Specific Process Knowledge/Lithography/DUVStepperLithography - Revision history

Jehem at 12:44, 10 May 2023

2023-05-10T12:44:15Z

← Older revision		Revision as of 14:44, 10 May 2023
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	{{~~:Specific Process Knowledge/Lithography/authors_generic~~}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography click here]'''

Jehem at 11:32, 3 February 2023

2023-02-03T11:32:28Z

← Older revision		Revision as of 13:32, 3 February 2023
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	{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}		{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}

	{{:Specific Process Knowledge/Lithography//DUVStepperLithography/DUVStepper}}		{{:Specific Process Knowledge/Lithography/DUVStepperLithography/DUVStepper}}

	{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}		{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}

Jehem at 11:31, 3 February 2023

2023-02-03T11:31:16Z

← Older revision		Revision as of 13:31, 3 February 2023
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	{{:Specific Process Knowledge/Lithography//DUVStepperLithography/DUVStepper}}		{{:Specific Process Knowledge/Lithography//DUVStepperLithography/DUVStepper}}


	~~==DUV Stepper==~~

	~~[[Image:stepper_image_1.jpg\|300x300px\|right\|thumb\|DUV Stepper is placed in F-3]]~~


	'''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]'''

	The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.

	The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; σ =0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).


	~~'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''~~
	~~Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]~~

	~~===Process information===~~
	*[[/Optimization and Simulation\|Optimization and Simulation]]
	*[[/Reticle Design\|Reticle Design]]
	*[[/Process Instructions\|Process Instructions]]

	~~===Equipment performance and process related parameters===~~

	~~{\| border="2" cellspacing="0" cellpadding="2"~~



	~~!style="background:silver; color:black;" align="center" width="60"\|Purpose~~
	~~\|style="background:LightGrey; color:black"\|~~
	~~\|style="background:WhiteSmoke; color:black" colspan="2"\|~~
	~~Exposure system designed for mass/production of devices with linewidth down to 250nm~~
	\|-

	~~!style="background:silver; color:black" align="center" valign="center" rowspan="9"\|Specifications~~
	~~\|style="background:LightGrey; color:black"\|Magnification~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~1:5~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Projection lens Numerical Aperture~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~0,4 - 0,60~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Illumination system's σ~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~0,2 - 0,75 (standard illumination mode: σ = 0,65)~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Exposure source~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~KrF laser~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Wavelength~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~248nm~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Illumination intensity~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~2800 W/m<sup>2</sup>~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Illumination uniformity~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~1,2%~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Maximum printed field size~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~22 x 26 mm (maximum on wafer)~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Alignment accuracy~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~3 sigma = 50 nm~~
	\|-

	~~!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Substrates~~
	~~\|style="background:LightGrey; color:black"\|Substrate size~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	*100 mm wafers (in trays)
	*150 mm wafers
	*200 mm wafers (requires tool change)
	\|-
	~~\| style="background:LightGrey; color:black"\|Allowed materials~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	*Any standard cleanroom material
	\|-
	~~\|style="background:LightGrey; color:black"\|Batch~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~1 - 25~~
	\|-
	\|}

	~~<br clear="all" />~~

	{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}		{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}

Jehem at 11:31, 3 February 2023

2023-02-03T11:31:02Z

← Older revision		Revision as of 13:31, 3 February 2023
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	{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}		{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}

			{{:Specific Process Knowledge/Lithography//DUVStepperLithography/DUVStepper}}


	==DUV Stepper==		==DUV Stepper==

	[[Image:stepper_image_1.jpg\|300x300px\|right\|thumb\|DUV Stepper is placed in F-3]]		[[Image:stepper_image_1.jpg\|300x300px\|right\|thumb\|DUV Stepper is placed in F-3]]


	'''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]'''		'''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]'''

Jehem: /* =Equipment performance and process related parameters= */

2023-02-03T11:28:58Z

=Equipment performance and process related parameters=

← Older revision		Revision as of 13:28, 3 February 2023
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	*[[/Process Instructions\|Process Instructions]]		*[[/Process Instructions\|Process Instructions]]

	== =Equipment performance and process related parameters===		===Equipment performance and process related parameters===

	{\| border="2" cellspacing="0" cellpadding="2"		{\| border="2" cellspacing="0" cellpadding="2"

Jehem: /* DUV Stepper */

2023-02-03T11:28:50Z

DUV Stepper

← Older revision		Revision as of 13:28, 3 February 2023
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	{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}		{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}

	=DUV Stepper=		==DUV Stepper==

	[[Image:stepper_image_1.jpg\|300x300px\|right\|thumb\|DUV Stepper is placed in F-3]]		[[Image:stepper_image_1.jpg\|300x300px\|right\|thumb\|DUV Stepper is placed in F-3]]
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	Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]		Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]

