Specific Process Knowledge/Lithography/Pretreatment - Revision history

Taran: /* Comparing pretreatment methods */

2025-04-22T14:01:43Z

Comparing pretreatment methods

← Older revision		Revision as of 16:01, 22 April 2025
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Restrictions		!Restrictions
	\|~~Type~~ IV and resist/polymer on ~~polymer~~ substrate		\|Low Tg polymer substrates, type IV films, and resist/polymer on substrate

	i.e. no resist coated wafers or ~~crystalbonded~~ chips!		i.e. no resist coated wafers or Crystalbonded chips!
	\|Wafers with metal is not allowed		\|Wafers with metal is not allowed
	\|Resist is not allowed		\|Resist is not allowed

2025-03-17T13:45:08Z

Buffered HF-Clean

← Older revision		Revision as of 15:45, 17 March 2025
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	=Buffered HF-Clean=		=Buffered HF-Clean=
	[[image:BHF clean.JPG\|~~300x300px~~\|thumb\|\|BHF clean wetbench 04 in D-3.]]		[[image:BHF clean.JPG\|400px\|thumb\|\|BHF clean wetbench 04 in D-3.]]

	Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip.		Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip.

2025-03-17T13:45:00Z

Spin Coater: Gamma e-beam & UV

← Older revision		Revision as of 15:45, 17 March 2025
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	==Spin Coater: Gamma e-beam & UV==		==Spin Coater: Gamma e-beam & UV==

	[[image:Gamma_4M_-_E-beam_&_UV_full.JPG\|~~300x300px~~\|thumb\|Spin Coater: Gamma e-beam & UV in E-5.]]		[[image:Gamma_4M_-_E-beam_&_UV_full.JPG\|400px\|thumb\|Spin Coater: Gamma e-beam & UV in E-5.]]

	The user manual, user APV, and contact information can be found in LabManager:		The user manual, user APV, and contact information can be found in LabManager:

2025-03-17T13:44:53Z

Spin Coater: Gamma UV

← Older revision		Revision as of 15:44, 17 March 2025
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	==Spin Coater: Gamma UV==		==Spin Coater: Gamma UV==
	[[Image:HMDS gammaUV.jpg\|~~300x300px~~\|thumb\|HMDS module (top) in Spin Coater: Gamma UV in E-5.]]		[[Image:HMDS gammaUV.jpg\|400px\|thumb\|HMDS module (top) in Spin Coater: Gamma UV in E-5.]]

	The user manual, user APV, and contact information can be found in LabManager:		The user manual, user APV, and contact information can be found in LabManager:

2025-03-17T13:44:46Z

Oven: HMDS 2

← Older revision		Revision as of 15:44, 17 March 2025
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	==Oven: HMDS 2==		==Oven: HMDS 2==
	[[Image:HMDS2.jpg\|~~300x300px~~\|thumb\|The Oven: HMDS 2 oven is located in E-5.]]		[[Image:HMDS2.jpg\|400px\|thumb\|The Oven: HMDS 2 oven is located in E-5.]]

	The user manual, user APV, and contact information can be found in LabManager:		The user manual, user APV, and contact information can be found in LabManager:

2025-03-17T13:44:24Z

HMDS

← Older revision		Revision as of 15:44, 17 March 2025
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	The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>.		The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>.

	[[File:HMDS priming schematic.png\|~~640px~~\|thumb\|right\|Schematic of the HMDS vapor priming process]]		[[File:HMDS priming schematic.png\|400px\|thumb\|right\|Schematic of the HMDS vapor priming process]]

	<br clear="all" />		<br clear="all" />

2024-03-19T10:06:28Z

HMDS

← Older revision		Revision as of 12:06, 19 March 2024
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	=HMDS=		=HMDS=
	The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface ~~tension~~.		The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface energy to promote better wetting.

	The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>.		The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>.

2023-12-12T11:00:12Z

Spin Coater: Gamma UV

← Older revision		Revision as of 13:00, 12 December 2023
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	==Spin Coater: Gamma UV==		==Spin Coater: Gamma UV==
	[[Image:HMDS gammaUV.jpg\|300x300px\|thumb\|HMDS module in Spin Coater: Gamma UV in E-5.]]		[[Image:HMDS gammaUV.jpg\|300x300px\|thumb\|HMDS module (top) in Spin Coater: Gamma UV in E-5.]]

	The user manual, user APV, and contact information can be found in LabManager:		The user manual, user APV, and contact information can be found in LabManager:

2023-05-10T12:45:33Z

← Older revision		Revision as of 14:45, 10 May 2023
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	{{~~:Specific Process Knowledge/Lithography/authors_generic~~}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]'''

2023-02-08T15:53:31Z

Comparing HMDS priming

← Older revision		Revision as of 17:53, 8 February 2023
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|

	1 min / wafer		1-2 min / wafer
	\|-		\|-