Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation - Revision history

Mmat: /* The PEC node in Beamer */

2025-09-17T12:07:33Z

The PEC node in Beamer

← Older revision		Revision as of 14:07, 17 September 2025
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	*Use a nummerical PSF		*Use a nummerical PSF

	The pre-computed PSF can be loaded from either a separate file, from the local archive or from the global archive. In any case the file will probably originate from a Tracer simulation~~, for more on this visit our [[Specific_Process_Knowledge/Lithography/EBeamLithography/TRACER\|Tracer page~~.]] It can be advantageus to place your PSF in the global (network) archive such that it is available on the Beamer PC in the cleanroom as well as the Beamer PC outside the cleanroom.		The pre-computed PSF can be loaded from either a separate file, from the local archive or from the global archive. In any case the file will probably originate from a Tracer simulation. It can be advantageus to place your PSF in the global (network) archive such that it is available on the Beamer PC in the cleanroom as well as the Beamer PC outside the cleanroom.

	A guassian approximation is mostly useful if trying to replicate a result from litterature or if one has worked deliberately towards determining the gaussian constants for a particular process.		A guassian approximation is mostly useful if trying to replicate a result from litterature or if one has worked deliberately towards determining the gaussian constants for a particular process.

Thope: /* Pattern preparation for exposure on JEOL 9500 */

2023-11-23T12:45:11Z

Pattern preparation for exposure on JEOL 9500

← Older revision		Revision as of 14:45, 23 November 2023
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	Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER\|Beamer guide.]]		Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER\|Beamer guide.]]

	Please observe that ~~for wafer exposure on JEOL 9500, the wafer is~~ clamped such that it is not possible to expose the rim of the wafer. The patternable diameter for wafers are:		Please observe that wafers are clamped in such a way that it is not possible to expose the rim of the wafer. The patternable diameter for wafers are as listed below. Writing a pattern outside this area does not damage the tool but it is a waste of time.
	*2": 44 mm		*2": 44 mm
	*4": 93 mm		*4": 93 mm

Thope: /* Pattern preparation for exposure on JEOL 9500 */

2023-11-23T12:42:27Z

Pattern preparation for exposure on JEOL 9500

← Older revision		Revision as of 14:42, 23 November 2023
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	Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER\|Beamer guide.]]		Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER\|Beamer guide.]]

			Please observe that for wafer exposure on JEOL 9500, the wafer is clamped such that it is not possible to expose the rim of the wafer. The patternable diameter for wafers are:
			*2": 44 mm
			*4": 93 mm
			*6": 138 mm

	<br>		<br>

Thope at 06:52, 14 November 2023

2023-11-14T06:52:25Z

← Older revision		Revision as of 08:52, 14 November 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography click here]'''

	Content and illustration by Thomas Pedersen @ DTU Nanolab unless otherwise noted.		Content and illustration by Thomas Pedersen, DTU Nanolab unless otherwise noted.

	=Pattern preparation for exposure on JEOL 9500 =		=Pattern preparation for exposure on JEOL 9500 =

