Specific Process Knowledge/Lithography/DUVStepperLithography/Optimization and Simulation - Revision history

Elkh at 08:52, 22 September 2026

2026-09-22T08:52:01Z

← Older revision		Revision as of 09:52, 22 September 2026
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation click here]'''

	[[Category: Equipment\|Lithography]]		[[index.php?title=Category:Equipment\|Lithography]]
	[[Category: Lithography]]		[[index.php?title=Category:Lithography]]

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	== Optimization and Simulation in Deep UV lithography ==		== Optimization and Simulation in Deep UV lithography ==

	In order to accomplish the best fidelity of the produced pattern on the wafer, both the characteristics of the illumination system, the exposure process and the dimensions/ shapes of the designed structures on the reticle (mask for projection lithography) must be adjusted. Different techniques can be applied to improve the resolution and the depth of focus of the illumination tool for each individual pattern. Either the mask design will be optimized with the help of optical proximity corrections (OPC) or- in a second technique -the optical illumination system will be adapted to the respective pattern. Here relevant optical parameters as the coherence of the aerial image or the numerical aperture of the projection lens can be modified, or alternatively off-axis illumination - as i.e. annular and quadrupole sources - can be used.		In order to accomplish the best fidelity of the produced pattern on the wafer, both the characteristics of the illumination system, the exposure process and the dimensions/ shapes of the designed structures on the reticle (mask for projection lithography) must be adjusted. Different techniques can be applied to improve the resolution and the depth of focus of the illumination tool for each individual pattern. Either the mask design will be optimized with the help of optical proximity corrections (OPC) or, in a second technique, the optical illumination system will be adapted to the respective pattern. Here relevant optical parameters as the coherence of the aerial image or the numerical aperture of the projection lens can be modified, or alternatively off-axis illumination - as i.e. annular and quadrupole sources - can be used.

	Both, optimizing the mask design and the illumination system are useful approaches that can be exerted to achieve resist structures on the wafer with the most accurate CD control, the preferred sidewall angles, the lowest corner rounding or line end shortening. Additionally, the impact of the reaction kinetics of the resist during exposure, post exposure bake and development must be considered in order to exceed the requirements of the device to be fabricated.		Both, optimizing the mask design and the illumination system are useful approaches that can be exerted to achieve resist structures on the wafer with the most accurate CD control, the preferred sidewall angles, the lowest corner rounding or line end shortening. Additionally, the impact of the reaction kinetics of the resist during exposure, post exposure bake and development must be considered in order to exceed the requirements of the device to be fabricated.

Jehem at 11:36, 3 February 2023

2023-02-03T11:36:37Z

← Older revision		Revision as of 12:36, 3 February 2023
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	~~Feedback to this page~~:~~'''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge~~/Lithography/~~DUVStepperLithography/Optimization_and_Simulation click here]'''~~		{{:Specific Process Knowledge/Lithography/authors_generic}}

			'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation click here]'''

			[[Category: Equipment\|Lithography]]
			[[Category: Lithography]]

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	== Optimization and Simulation in Deep UV lithography ==		== Optimization and Simulation in Deep UV lithography ==

Taran: /* Optimization and Simulation in Deep UV lithography */

2018-08-16T10:31:29Z

Optimization and Simulation in Deep UV lithography

← Older revision		Revision as of 11:31, 16 August 2018
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	== Optimization and Simulation in Deep UV lithography ==		== Optimization and Simulation in Deep UV lithography ==

	In order to accomplish the best fidelity of the produced pattern on the wafer, both the characteristics of the illumination system, the exposure process and the dimensions/ shapes of the designed structures on the reticle (mask for projection lithography) must be adjusted. Different techniques can be applied to improve the resolution and the depth of focus of the illumination tool for each individual pattern. Either the mask design will be optimized with the help of optical proximity corrections (OPC) or- in a second technique -the optical illumination system will be adapted to the respective pattern. Here relevant optical parameters as the coherence of the aerial image or the numerical aperture of the projection lens can be modified or alternatively off-axis illumination - as i.e. annular and quadrupole sources - can be used.		In order to accomplish the best fidelity of the produced pattern on the wafer, both the characteristics of the illumination system, the exposure process and the dimensions/ shapes of the designed structures on the reticle (mask for projection lithography) must be adjusted. Different techniques can be applied to improve the resolution and the depth of focus of the illumination tool for each individual pattern. Either the mask design will be optimized with the help of optical proximity corrections (OPC) or- in a second technique -the optical illumination system will be adapted to the respective pattern. Here relevant optical parameters as the coherence of the aerial image or the numerical aperture of the projection lens can be modified, or alternatively off-axis illumination - as i.e. annular and quadrupole sources - can be used.

	Both, optimizing the mask design and the illumination system are useful approaches that can be exerted to achieve resist structures on the wafer with the most accurate CD control, the preferred sidewall angles, the lowest corner rounding or line end shortening. Additionally, the impact of the reaction kinetics of the resist during exposure, post exposure bake and development must be considered in order to exceed the requirements of the device to be fabricated.		Both, optimizing the mask design and the illumination system are useful approaches that can be exerted to achieve resist structures on the wafer with the most accurate CD control, the preferred sidewall angles, the lowest corner rounding or line end shortening. Additionally, the impact of the reaction kinetics of the resist during exposure, post exposure bake and development must be considered in order to exceed the requirements of the device to be fabricated.

Makei at 10:46, 27 May 2016

2016-05-27T10:46:03Z

← Older revision		Revision as of 11:46, 27 May 2016
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	Feedback to this page:'''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation click here]'''		Feedback to this page:'''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization_and_Simulation click here]'''




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	== Optimization and Simulation in Deep UV lithography ==		== Optimization and Simulation in Deep UV lithography ==

Makei at 10:38, 27 May 2016

2016-05-27T10:38:07Z

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Makei at 13:30, 10 May 2016

2016-05-10T13:30:26Z

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Makei at 13:30, 10 May 2016

2016-05-10T13:30:01Z

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	[[File:Focus_Exposure_Matrix.gif\|~~400px~~]] [[File:NILS.gif\|~~400px~~]]		[[File:Focus_Exposure_Matrix.gif\|600px]] [[File:NILS.gif\|600px]]

Makei at 13:29, 10 May 2016

2016-05-10T13:29:35Z

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Makei at 13:29, 10 May 2016

2016-05-10T13:29:06Z

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Makei at 13:28, 10 May 2016

2016-05-10T13:28:22Z

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	[[~~image~~:Focus_Exposure_Matrix.gif\|~~600px~~]]		[[File:Focus_Exposure_Matrix.gif\|400px]]

	[[image:NILS.gif\|600px]]		[[image:NILS.gif\|600px]]