Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual - Revision history

Thope: /* HEIMAP */

2025-08-08T08:11:02Z

HEIMAP

← Older revision		Revision as of 10:11, 8 August 2025
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	HEIMAP is a sub program that measures height of the substrate with an IR laser. The incidence angle of the laser is 73 degrees.		HEIMAP is a sub program that measures height of the substrate with an IR laser. The incidence angle of the laser is 73 degrees.
	'''It has been observed by one user, that HEIMAP does not work on a SOI wafer coated with a thin layer of e-beam resist and ESPACER''', most liekly due to a Fabry-Perot effect in the substrate. The problem was solved by using thermally evaporated Al instead. The refractive index of Al (at 800 nm) is approximately 2, the refractive index of ESPACER approximately 1.25.

	{\| cellpadding="2" style="border: 2px solid darkgray;" align="right"		{\| cellpadding="2" style="border: 2px solid darkgray;" align="right"

Mmat at 15:04, 21 May 2025

2025-05-21T15:04:10Z

← Older revision		Revision as of 17:04, 21 May 2025
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	\|- border="0"		\|- border="0"
	\|[[File:SFOCUS.png\|500px]]		\|[[File:SFOCUS.png\|500px]]
	\|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU ~~Danchip~~ staff only.		\|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Nanolab staff only.

	\|}		\|}

Lgpe: /* Load and unload of cassettes into/from autoloader */

2021-07-05T12:33:36Z

Load and unload of cassettes into/from autoloader

← Older revision		Revision as of 14:33, 5 July 2021
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	[[File:IMG_0186.jpg\|600px\|right]]		[[File:IMG_0186.jpg\|600px\|right]]

	For safety reasons, users are only authorized to unload cassettes from ~~the autoloader and to load empty cassettes into~~ the autoloader.		For safety reasons, users are only authorized to unload cassettes from the autoloader.

Lgpe: /* Authorization */

2021-07-05T12:32:57Z

Authorization

← Older revision		Revision as of 14:32, 5 July 2021
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	*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine.		*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine.
	*No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader).		*No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader).
	*After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates ~~and re-load an '''empty''' cassette into the autoloader~~.		*After your exposure, fully trained users can unload their cassettes from the autoloader and unmount their substrates .
	*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.		*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.

Jmli: /* Authorization */

2019-11-25T20:39:57Z

Authorization

← Older revision		Revision as of 22:39, 25 November 2019
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	*Only authorized users are allowed to use this machine. You require at least 4 training sessions to be authorized.		*Only authorized users are allowed to use this machine. You require at least 4 training sessions to be authorized.
	*No unauthorized users are allowed into the e-beam room E-2 unless they are accompanied with a member of DTU ~~Danchip~~ staff.		*No unauthorized users are allowed into the e-beam room E-2 unless they are accompanied with a member of DTU Nanolab staff.
	*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU ~~Danchip~~ staff may access the backside of the machine.		*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine.
	*No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader).		*No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader).
	*After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates and re-load an '''empty''' cassette into the autoloader.		*After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates and re-load an '''empty''' cassette into the autoloader.
	*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU ~~Danchip~~ personel unmount your substrates.		*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.

Jmli: /* Type and location of machine */

2019-11-25T19:24:59Z

Type and location of machine

← Older revision		Revision as of 21:24, 25 November 2019
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	The JEOL JBX-9500FS electron beam lithography system is a spot electron beam lithography system designed for use in writing patterns (10 nm - 1 µm) in electron sensitive resists.		The JEOL JBX-9500FS electron beam lithography system is a spot electron beam lithography system designed for use in writing patterns (10 nm - 1 µm) in electron sensitive resists.

	The JEOL JBX-9500FS was purchased in 2012 and is installed in E-1 and E-2 at DTU ~~Danchip~~. The main console of the e-beam writer is installed in E-2 which is a class 10 (ISO 4) cleanroom with tight temperature and moisture control.		The JEOL JBX-9500FS was purchased in 2012 and is installed in E-1 and E-2 at DTU Nanolabv. The main console of the e-beam writer is installed in E-2 which is a class 10 (ISO 4) cleanroom with tight temperature and moisture control.

	The computer controlling the e-beam (EWS/9500) and the computer supporting the conversion of e-beam files are located in E-1 which is a class 100 (ISO 5) cleanroom.		The computer controlling the e-beam (EWS/9500) and the computer supporting the conversion of e-beam files are located in E-1 which is a class 100 (ISO 5) cleanroom.


	== Authorization ==		== Authorization ==

Jmli at 19:24, 25 November 2019

2019-11-25T19:24:38Z

← Older revision		Revision as of 21:24, 25 November 2019
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	'''Feedback to this page''': '''[mailto:e-beam@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]'''		'''Feedback to this page''': '''[mailto:e-beam@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]'''

	= Purpose, location and technical specifications =		= Purpose, location and technical specifications =

Lgpe: /* Subprogram that scan global marks: SETWFR */

2016-10-03T09:09:30Z

Subprogram that scan global marks: SETWFR

← Older revision		Revision as of 11:09, 3 October 2016
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	*Choose measurement mode 'Semi Auto'		*Choose measurement mode 'Semi Auto'
	*enter the material size and slot number (e.g 4A)		*enter the material size and slot number (e.g 4A)
	*enter the material center offset (from the pre-alignment) and design (L-edit/Clewin) ~~coordinates~~ of P mark and Q mark.		*enter the material center offset (from the pre-alignment) and design coordinates (from L-edit/Clewin) of P mark and Q mark.
	*In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok.		*In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok.
	*Repeat point 4 for Q-mark rough/fine		*Repeat point 4 for Q-mark rough/fine

Lgpe: /* Subprogram that scan global marks: SETWFR */

2016-10-03T09:08:46Z

Subprogram that scan global marks: SETWFR

← Older revision		Revision as of 11:08, 3 October 2016
Line 502:		Line 502:
	*Choose measurement mode 'Semi Auto'		*Choose measurement mode 'Semi Auto'
	*enter the material size and slot number (e.g 4A)		*enter the material size and slot number (e.g 4A)
	*enter the material center offset (from the pre-alignment) and L-edit coordinates of P mark and Q mark.		*enter the material center offset (from the pre-alignment) and design (L-edit/Clewin) coordinates of P mark and Q mark.
	*In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok.		*In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok.
	*Repeat point 4 for Q-mark rough/fine		*Repeat point 4 for Q-mark rough/fine

Taran: /* Subprogram that detcets chip marks: CHIPAL */

2016-09-19T11:12:09Z

Subprogram that detcets chip marks: CHIPAL

← Older revision		Revision as of 13:12, 19 September 2016
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	<br clear="all" />		<br clear="all" />

	== Subprogram that ~~detcets~~ chip marks: CHIPAL ==		== Subprogram that detects chip marks: CHIPAL ==
	<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top\|Go to top of this page]]</span>		<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top\|Go to top of this page]]</span>