Thope: /* Bulk and sleeve separation - double current exposure */

2023-10-19T15:14:30Z

Bulk and sleeve separation - double current exposure

← Older revision		Revision as of 17:14, 19 October 2023
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	== Bulk and sleeve separation - double current exposure ==		== Bulk and sleeve separation - double current exposure ==
	Patterns that contain a mix of fine and large dimension structures can advantageously be broken into a low current and a high current exposure. In this way the fine features can be written at low current (and low speed) and the large structures can be written at high current (and high speed). Some patterns, for instance a fine electrode pattern with large bonding pads, can easily and manually be broken into a fine and coarse part and placed in two different layers. For many patterns this can however be very cumbersome but the process can also be automated with Beamer using "bulk and sleeve" setup. The concept is illustrated below. In this setup, Beamer will extract the periphery (sleeve) of a pattern into one layer and the bulk of structures into another layer. The bulk is oversized slightly (adding a bias) to ensure overlap between the two patterns at exposure. In this way structures can be defined with best possible edge definition while keeping exposure time down. [https://labmanager.dtu.dk/view_binary.php?fileId=5412 A Beamer flow with a default bulk and sleeve setup can be found here.] A ~~200~~ nm sleeve with a 50 nm overlap is a good starting point.		Patterns that contain a mix of fine and large dimension structures can advantageously be broken into a low current and a high current exposure. In this way the fine features can be written at low current (and low speed) and the large structures can be written at high current (and high speed). Some patterns, for instance a fine electrode pattern with large bonding pads, can easily and manually be broken into a fine and coarse part and placed in two different layers. For many patterns this can however be very cumbersome but the process can also be automated with Beamer using "bulk and sleeve" setup. The concept is illustrated below. In this setup, Beamer will extract the periphery (sleeve) of a pattern into one layer and the bulk of structures into another layer. The bulk is oversized slightly (adding a bias) to ensure overlap between the two patterns at exposure. In this way structures can be defined with best possible edge definition while keeping exposure time down. [https://labmanager.dtu.dk/view_binary.php?fileId=5412 A Beamer flow with a default bulk and sleeve setup can be found here.] A 500 nm sleeve with a 200 nm overlap is a good starting point.

Thope: /* Fracturing */

2023-08-17T16:01:56Z

Fracturing

← Older revision		Revision as of 18:01, 17 August 2023
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	{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"		{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
	\|-		\|-
	\| [[image:ShotFilling.png\|~~1000px~~]]		\| [[image:ShotFilling.png\|800px]]
	\|-		\|-
	\| colspan="1" style="text-align:center;\|		\| colspan="1" style="text-align:center;\|

Thope: /* Fracturing */

2023-08-17T16:01:47Z

Fracturing

← Older revision		Revision as of 18:01, 17 August 2023
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	For precise control of critical dimension (CD) for small features it is important to consider the actual beam size and how it is placed, i.e. how the shapes are filled with beam shots. This is illustrated in the three shapes below. The left shape is 25 x 25 nm and written with a 5 nm beam spot. This works very well. However, if one wishes to write a 28 x 28 nm shape under the same circumstances shot filling becomes an issue. Similarly in the right hand shape, any shape that has a sloped edge will have shot filling issues. It is obvious that these issues are only a concern when CD control on a sub beam size level is needed.		For precise control of critical dimension (CD) for small features it is important to consider the actual beam size and how it is placed, i.e. how the shapes are filled with beam shots. This is illustrated in the three shapes below. The left shape is 25 x 25 nm and written with a 5 nm beam spot. This works very well. However, if one wishes to write a 28 x 28 nm shape under the same circumstances shot filling becomes an issue. Similarly in the right hand shape, any shape that has a sloped edge will have shot filling issues. It is obvious that these issues are only a concern when CD control on a sub beam size level is needed.

			{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
			\|-
			\| [[image:ShotFilling.png\|1000px]]
			\|-
			\| colspan="1" style="text-align:center;\|
			Illustration of shot filling issues for small shapes.
			\|}

	== Bulk and sleeve separation - double current exposure ==		== Bulk and sleeve separation - double current exposure ==

Thope: /* Fracturing */

2023-08-17T14:09:54Z

Fracturing

← Older revision		Revision as of 16:09, 17 August 2023
Line 117:		Line 117:


