Specific Process Knowledge/Lithography/MiR - Revision history

Taran: /* Exposure */

2026-05-05T12:39:52Z

Exposure

← Older revision		Revision as of 14:39, 5 May 2026
Line 21:		Line 21:
	==Exposure==		==Exposure==
	'''Dehydration of resist film:'''<br>		'''Dehydration of resist film:'''<br>
	During exposure in the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1 minute before starting the exposure, or simply by parking the writehead away from the exposure location for 1 minute before starting the exposure.		During exposure in the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1 minute before starting the exposure, or simply by parking the writehead away from the exposure location for 1 minute before starting the exposure. Dehydration can also mess up a dose test, but this can be fixed by increasing the spacing between the individual doses, or even better by extending the test design to 40mm or more in the Y-direction (adding a very small structure in the design file, or increasing the upper boarder during conversion).

	The effect can also be reduced by increasing the soft bake.		The effect can also be reduced by increasing the soft bake.

Jehem at 11:25, 20 April 2026

2026-04-20T11:25:57Z

← Older revision		Revision as of 13:25, 20 April 2026
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	{{~~:Specific Process Knowledge/Lithography/authors_generic~~}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]'''

Jehem: /* Post-exposure bake */

2026-02-24T10:29:42Z

Post-exposure bake

← Older revision		Revision as of 12:29, 24 February 2026
Line 34:		Line 34:

	Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB.		Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB.

			<gallery style="text-align: center;" widths=450 heights=350>
			MIR_noPEB.jpg\|1.5 µm AZ MIR 701 without PEB
			MIR_withPEB.jpg\|1.5 µm AZ MIR 701 with PEB
			</gallery>

	==Development==		==Development==
	'''Development speed:'''		'''Development speed:'''
	*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min		*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min

Taran at 13:09, 25 August 2025

2025-08-25T13:09:06Z

← Older revision		Revision as of 15:09, 25 August 2025
Line 31:		Line 31:


	During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be ~~removed~~ by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into ~~unactivated~~ regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1 - 2 µm film). Thicker coatings may require longer bake, and substrate thickness and material may also affect the required baking time.		During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be reduced by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into un-activated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1 - 2 µm film). Thicker coatings may require longer bake, and substrate thickness and material may also affect the required baking time.

	Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB.		Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB.

Jehem: /* Post-exposure bake */

2023-04-05T13:27:30Z

Post-exposure bake

← Older revision		Revision as of 15:27, 5 April 2023
Line 31:		Line 31:


	During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1-~~2µm~~ film). Thicker coatings may require longer bake, and substrate thickness and material~~, e.g glass,~~ may also affect the required baking time.		During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1 - 2 µm film). Thicker coatings may require longer bake, and substrate thickness and material may also affect the required baking time.

	Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.~~5µm~~ thick MiR resist film will be approximately 1.~~4µm~~ after PEB.		Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB.

	==Development==		==Development==
	'''Development speed:'''		'''Development speed:'''
	*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min		*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min

Jehem at 10:12, 31 January 2023

2023-01-31T10:12:17Z

← Older revision		Revision as of 12:12, 31 January 2023
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			{{:Specific Process Knowledge/Lithography/authors_generic}}

			'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]'''

			[[Category: Lithography\|Resist]]
			[[Category: Resist\|AZ MiR 701]]

	__TOC__		__TOC__

Jehem: /* Post-exposure bake */

2023-01-30T14:09:10Z

Post-exposure bake

← Older revision		Revision as of 16:09, 30 January 2023
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	*PEB temperature: 110°C		*PEB temperature: 110°C
	*PEB time: 60 s		*PEB time: 60 s


	During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1-2µm film). Thicker coatings may require longer bake, and substrate thickness and material, e.g glass, may also affect the required baking time.		During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1-2µm film). Thicker coatings may require longer bake, and substrate thickness and material, e.g glass, may also affect the required baking time.

Jehem at 14:02, 30 January 2023

2023-01-30T14:02:41Z

← Older revision		Revision as of 16:02, 30 January 2023
Line 1:		Line 1:
	'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]'''		__TOC__

	AZ MiR 701 is a positive UV photoresist.		==Resist description==
			AZ MiR 701 is a positive UV photoresist. It is considered to have high selectivity for dry etching.

	==Spin coating==		==Spin coating==
			[[Image:MiRspincurves.JPG\|640px\|thumb\|Spin curves for AZ MiR 701 (29 cps) using a 30 s spin-off, and a 60 s @ 90°C proximity softbake]]

	~~[[Image~~:~~MiRspincurves.JPG\|500x500px\|thumb\|~~Spin ~~curves for AZ MiR 701 (29cps) using a 30s spin~~-~~off, and a 60s~~@90°C ~~softbake (~~proximity ~~bake for Gamma)]]~~		'''Typical spin parameters:'''
			*Spin off: 30-60 s
			*Soft bake: 60 s @ 90°C in proximity
	<br clear="all" />		<br clear="all" />

	==Exposure==		==Exposure==
			'''Dehydration of resist film:'''<br>
			During exposure in the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1 minute before starting the exposure, or simply by parking the writehead away from the exposure location for 1 minute before starting the exposure.

	During exposure using the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1-2 minutes before starting the exposure. The effect can also be reduced by increasing the soft bake.		The effect can also be reduced by increasing the soft bake.

	==Post-exposure bake==		==Post-exposure bake==
			'''Typical PEB parameters:'''
			*PEB temperature: 110°C
			*PEB time: 60 s

	During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into ~~un-activated~~ regions, thus smoothing the sidewall. The recommended PEB for MiR is ~~60s~~ at 110°C (1-2µm film). Thicker coatings may require longer bake, and substrate thickness and material, e.g glass, may also affect the required baking time.		During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1-2µm film). Thicker coatings may require longer bake, and substrate thickness and material, e.g glass, may also affect the required baking time.

	As the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5µm thick MiR resist film will be approximately 1.4µm after PEB.		Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5µm thick MiR resist film will be approximately 1.4µm after PEB.

	==Development==		==Development==
			'''Development speed:'''
	~~A 1~~.~~5-2µm MiR resist film is fully developed in 60s using~~ TMAH (AZ 726)~~. Depending on the exposure dose, thicker coatings may develop in 1 min, but it is probably better to aim for a similar development speed (2µm~~/min).		*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min

Taran: /* Exposure */

2022-09-09T09:24:10Z

Exposure

← Older revision		Revision as of 11:24, 9 September 2022
Line 11:		Line 11:
	==Exposure==		==Exposure==

	During exposure using the maskless aligners MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1-2 minutes before starting the exposure. The effect can also be reduced by increasing the soft bake.		During exposure using the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1-2 minutes before starting the exposure. The effect can also be reduced by increasing the soft bake.

	==Post-exposure bake==		==Post-exposure bake==

Taran at 09:23, 9 September 2022

2022-09-09T09:23:48Z

← Older revision		Revision as of 11:23, 9 September 2022
Line 8:		Line 8:

	<br clear="all" />		<br clear="all" />

			==Exposure==

			During exposure using the maskless aligners MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1-2 minutes before starting the exposure. The effect can also be reduced by increasing the soft bake.

	==Post-exposure bake==		==Post-exposure bake==