Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617 - Revision history

Thope: /* Development */

2025-02-07T23:00:28Z

Development

← Older revision		Revision as of 01:00, 8 February 2025
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	=Development=		=Development=
	AR-P is developed in AR 600-50 and IPA is used to rinse and stop development. As we have no dedicated setup for this it must be done in beakers in the EBL development fumehood in E4.		AR-P 617 is developed in AR 600-50 and IPA is used to rinse and stop development. As we have no dedicated setup for this it must be done in beakers in the EBL development fumehood in E4.

	Typical development time is 60-90 seconds and it is recommended to rinse for 30 seconds in IPA.		Typical development time is 60-90 seconds and it is recommended to rinse for 30 seconds in IPA.

2024-04-25T05:31:59Z

Contrast curve

2024-04-25T05:30:03Z

Contrast curve

← Older revision		Revision as of 07:30, 25 April 2024
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	=Contrast curve=		=Contrast curve=
	A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 5 to 120 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are:		A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 5 to 120 µC/cm<sup>2</sup>. The dose to clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are:

	*Date: February 5th 2024		*Date: February 5th 2024

2024-02-13T07:44:19Z

Dual layer for lift off

← Older revision		Revision as of 09:44, 13 February 2024
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	\|-		\|-
	\| colspan="1" style="text-align: center;\|		\| colspan="1" style="text-align: center;\|
	Bi-layer resist stack exposed at 400 µC/cm<sup>2</sup>.		Bi-layer resist stack exposed at 400 µC/cm<sup>2</sup>. Au coated for imaging.
	\|}		\|}

2024-02-13T07:43:46Z

Dual layer for lift off

← Older revision		Revision as of 09:43, 13 February 2024
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	{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"		{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
	\|-		\|-
	\| [[~~file~~:ARP617_240212_D1005.~~tif~~\|800px]]		\| [[image:ARP617_240212_D1005.png\|800px]]
	\|-		\|-
	\| colspan="1" style="text-align: center;\|		\| colspan="1" style="text-align: center;\|
	AR-~~P 617.06 contrast curve from three different soft bake temperatures. Fitted lines are for determining contrast~~.		Bi-layer resist stack exposed at 400 µC/cm<sup>2</sup>.
	\|}		\|}

2024-02-13T07:40:26Z

Dual layer for lift off

← Older revision		Revision as of 09:40, 13 February 2024
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	{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"		{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
	\|-		\|-
	\| [[~~image~~:ARP617_240212_D1005.tif\|800px]]		\| [[file:ARP617_240212_D1005.tif\|800px]]
	\|-		\|-
	\| colspan="1" style="text-align: center;\|		\| colspan="1" style="text-align: center;\|
	AR-P 617.06 contrast curve from three different soft bake temperatures. Fitted lines are for determining contrast.		AR-P 617.06 contrast curve from three different soft bake temperatures. Fitted lines are for determining contrast.
	\|}		\|}

2024-02-13T07:40:07Z

Dual layer for lift off

← Older revision		Revision as of 09:40, 13 February 2024
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	The second development can be further extended to promote additional undercut.		The second development can be further extended to promote additional undercut.

			{\| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
			\|-
			\| [[image:ARP617_240212_D1005.tif\|800px]]
			\|-
			\| colspan="1" style="text-align: center;\|
			AR-P 617.06 contrast curve from three different soft bake temperatures. Fitted lines are for determining contrast.
			\|}

2024-02-13T07:38:09Z

Dual layer for lift off

← Older revision		Revision as of 09:38, 13 February 2024
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	*2nd development		*2nd development
	**Manual development in fumehood 10 - AR 600-50 for 90 sec and 30 sec IPA rinse		**Manual development in fumehood 10 - AR 600-50 for 90 sec and 30 sec IPA rinse

			The second development can be further extended to promote additional undercut.

2024-02-13T07:36:54Z

Dual layer for lift off

@@ Line 56: / Line 56: @@
 Bi-layer resist stack for lift off process:
-*Date: February 8th 2024
+*Date: February 12th 2024
 *Substrate: 2" Si
 *1st layer coating
 **Coater: Labspin 2

2024-02-13T07:30:35Z

Dual layer for lift off