Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage - Revision history

Elelop at 14:23, 4 February 2026

2026-02-04T14:23:16Z

← Older revision		Revision as of 16:23, 4 February 2026
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	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	\|'''~~[[Specific_Process_Knowledge/Lithography/mrEBL6000\|~~mr EBL 6000.1]]'''		\|'''mr EBL 6000.1'''
	\|Negative		\|Negative
	\|[http://http://www.microresist.de/home_en.htm MicroResist]		\|[http://http://www.microresist.de/home_en.htm MicroResist]

Thope: /* Charging of non-conductive substrates */

2025-08-08T08:07:27Z

Charging of non-conductive substrates

← Older revision		Revision as of 10:07, 8 August 2025
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	The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx\|Process Flow CSAR with Al]].		The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx\|Process Flow CSAR with Al]].

	If your process can not utilize a aluminum discharge layer, Espacer might be another possibility to pursue. Espacer is a chemical that works as a discharging layer; it is spun onto the wafer on top of the resist and easily rinsed off the wafer after e-beam exposure. Visit this page for more information: [[Specific_Process_Knowledge/Lithography/Espacer\|Espacer]]

	= Literature on E-beam Lithography =		= Literature on E-beam Lithography =
	* Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary		* Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary

Thope: /* Electron-Beam Lithography at DTU Nanolab */

2023-12-12T11:33:09Z

Electron-Beam Lithography at DTU Nanolab

← Older revision		Revision as of 13:33, 12 December 2023
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	DTU Nanolab has two EBL exposure systems, a JEOL JBX-9500FSZ and a Raith eLINE Plus system. The two systems are very different and new users should consult the EBL team to dertermine which system is appropriate for a particular project or type of sample. The general specifications of the two tools are given in the table below and may serve as a guideline for choice of system to use, especially the pros and cons list at the end of the table.		DTU Nanolab has two EBL exposure systems, a JEOL JBX-9500FSZ and a Raith eLINE Plus system. The two systems are very different and new users should consult the EBL team to dertermine which system is appropriate for a particular project or type of sample. The general specifications of the two tools are given in the table below and may serve as a guideline for choice of system to use, especially the pros and cons list at the end of the table.


	For more information and specific workflows on either tool, please refer to their respective pages; [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ\|JEOL JBX-9500FSZ]] or [[Specific_Process_Knowledge/Lithography/EBeamLithography/eLINE\|Raith eLINE Plus]].

Thope: /* Resist coating */

2023-01-30T08:05:12Z

Resist coating

← Older revision		Revision as of 10:05, 30 January 2023
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	\|		\|
	\|[[media:Process Flow HSQ.docx\|process flow HSQ]]		\|[[media:Process Flow HSQ.docx\|process flow HSQ]]
	[[/~~High_resolution_patterning_with_HSQ~~\|High resolution patterning with HSQ]]		[[/Lithography/EBeamLithography/High resolution patterning with HSQ\|High resolution patterning with HSQ]]

	\|-		\|-

Thope: /* Resist coating */

2023-01-30T08:04:00Z

Resist coating

← Older revision		Revision as of 10:04, 30 January 2023
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	\|		\|
	\|[[media:Process Flow HSQ.docx\|process flow HSQ]]		\|[[media:Process Flow HSQ.docx\|process flow HSQ]]
	[[/~~High resolution patterning with HSQ~~\|High resolution patterning with HSQ]]		[[/High_resolution_patterning_with_HSQ\|High resolution patterning with HSQ]]

	\|-		\|-

Thope: /* Resist coating */

2023-01-30T08:01:17Z

Resist coating

← Older revision		Revision as of 10:01, 30 January 2023
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	\|IPA		\|IPA
	\|mr REM		\|mr REM
	\|[[media:Process_Flow_mrEBL6000.docx‎\|~~Process_Flow_mrEBL6000.docx‎~~]]		\|[[media:Process_Flow_mrEBL6000.docx‎\|Process Flow‎]]

	\|-		\|-

Thope: /* Resist coating */

2023-01-30T08:00:41Z

Resist coating

← Older revision		Revision as of 10:00, 30 January 2023
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	\|IPA		\|IPA
	\|acetone/1165		\|acetone/1165
	\|[[media:Process_Flow_ZEP.docx\|~~Process_Flow_ZEP.docx~~]]		\|[[media:Process_Flow_ZEP.docx\|Process Flow ZEP]]


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	\|		\|
	\|acetone/1165		\|acetone/1165
	\|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎\|~~Process_Flow_Trilayer_Ebeam_Resist.docx‎~~]]		\|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎\|Process Flow]]

