Specific Process Knowledge/Lithography/EBeamLithography/High resolution patterning with HSQ - Revision history

Elelop at 10:52, 8 April 2026

2026-04-08T10:52:50Z

← Older revision		Revision as of 12:52, 8 April 2026
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/High_resolution_patterning_with_HSQ click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/High_resolution_patterning_with_HSQ click here]'''

	* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;''		* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016.''

	* ''This page was edited by Bingdong Chang 23 October 2017.''		* ''This page was edited by Bingdong Chang 23 October 2017.''

Lgpe at 09:25, 27 January 2020

2020-01-27T09:25:12Z

← Older revision		Revision as of 11:25, 27 January 2020
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	It is therefore not recommended to use HSQ as a trainings resist.		It is therefore not recommended to use HSQ as a trainings resist.

	~~/BR~~
	The details of the process is shown below in the table:		The details of the process is shown below in the table:
	<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">		<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">

Lgpe at 09:25, 27 January 2020

2020-01-27T09:25:05Z

← Older revision		Revision as of 11:25, 27 January 2020
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	In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.		In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
	It is therefore not recommended to use HSQ as a trainings resist.		It is therefore not recommended to use HSQ as a trainings resist.

	/BR		/BR
	The details of the process is shown below in the table:		The details of the process is shown below in the table:

Lgpe at 09:24, 27 January 2020

2020-01-27T09:24:52Z

← Older revision		Revision as of 11:24, 27 January 2020
Line 15:		Line 15:
	In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.		In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
	It is therefore not recommended to use HSQ as a trainings resist.		It is therefore not recommended to use HSQ as a trainings resist.
	/Br		/BR
	The details of the process is shown below in the table:		The details of the process is shown below in the table:
	<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">		<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">

Lgpe at 09:24, 27 January 2020

2020-01-27T09:24:36Z

← Older revision		Revision as of 11:24, 27 January 2020
Line 15:		Line 15:
	In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.		In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
	It is therefore not recommended to use HSQ as a trainings resist.		It is therefore not recommended to use HSQ as a trainings resist.
			/Br
	The details of the process is shown below in the table:		The details of the process is shown below in the table:
	<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">		<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">

Lgpe at 09:24, 27 January 2020

2020-01-27T09:24:10Z

← Older revision		Revision as of 11:24, 27 January 2020
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	</gallery>		</gallery>

			In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
			It is therefore not recommended to use HSQ as a trainings resist.
	The details of the process is shown below in the table:		The details of the process is shown below in the table:
	<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">		<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">
Line 18:		Line 20:
	</gallery>		</gallery>

	It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. PEC could also improve the resolution~~. In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.~~		It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. PEC could also improve the resolution.
	~~It is therefore not recommended to use HSQ as a trainings resist~~.
	The etch rate of HSQ with different concentration of BHF is shown as below.		The etch rate of HSQ with different concentration of BHF is shown as below.

Lgpe at 09:23, 27 January 2020

2020-01-27T09:23:35Z

← Older revision		Revision as of 11:23, 27 January 2020
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	</gallery>		</gallery>

	It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. The etch rate of HSQ with different concentration of BHF is shown as below.		It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. PEC could also improve the resolution. In most cases the time from taking HSQ out of the fridge to spin coat, and between spin coat and exposure as well as the time between exposure and development impacts on the resolution achieved.
			It is therefore not recommended to use HSQ as a trainings resist.
			The etch rate of HSQ with different concentration of BHF is shown as below.

	The details of the process is shown below in the table:		The details of the process is shown below in the table:

Bghe at 12:01, 26 October 2017

2017-10-26T12:01:42Z

← Older revision		Revision as of 14:01, 26 October 2017
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			'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/High_resolution_patterning_with_HSQ click here]'''

	* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;''		* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;''

Bghe: Created page with "* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;'' * ''This page was edited by Bingdong Chang 23 October 2017.'' High resolution patterns (sub-10nm dots with..."

2017-10-26T11:59:13Z

Created page with "* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;'' * ''This page was edited by Bingdong Chang 23 October 2017.'' High resolution patterns (sub-10nm dots with..."

New page

* ''This work was done by Bingdong Chang and Xiaoli Zhu in 2016;''

* ''This page was edited by Bingdong Chang 23 October 2017.''

High resolution patterns (sub-10nm dots with 20nm pitch, sub-10nm lines with 50nm pitch) can be patterned with HSQ resist.
Some SEM images are shown as below:

<gallery caption="SEM images of high resolution HSQ patterns" widths="400" heights="300" perrow="2">
image: HSQ2.png|Dots with sub-10nm diameters
image: HSQ3.png|Lines with sub-10nm linewidths
</gallery>

The details of the process is shown below in the table:
<gallery caption="Processing parameters for high resolution HSQ patterning" widths="600" heights="300" perrow="1">
image: HSQ1.png
</gallery>

It should be noticed that to reduce the broadening of patterns caused by forward and backward scattered electrons, the HSQ resist was first thinned down to below 50nm using BHF before exposure. The etch rate of HSQ with different concentration of BHF is shown as below.

The details of the process is shown below in the table:
<gallery caption="Etch rate of HSQ (XR-1541 006) with BHF" widths="400" heights="300" perrow="2">
image: HSQ4.png
image: HSQ5.png
</gallery>

The patterns were successfully transferred into silicon by dry etching (with ASE, recipe Pxnano2)

<gallery caption="Etch rate of HSQ (XR-1541 006) with BHF" widths="400" heights="300" perrow="2">
image: HSQ6.png
image: HSQ7.png
image: HSQ8.png
image: HSQ9.png
</gallery>

Notice that roughness could be generated during etch by redeposition of HSQ hard mask.
For more details, please contact Bingdong Chang (bincha@dtu.dk).