Specific Process Knowledge/Lithography/DUVStepperLithography/DUVStepper - Revision history

Mmat: /* DUV Stepper */

2025-06-03T09:49:02Z

DUV Stepper

← Older revision		Revision as of 11:49, 3 June 2025
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	'''The user manual(s), quality control procedure(s) and results and contact information can be found ~~in LabManager:'''~~		'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]'''.
	~~Equipment info~~ in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]

	===Process information===		===Process information===

Jehem: /* Equipment performance and process related parameters */

2023-02-03T12:35:35Z

Equipment performance and process related parameters

Jehem: /* Process information */

2023-02-03T11:33:27Z

Process information

← Older revision		Revision as of 13:33, 3 February 2023
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	===Process information===		===Process information===
	*[[/Optimization and Simulation\|Optimization and Simulation]]		*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization and Simulation\|Optimization and Simulation]]
	*[[/Reticle Design\|Reticle Design]]		*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle Design\|Reticle Design]]
	*[[/Process Instructions\|Process Instructions]]		*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process Instructions\|Process Instructions]]

	===Equipment performance and process related parameters===		===Equipment performance and process related parameters===

Jehem: Created page with "==DUV Stepper== DUV Stepper is placed in F-3 '''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]''' The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and..."

2023-02-03T11:32:35Z

Created page with "==DUV Stepper== 300x300px|right|thumb|DUV Stepper is placed in F-3 '''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]''' The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and..."

New page

==DUV Stepper==

[[Image:stepper_image_1.jpg|300x300px|right|thumb|DUV Stepper is placed in F-3]]

'''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]'''

The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.

The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; σ =0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).

'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]

===Process information===
*[[/Optimization and Simulation|Optimization and Simulation]]
*[[/Reticle Design|Reticle Design]]
*[[/Process Instructions|Process Instructions]]

===Equipment performance and process related parameters===

{| border="2" cellspacing="0" cellpadding="2"

!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Exposure system designed for mass/production of devices with linewidth down to 250nm
|-

!style="background:silver; color:black" align="center" valign="center" rowspan="9"|Specifications
|style="background:LightGrey; color:black"|Magnification
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1:5
|-
|style="background:LightGrey; color:black"|Projection lens Numerical Aperture
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
0,4 - 0,60
|-
|style="background:LightGrey; color:black"|Illumination system's σ
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
0,2 - 0,75 (standard illumination mode: σ = 0,65)
|-
|style="background:LightGrey; color:black"|Exposure source
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
KrF laser
|-
|style="background:LightGrey; color:black"|Wavelength
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
248nm
|-
|style="background:LightGrey; color:black"|Illumination intensity
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
2800 W/m<sup>2</sup>
|-
|style="background:LightGrey; color:black"|Illumination uniformity
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1,2%
|-
|style="background:LightGrey; color:black"|Maximum printed field size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
22 x 26 mm (maximum on wafer)
|-
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
3 sigma = 50 nm
|-

!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*100 mm wafers (in trays)
*150 mm wafers
*200 mm wafers (requires tool change)
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Any standard cleanroom material
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1 - 25
|-
|}

<br clear="all" />

← Older revision		Revision as of 14:35, 3 February 2023
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	===Equipment performance and process related parameters===		===Equipment performance and process related parameters===

	{\| border="2" cellspacing="0" cellpadding="2"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

			!style="background:silver; color:black;" width="60"\|Purpose

	!style="background:silver; color:black;~~" align="center~~" width="60"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	\|style="background:WhiteSmoke; color:black" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
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	\|-		\|-

	!style="background:silver; color:black~~" align="center~~" valign="center" rowspan="9"\|Specifications		!style="background:silver; color:black" valign="center" rowspan="9"\|Specifications
	\|style="background:LightGrey; color:black"\|Magnification		\|style="background:LightGrey; color:black"\|Magnification
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	1:5		1:5
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Projection lens Numerical Aperture		\|style="background:LightGrey; color:black"\|Projection lens Numerical Aperture
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	0,4 - 0,60		0,4 - 0,60
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Illumination system's σ		\|style="background:LightGrey; color:black"\|Illumination system's σ
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	0,2 - 0,75 (standard illumination mode: σ = 0,65)		0,2 - 0,75 (standard illumination mode: σ = 0,65)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Exposure source		\|style="background:LightGrey; color:black"\|Exposure source
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	KrF laser		KrF laser
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Wavelength		\|style="background:LightGrey; color:black"\|Wavelength
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	248nm		248nm
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Illumination intensity		\|style="background:LightGrey; color:black"\|Illumination intensity
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	2800 W/m<sup>2</sup>		2800 W/m<sup>2</sup>
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Illumination uniformity		\|style="background:LightGrey; color:black"\|Illumination uniformity
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	1,2%		1,2%
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Maximum printed field size		\|style="background:LightGrey; color:black"\|Maximum printed field size
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	22 x 26 mm (maximum on wafer)		22 x 26 mm (maximum on wafer)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Alignment accuracy		\|style="background:LightGrey; color:black"\|Alignment accuracy
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	3 sigma = 50 nm		3 sigma = 50 nm
	\|-		\|-

	!style="background:silver; color:black~~" align="center~~" valign="center" rowspan="3"\|Substrates		!style="background:silver; color:black" valign="center" rowspan="3"\|Substrates
	\|style="background:LightGrey; color:black"\|Substrate size		\|style="background:LightGrey; color:black"\|Substrate size
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	*100 mm wafers (in trays)		*100 mm wafers (in trays)
	*150 mm wafers		*150 mm wafers
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	\|-		\|-
	\| style="background:LightGrey; color:black"\|Allowed materials		\| style="background:LightGrey; color:black"\|Allowed materials
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	*Any standard cleanroom material		*Any standard cleanroom material
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Batch		\|style="background:LightGrey; color:black"\|Batch
	\|style="background:WhiteSmoke; color:black~~" align="center~~" colspan="2"\|		\|style="background:WhiteSmoke; color:black" colspan="2"\|
	1 - 25		1 - 25
	\|-		\|-