Specific Process Knowledge/Lithography/Mix-and-match - Revision history

Thope at 07:32, 24 February 2026

2026-02-24T07:32:18Z

← Older revision		Revision as of 09:32, 24 February 2026
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/Mix-and-match click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/Mix-and-match click here]'''

	Content and illustration by ~~Thomas Pedersen,~~ DTU Nanolab unless otherwise noted.		Content and illustration by DTU Nanolab unless otherwise noted.

	Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.		Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.

Thope: /* Alignment accuracy */

2023-12-04T10:49:38Z

Alignment accuracy

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Thope: /* Methods */

2023-12-04T10:43:51Z

Methods

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	==Alignment accuracy==		==Alignment accuracy==
	Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y.		Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y.

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			Left and center: Vernier scales for measurement of alignment accuracy. Right: Waveguide where the left side is written by UV and the right side by E-beam.
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	=Mix-and-match resists=		=Mix-and-match resists=

Thope: /* Methods */

2023-12-04T10:33:06Z

Methods

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	The two different methods for pattern alignment.		The two different methods for pattern alignment.
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			==Alignment accuracy==
			Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y.

	=Mix-and-match resists=		=Mix-and-match resists=

Thope at 07:01, 14 November 2023

2023-11-14T07:01:31Z

← Older revision		Revision as of 09:01, 14 November 2023
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			'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/Mix-and-match click here]'''

			Content and illustration by Thomas Pedersen, DTU Nanolab unless otherwise noted.

	Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.		Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.

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	The two different methods for pattern alignment~~. Image: Thomas Pedersen~~.		The two different methods for pattern alignment.
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	250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500~~. Image: Thomas Pedersen~~.		250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500.
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	100 nm lines in 1500 nm thick nLOF2020~~. Image: Thomas Pedersen~~.		100 nm lines in 1500 nm thick nLOF2020.
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Thope: /* Example images (250 nm) */

2023-10-19T07:12:36Z

Example images (250 nm)

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	\| [[image:nLOF_250nm_1.png\|300px]] \|\| [[image:~~nLOF_250nm_2~~.png\|300px]] \|\| [[image:~~nLOF_250nm_3~~.png\|300px]] \|\| [[image:nLOF_250nm_4.png\|300px]]		\| [[image:nLOF_250nm_1.png\|300px]] \|\| [[image:nLOF_250nm_3.png\|300px]] \|\| [[image:nLOF_250nm_2.png\|300px]] \|\| [[image:nLOF_250nm_4.png\|300px]]
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Thope: /* Example images (250 nm) */

2023-10-19T07:12:17Z

Example images (250 nm)

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	\| [[image:~~nLOF_250_1~~.png\|300px]] \|\| [[image:~~nLOF_250_2~~.png\|300px]] \|\| [[image:~~nLOF_250_3~~.png\|300px]] \|\| [[image:~~nLOF_250_4~~.png\|300px]]		\| [[image:nLOF_250nm_1.png\|300px]] \|\| [[image:nLOF_250nm_2.png\|300px]] \|\| [[image:nLOF_250nm_3.png\|300px]] \|\| [[image:nLOF_250nm_4.png\|300px]]
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Thope: /* Example images (250 nm) */

2023-10-19T07:11:33Z

Example images (250 nm)

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	\| [[image:~~IMAGE74_540~~.png\|300px]] \|\| [[image:~~IMAGE825_540~~.png\|300px]] \|\| [[image:~~IMAGE768_540~~.png\|300px]] \|\| [[image:~~IMAGE847_540~~.png\|300px]]		\| [[image:nLOF_250_1.png\|300px]] \|\| [[image:nLOF_250_2.png\|300px]] \|\| [[image:nLOF_250_3.png\|300px]] \|\| [[image:nLOF_250_4.png\|300px]]
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	Example images from left to right: 100 nm lines ~~(4 µm FOV)~~, 150 nm lines ~~(4 µm FOV)~~, 100 nm vernier scale lines ~~(25 µm FOV)~~, cartoon figures ~~(25 µm FOV)~~. Image: Thomas Pedersen.		Example images from left to right: 100 nm lines, 150 nm lines, 100 nm vernier scale lines, cartoon figures. Image: Thomas Pedersen.
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Thope: /* Example images (250 nm) */

2023-10-19T07:04:16Z

Example images (250 nm)

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	===Example images (1500 nm)		===Example images (1500 nm)===
	Undiluted nLOF2020 can also be used, in this case a 1500 nm thick resist is exposed at 160 µC/cm<sup>2</sup>. While it is possible to define lines down to about 100 nm the high aspect ratio will cause free standing lines to collapse as illustrated below.		Undiluted nLOF2020 can also be used, in this case a 1500 nm thick resist is exposed at 160 µC/cm<sup>2</sup>. While it is possible to define lines down to about 100 nm the high aspect ratio will cause free standing lines to collapse as illustrated below.

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	. Image: Thomas Pedersen.		100 nm lines in 1500 nm thick nLOF2020. Image: Thomas Pedersen.
	\|}		\|}

Thope: /* Example images (250 nm) */

2023-10-19T07:03:38Z

Example images (250 nm)

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 | colspan="4" style="text-align: center;|
 Example images from left to right: 100 nm lines (4 µm FOV), 150 nm lines (4 µm FOV), 100 nm vernier scale lines (25 µm FOV), cartoon figures (25 µm FOV). Image: Thomas Pedersen.
 |}