Specific Process Knowledge/Lithography/Development/UV developer - Revision history

Jehem at 07:22, 13 March 2026

2026-03-13T07:22:12Z

← Older revision		Revision as of 09:22, 13 March 2026
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	! scope=row style="text-align: left;" \| Handling method		! scope=row style="text-align: left;" \| Handling method
	\|		\|
	*~~Vvacuum~~ chuck for 100 mm & 150 mm wafers		*Vacuum chuck for 100 mm & 150 mm wafers
	\|-		\|-
	! scope=row style="text-align: left;" \| Process temperature		! scope=row style="text-align: left;" \| Process temperature
	\| Room temperature		\| Room temperature
	\|-		\|-
	! scope=row style="text-align: left;" \| Process ~~agitaion~~		! scope=row style="text-align: left;" \| Process agitation
	\| 1 cycles per 30 seconds		\| 1 cycles per 30 seconds
	\|-		\|-
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	Pre-wet may be done using developer or DI water, or it may be skipped. It consists of a short dispense at medium spin speed (2s @ 1200 rpm).		Pre-wet may be done using developer or DI water, or it may be skipped. It consists of a short dispense at medium spin speed (2s @ 1200 rpm).

	Puddle dispense is done by dispensing developer (AZ 726 MIF) to the center of the wafer in order to build up a puddle of developer on the wafer. During the dispense, the wafer may be stopped or rotating slowly (30 rpm). The developer is ~~dispenced~~ at a rate of approximately 225 ml/min. A dispense time of 3s, and 7s is used for 4", and 6" wafers, respectively, corresponding to a volume of 11 ml, and 26 ml, respectively.		Puddle dispense is done by dispensing developer (AZ 726 MIF) to the center of the wafer in order to build up a puddle of developer on the wafer. During the dispense, the wafer may be stopped or rotating slowly (30 rpm). The developer is dispensed at a rate of approximately 225 ml/min. A dispense time of 3s, and 7s is used for 4", and 6" wafers, respectively, corresponding to a volume of 11 ml, and 26 ml, respectively.

	Development is carried out by leaving the developer puddle on the wafer for the duration of the development time (puddle time). The rotation is stopped during the development, but the developer may be agitated by rotating the wafer a few turns at low speed, e.g. 2s @ 30 rpm halfway through the development time, in order to facilitate good uniformity.		Development is carried out by leaving the developer puddle on the wafer for the duration of the development time (puddle time). The rotation is stopped during the development, but the developer may be agitated by rotating the wafer a few turns at low speed, e.g. 2s @ 30 rpm halfway through the development time, in order to facilitate good uniformity.
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	Special sequences:		Special sequences:
	*DCH 100mm SP 60s no ~~spinoff~~		*DCH 100mm SP 60s no spin-off

Jehem at 13:43, 12 March 2026

2026-03-12T13:43:02Z

← Older revision		Revision as of 15:43, 12 March 2026
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	{{cc-nanolab}}		{{cc-nanolab}}

	~~[[Category: Equipment\|Lithography]]~~
	~~[[Category: Lithography]]~~

	=Developer: TMAH UV-lithography=		=Developer: TMAH UV-lithography=

Jehem at 13:42, 12 March 2026

2026-03-12T13:42:28Z

← Older revision		Revision as of 15:42, 12 March 2026
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	{{cc-nanolab}}		{{cc-nanolab}}

			[[Category: Equipment\|Lithography]]
			[[Category: Lithography]]

	=Developer: TMAH UV-lithography=		=Developer: TMAH UV-lithography=

Jehem at 13:42, 12 March 2026

2026-03-12T13:42:01Z

← Older revision		Revision as of 15:42, 12 March 2026
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	{{cc-nanolab}}		{{cc-nanolab}}

	~~__TOC__~~

	=Developer: TMAH UV-lithography=		=Developer: TMAH UV-lithography=

Jehem at 13:41, 12 March 2026

2026-03-12T13:41:13Z

← Older revision		Revision as of 15:41, 12 March 2026
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	{{cc-nanolab}}		{{cc-nanolab}}

			__TOC__

	=Developer: TMAH UV-lithography=		=Developer: TMAH UV-lithography=

Jehem at 13:37, 12 March 2026

2026-03-12T13:37:54Z

@@ Line 87: / Line 87: @@
 =Process information=
 *[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing|General process information]]
 *[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
 *[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]
 <br clear="all"/>

Jehem at 09:26, 12 March 2026

2026-03-12T09:26:36Z

Show changes

Jehem: /* Equipment performance and process related parameters */

2026-03-11T12:28:09Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:28, 11 March 2026
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*AZ 726 MIF (TMAH): 230 ml/min		*AZ 726 MIF (TMAH): 230 ml/min
	*~~Process~~ DI water: 400 ml/min (with BSR+CR active)		*Topside rinse DI water: 400 ml/min (with BSR+CR active)
	*Backside rinse DI water: 55 ml/min (with TSR+CR active)		*Backside rinse DI water: 55 ml/min (with TSR+CR active)
	*Process Nitrogen: 50 l/min		*Process Nitrogen: 50 l/min

Jehem: /* Equipment performance and process related parameters */

2026-03-11T10:43:34Z

Equipment performance and process related parameters

← Older revision		Revision as of 12:43, 11 March 2026
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*AZ 726 MIF (TMAH): 230 ml/min		*AZ 726 MIF (TMAH): 230 ml/min
	*Process DI water: 400 ml/min (with BSR+CR)		*Process DI water: 400 ml/min (with BSR+CR active)
	*Backside rinse DI water: 55 ml/min (with TSR+CR)		*Backside rinse DI water: 55 ml/min (with TSR+CR active)
	*Process Nitrogen: 50 l/min		*Process Nitrogen: 50 l/min
	\|-		\|-
	\|}		\|}
	<br clear="all" />		<br clear="all" />

Jehem: /* Equipment performance and process related parameters */

2026-03-11T10:43:23Z

Equipment performance and process related parameters

← Older revision		Revision as of 12:43, 11 March 2026
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*AZ 726 MIF (TMAH): 230 ml/min		*AZ 726 MIF (TMAH): 230 ml/min
	*Process DI water: 400 ml/min (with BSR+CR ~~active~~)		*Process DI water: 400 ml/min (with BSR+CR)
	*Backside rinse DI water: 55 ml/min (with TSR+CR ~~active~~)		*Backside rinse DI water: 55 ml/min (with TSR+CR)
	*Process Nitrogen: 50 l/min		*Process Nitrogen: 50 l/min
	\|-		\|-
	\|}		\|}
	<br clear="all" />		<br clear="all" />