Specific Process Knowledge/Lithography/DUVStepperLithography/Process Instructions - Revision history

Jehem: /* Process Instructions */

2023-02-03T12:39:14Z

Process Instructions

← Older revision		Revision as of 14:39, 3 February 2023
Line 10:		Line 10:
	== Process Instructions ==		== Process Instructions ==

	The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#~~S.C3.9CSS_Spinner-Stepper~~\|LabAdviser]].		The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper\|LabAdviser]].

	Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.		Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.

Jehem at 11:37, 3 February 2023

2023-02-03T11:37:52Z

← Older revision		Revision as of 13:37, 3 February 2023
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	~~Feedback to this page~~:~~'''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge~~/Lithography/~~DUVStepperLithography/Process_Instructions click here]'''~~		{{:Specific Process Knowledge/Lithography/authors_generic}}

			'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process_Instructions click here]'''

			[[Category: Equipment\|Lithography]]
			[[Category: Lithography]]

			__TOC__

	== Process Instructions ==		== Process Instructions ==

Jmli: /* Process Instructions */

2019-11-25T19:37:05Z

Process Instructions

← Older revision		Revision as of 21:37, 25 November 2019
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	For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation\|optical simulation]].		For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation\|optical simulation]].

	The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of ~~Danchip~~. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.		The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Nanolab. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.

Jmli at 19:36, 25 November 2019

2019-11-25T19:36:44Z

← Older revision		Revision as of 21:36, 25 November 2019
Line 1:		Line 1:
	Feedback to this page:'''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process_Instructions click here]'''		Feedback to this page:'''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process_Instructions click here]'''

Makei at 10:47, 27 May 2016

2016-05-27T10:47:28Z

← Older revision		Revision as of 12:47, 27 May 2016
Line 1:		Line 1:
	Feedback to this page:'''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process_Instructions click here]'''		Feedback to this page:'''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process_Instructions click here]'''


	~~=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png\|200px]]=~~

Taran: /* Process Instructions */

2016-05-19T07:34:51Z

Process Instructions

← Older revision		Revision as of 09:34, 19 May 2016
Line 7:		Line 7:
	== Process Instructions ==		== Process Instructions ==

	The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in ~~the LabAdviser~~ [[~~http://labadviser.danchip.dtu.dk/index.php/~~Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper]].		The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper\|LabAdviser]].

	Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.		Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.

	For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of ~~optical simulation~~ [[~~http://labadviser.danchip.dtu.dk/index.php/~~Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation]].		For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation\|optical simulation]].

	The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.		The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.

Taran: /* Process Instructions */

2016-05-19T07:32:25Z

Process Instructions

← Older revision		Revision as of 09:32, 19 May 2016
Line 7:		Line 7:
	== Process Instructions ==		== Process Instructions ==

	The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#~~SÜSSSpinner~~-Stepper]].		The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper]].

	Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.		Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.

	For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of optical simulation [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography//Optimization_and_Simulation]].		For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of optical simulation [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation]].

	The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.		The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.

Makei at 13:34, 10 May 2016

2016-05-10T13:34:22Z

← Older revision		Revision as of 15:34, 10 May 2016
Line 1:		Line 1:
	Feedback to this page:'''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process_Instructions click here]'''		Feedback to this page:'''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process_Instructions click here]'''


			=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png\|200px]]=


	== Process Instructions ==		== Process Instructions ==

Makei at 13:09, 9 May 2016

2016-05-09T13:09:21Z

← Older revision		Revision as of 15:09, 9 May 2016
Line 3:		Line 3:
	== Process Instructions ==		== Process Instructions ==

	The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#~~SÜSS Spinner~~-Stepper]].		The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#SÜSSSpinner-Stepper]].

	Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.		Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.

Makei at 12:40, 9 May 2016

2016-05-09T12:40:24Z

← Older revision		Revision as of 14:40, 9 May 2016
Line 7:		Line 7:
	Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.		Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.

	For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of optical simulation [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography//~~Optimization and Simulation~~]].		For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of optical simulation [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography//Optimization_and_Simulation]].

	The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.		The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.