved. Standard negative resist
|[[media:DowCorningHSQA.pdf|HSQ Dow Corning]], [[media:MSDS HSQ.pdf|MSDS HSQ]]
|See table [[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] 
|
|TMAH, AZ400K:H2O
|H2O
|
|[[media:Process Flow HSQ.docx|process flow HSQ]]
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]]

|-
|-style="background:LightGrey; color:black"
|'''AR-N 7520'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information.
|[[media:AR-N7500-7520.pdf‎|AR-N7500-7520.pdf‎]]
|See table [[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] 
|PGMEA
|AR 300-47, TMAH
|H2O
|
|

|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/PMMA|PMMA]]'''
|Positive
| [http://www.allresist.com AllResist]
|We have various types of PMMA in the cleanroom. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|
|See table [[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] 
|Anisole
|MIBK:IPA (1:3), IPA:H2O
|IPA
|acetone/1165/Pirahna
|

|-
|-style="background:LightGrey; color:black"
|'''ZEP7000'''
|Positive
|ZEON
|Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:ZEP7000.pdf|ZEP7000.pdf]]
|See table [[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] 
|Anisole
|ZED-500/Hexyl Acetate,n-amyl acetate, oxylene.
|IPA
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]

|}