	\|-		\|-

Thope: /* Resist coating */

2023-01-30T07:59:05Z

Resist coating

← Older revision		Revision as of 09:59, 30 January 2023
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	\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>		\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>
	\|Anisole		\|Anisole
	\|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf‎\|JJAP-51-~~06FC05.pdf‎~~]], [[media:JVB001037.pdf‎\|JVB001037~~.pdf‎~~]]		\|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf‎\|JJAP-51-06FC05‎]], [[media:JVB001037.pdf‎\|JVB001037]]
	\|IPA		\|IPA
	\|acetone/1165		\|acetone/1165
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	\|[http://www.allresist.com AllResist]		\|[http://www.allresist.com AllResist]
	\|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.		\|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
	\|[[media:AR_P617.pdf‎\|AR_P617~~.pdf‎~~]]		\|[[media:AR_P617.pdf‎\|AR_P617]]
	\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>		\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>
	\|PGME		\|PGME
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	\|[http://http://www.microresist.de/home_en.htm MicroResist]		\|[http://http://www.microresist.de/home_en.htm MicroResist]
	\|Standard negative resist		\|Standard negative resist
	\|[[media:mrEBL6000 Processing Guidelines.pdf‎\|mrEBL6000 processing ~~Guidelines.pdf‎~~]]		\|[[media:mrEBL6000 Processing Guidelines.pdf‎\|mrEBL6000 processing Guidelines‎]]
	\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>		\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>
	\|Anisole		\|Anisole
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	\|[http://www.allresist.com AllResist]		\|[http://www.allresist.com AllResist]
	\|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information.		\|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information.
	\|[[media:AR-N7500-7520.pdf‎\|AR-N7500-7520~~.pdf‎~~]]		\|[[media:AR-N7500-7520.pdf‎\|AR-N7500-7520]]
	\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>		\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>
	\|PGMEA		\|PGMEA
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	\|Positive		\|Positive
	\| [http://www.allresist.com AllResist]		\| [http://www.allresist.com AllResist]
	\|~~We have various types of PMMA in the cleanroom. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.~~		\|
	\|		\|
	\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>		\|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table\|here]] </u>
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	\|IPA		\|IPA
	\|acetone/1165		\|acetone/1165
	\|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎\|~~Process_Flow_Trilayer_Ebeam_Resist.docx‎~~]]		\|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎\|Process Flow‎]]

	\|}		\|}

Thope: /* Substrate preparation */

2023-01-27T11:50:15Z

Substrate preparation

← Older revision		Revision as of 13:50, 27 January 2023
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	=== Discharge layer application ===		=== Discharge layer application ===
	As exposure is done with an electron beam, insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry when working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator\|Thermal evaporator]] and [[Specific_Process_Knowledge/Thin film deposition/Wordentec\|Wordentec]].		As exposure is done with an electron beam, insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry when working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator\|Thermal evaporator]] and [[Specific_Process_Knowledge/Thin film deposition/Wordentec\|Wordentec]].

			For samples with 2D materials such as graphene, HBN, etc., it is '''mandatory''' to apply a 20 nm Al layer on top of the resist in order to expose the substrate in the JEOL 9500 system. The Raith eLine system does not have this requirement.

	The Al layer can be removed with MIF726 after exposure. MIF726 etch rate in Al is about 0.5 nm/s, although only about 1 nm/min in oxidized aluminium.		The Al layer can be removed with MIF726 after exposure. MIF726 etch rate in Al is about 0.5 nm/s, although only about 1 nm/min in oxidized aluminium.

	Another possibility is to use a spin-on conductive layer such as AR-PC 5090. It can be removed with water after exposure. At the moment we do not have much experience with this, contact the EBL team if you are interested in this option.		Another possibility is to use a spin-on conductive layer such as AR-PC 5090. It can be removed with water after exposure. At the moment we do not have much experience with this, contact the EBL team if you are interested in this option.

			=== Inspection ===

	== Development ==		== Development ==

Thope: /* Discharge layer application */

2023-01-27T11:46:59Z

Discharge layer application

← Older revision		Revision as of 13:46, 27 January 2023
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	=== Discharge layer application ===		=== Discharge layer application ===
	As exposure is done with an electron beam, insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry ~~When~~ working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator\|Thermal evaporator]] and [[Specific_Process_Knowledge/Thin film deposition/Wordentec\|Wordentec]].		As exposure is done with an electron beam, insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry when working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator\|Thermal evaporator]] and [[Specific_Process_Knowledge/Thin film deposition/Wordentec\|Wordentec]].

			The Al layer can be removed with MIF726 after exposure. MIF726 etch rate in Al is about 0.5 nm/s, although only about 1 nm/min in oxidized aluminium.

			Another possibility is to use a spin-on conductive layer such as AR-PC 5090. It can be removed with water after exposure. At the moment we do not have much experience with this, contact the EBL team if you are interested in this option.

	== Development ==		== Development ==