Specific Process Knowledge/Lithography/Development/SU8 developer - Revision history

Jehem at 14:17, 18 February 2026

2026-02-18T14:17:29Z

← Older revision		Revision as of 16:17, 18 February 2026
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			{{cc-nanolab}}

	=Developer: SU8 (Wet Bench)=		=Developer: SU8 (Wet Bench)=
	[[file:SU8dev.JPG\|400px\|right\|thumb\|The Developer: SU8 (Wet Bench) is located in E-4.]]		[[file:SU8dev.JPG\|400px\|right\|thumb\|The Developer: SU8 (Wet Bench) is located in E-4.]]

Jehem at 14:35, 14 January 2026

2026-01-14T14:35:08Z

Show changes

Jehem: /* Process information */

2026-01-12T11:01:55Z

Process information

← Older revision		Revision as of 13:01, 12 January 2026
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	=Process information=		=Process information=
	Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.		Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.


	Development time is strongly dependent on the SU-8 thickness.		Development time is strongly dependent on the SU-8 thickness.
	*Minimum development time: 1 min per 20 µm in FIRST		*Minimum development time: 1 min per 20 µm in FIRST


	Suggestions:		Suggestions:
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	*180-250µm: 15 min. in FIRST; 15 min. in FINAL		*180-250µm: 15 min. in FIRST; 15 min. in FINAL

	==Equipment performance and process related parameters==		=Equipment performance and process related parameters=

	{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

Jehem: /* Process information */

2026-01-12T11:01:45Z

Process information

← Older revision		Revision as of 13:01, 12 January 2026
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	The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''		The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''

	==Process information==		=Process information=
	Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.		Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.


	Development time is strongly dependent on the SU-8 thickness.		Development time is strongly dependent on the SU-8 thickness.
	*Minimum development time: 1 min per 20 µm in FIRST		*Minimum development time: 1 min per 20 µm in FIRST


	Suggestions:		Suggestions:

Jehem at 11:00, 12 January 2026

2026-01-12T11:00:34Z

← Older revision		Revision as of 13:00, 12 January 2026
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	==Developer: SU8 (Wet Bench)==		=Developer: SU8 (Wet Bench)=
	[[Image:SU8dev.JPG\|400px\|right\|thumb\|The Developer: SU8 (Wet Bench) is located in E-4.]]		[[Image:SU8dev.JPG\|400px\|right\|thumb\|The Developer: SU8 (Wet Bench) is located in E-4.]]

Line 6:		Line 6:
	The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''		The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''

	===Process information===		==Process information==
	Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.		Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.

Line 19:		Line 19:
	*180-250µm: 15 min. in FIRST; 15 min. in FINAL		*180-250µm: 15 min. in FIRST; 15 min. in FINAL

	=== Equipment performance and process related parameters ===		==Equipment performance and process related parameters==

	{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

Jehem: Created page with "==Developer: SU8 (Wet Bench)== The Developer: SU8 (Wet Bench) is located in E-4. The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manual..."

2026-01-12T08:56:36Z

Created page with "==Developer: SU8 (Wet Bench)== 400px|right|thumb|The Developer: SU8 (Wet Bench) is located in E-4. The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manual..."

New page

==Developer: SU8 (Wet Bench)==
[[Image:SU8dev.JPG|400px|right|thumb|The Developer: SU8 (Wet Bench) is located in E-4.]]

The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA in dedicated IPA bath and put for drying in the empty bath.

The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''

===Process information===
Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.

Development time is strongly dependent on the SU-8 thickness.
*Minimum development time: 1 min per 20 µm in FIRST

Suggestions:
*2-5µm: 2 min. in FIRST; 2 min. in FINAL
*40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
*180-250µm: 15 min. in FIRST; 15 min. in FINAL

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of:
*SU-8
|-
!style="background:silver; color:black;" align="center" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
mr-Dev 600

(PGMEA)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black"|
Single wafer holder
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black"|
Magnetic stirrer
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black"|
IPA
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
*100 mm wafers
*150 mm wafers, check the liquid level in the baths
*200 mm wafer, check the liquid level in the baths
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon and glass substrates
*Film, or pattern, of all materials except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
1-6
|-
|}
<br clear="all" />