	For precise control of critical dimension (CD) for small features it is important to consider the actual beam size and how it is placed, i.e. how the shapes are filled with beam shots. This is illustrated in the three shapes below. The left shape is 25 x 25 nm and written with a 5 nm beam spot. This works very well. However, if one wishes to write a 28 x 28 nm shape under the same circumstances shot filling becomes an issue. Similarly in the right hand shape, any shape that has a sloped edge will have shot filling issues. It is obvious that these issues are only a concern ~~with~~ CD control on a sub beam size level is needed.		For precise control of critical dimension (CD) for small features it is important to consider the actual beam size and how it is placed, i.e. how the shapes are filled with beam shots. This is illustrated in the three shapes below. The left shape is 25 x 25 nm and written with a 5 nm beam spot. This works very well. However, if one wishes to write a 28 x 28 nm shape under the same circumstances shot filling becomes an issue. Similarly in the right hand shape, any shape that has a sloped edge will have shot filling issues. It is obvious that these issues are only a concern when CD control on a sub beam size level is needed.

	== Bulk and sleeve separation - double current exposure ==		== Bulk and sleeve separation - double current exposure ==

Thope: /* Fracturing */

2023-08-17T14:09:28Z

Fracturing

← Older revision		Revision as of 16:09, 17 August 2023
Line 115:		Line 115:
	==Fracturing==		==Fracturing==
	Pattern fracturing is an essential part of the pattern preparation process. Pattern fracturing will automatically happen at either Proximity Effect Correction in Beamer or upon export to V30. If one does not actively change fracturing parameters it will be done with default parameters which can work great in many cases. For best possible result it can however be necessary to actively control how the pattern is fractured, how beam shots are placed to form the pattern and what order pattern elements are written in. This can all be controlled with the ''Fracture'' node in Beamer and hence in combination with the ''PEC'' node it is one of the most impactful nodes. In this section we will illustrate some of the issues that the ''Fracture'' node can help mitigate. For information on the ''Fracture'' node in Beamer, please refer to the Beamer guide.		Pattern fracturing is an essential part of the pattern preparation process. Pattern fracturing will automatically happen at either Proximity Effect Correction in Beamer or upon export to V30. If one does not actively change fracturing parameters it will be done with default parameters which can work great in many cases. For best possible result it can however be necessary to actively control how the pattern is fractured, how beam shots are placed to form the pattern and what order pattern elements are written in. This can all be controlled with the ''Fracture'' node in Beamer and hence in combination with the ''PEC'' node it is one of the most impactful nodes. In this section we will illustrate some of the issues that the ''Fracture'' node can help mitigate. For information on the ''Fracture'' node in Beamer, please refer to the Beamer guide.


			For precise control of critical dimension (CD) for small features it is important to consider the actual beam size and how it is placed, i.e. how the shapes are filled with beam shots. This is illustrated in the three shapes below. The left shape is 25 x 25 nm and written with a 5 nm beam spot. This works very well. However, if one wishes to write a 28 x 28 nm shape under the same circumstances shot filling becomes an issue. Similarly in the right hand shape, any shape that has a sloped edge will have shot filling issues. It is obvious that these issues are only a concern with CD control on a sub beam size level is needed.

	== Bulk and sleeve separation - double current exposure ==		== Bulk and sleeve separation - double current exposure ==

Thope: /* Fracturing */

2023-08-17T12:50:11Z

Fracturing

← Older revision		Revision as of 14:50, 17 August 2023
Line 114:		Line 114:

	==Fracturing==		==Fracturing==
			Pattern fracturing is an essential part of the pattern preparation process. Pattern fracturing will automatically happen at either Proximity Effect Correction in Beamer or upon export to V30. If one does not actively change fracturing parameters it will be done with default parameters which can work great in many cases. For best possible result it can however be necessary to actively control how the pattern is fractured, how beam shots are placed to form the pattern and what order pattern elements are written in. This can all be controlled with the ''Fracture'' node in Beamer and hence in combination with the ''PEC'' node it is one of the most impactful nodes. In this section we will illustrate some of the issues that the ''Fracture'' node can help mitigate. For information on the ''Fracture'' node in Beamer, please refer to the Beamer guide.

	== Bulk and sleeve separation - double current exposure ==		== Bulk and sleeve separation - double current exposure ==