	==Process information==		===Process information===
	*[[/Optimization and Simulation\|Optimization and Simulation]]		*[[/Optimization and Simulation\|Optimization and Simulation]]
	*[[/Reticle Design\|Reticle Design]]		*[[/Reticle Design\|Reticle Design]]
	*[[/Process Instructions\|Process Instructions]]		*[[/Process Instructions\|Process Instructions]]

	== Equipment performance and process related parameters ==		== =Equipment performance and process related parameters===

	{\| border="2" cellspacing="0" cellpadding="2"		{\| border="2" cellspacing="0" cellpadding="2"

Jehem at 09:13, 31 January 2023

2023-01-31T09:13:09Z

← Older revision		Revision as of 11:13, 31 January 2023
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	[[Category: Equipment \|Lithography exposure]]		{{:Specific Process Knowledge/Lithography/authors_generic}}

			'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography click here]'''

			[[Category: Equipment\|Lithography exposure]]
	[[Category: Lithography\|Exposure]]		[[Category: Lithography\|Exposure]]

			__TOC__

	{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}		{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}

Jehem at 15:31, 30 January 2023

2023-01-30T15:31:21Z

← Older revision		Revision as of 17:31, 30 January 2023
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	[[Category: Equipment \|Lithography exposure]]		[[Category: Equipment \|Lithography exposure]]
	[[Category: Lithography\|Exposure]]		[[Category: Lithography\|Exposure]]

			{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}

	=DUV Stepper=		=DUV Stepper=
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	<br clear="all" />		<br clear="all" />

	~~{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}~~

	{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}		{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}

Jehem at 09:59, 30 January 2023

2023-01-30T09:59:03Z

Show changes

Jehem at 09:53, 30 January 2023

2023-01-30T09:53:34Z

← Older revision		Revision as of 11:53, 30 January 2023
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	<br clear="all" />		<br clear="all" />

	~~=Developer: TMAH Stepper =~~		{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
	~~[[Image:SUSS_DEV.JPG\|300x300px\|right\|thumb\|The Developer-TMAH-Stepper is placed in F-3]]~~

	This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.

	~~'''The user manual and contact information can be found in LabManager:'''~~
	~~Equipment info in [http~~:~~//labmanager.dtu.dk/function.php?module=Machine&view=view&mach=328 LabManager]~~

	~~<br clear="all" />~~
	==Process ~~information==~~
	~~[[Image:140 250 nm tilt22 (1).jpg\|350x350px\|right\|thumb\|The SEM picture of 250 nm pillars and lines. Exposure dose is 140 J~~/~~m2.]]~~
	~~The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact~~ Lithography ~~team, who will consult you and run your wafers together with you.~~

	~~Here you can find a [[media:250nm_ines_and_pillars_after_developing_i_60sec.pdf\| chart‎]] demonstrating a dependence between 250 nm line width~~/~~pillars diameter and exposure dose.~~

	~~===Standard processes===~~

	~~Post-exposure bake sequences:~~
	*'''(1000) DCH PEB 130C 60s''' 60s baking at 130°C; 20s cooling
	*'''(1001) DCH PEB 130C 90s''' 90s baking at 130°C; 20s cooling

	Development ~~sequences:~~
	*'''(1004) DCH DEV 60s''' 60s single puddle development

	~~Combined PEB and development sequences:~~
	*'''(1002) DCH PEB_60s and DEV_60s''' 60s baking at 130°C followed by 60s single puddle development
	*'''(1003) DCH PEB_90s and DEV_60s''' 90s baking at 130°C followed by 60s single puddle development

	~~The standard developer process consists of:~~
	*pre-wetting with water (2.5s @ 1000rpm)
	*developer dispense (2.5s @ 40rpm, corresponding to ~9ml)
	*development (60s @ 0rpm)
	*water rinse with BSR (5s @ 3000rpm)
	*nitrogen drying (7s @ 4000rpm)
	~~and has a cycle time of ~2 minutes~~

	~~<br clear="all"~~ />

	~~== Equipment performance and process related parameters ==~~

	~~{\| border="2" cellspacing="0" cellpadding="2"~~

	~~!style="background:silver; color:black;" align="center" width="60"\|Purpose~~
	~~\|style="background:LightGrey; color:black"\|~~
	~~\|style="background:WhiteSmoke; color:black" colspan="2"\|~~
	~~Development of DUV resist: KRF M230Y and KRF M35G~~
	\|-

	~~!style="background:silver; color:black;" align="center" width="60"\|Developer~~
	~~\|style="background:LightGrey; color:black"\|~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~2,38% water based TMAH~~
	\|-
	~~!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameters~~
	~~\|style="background:LightGrey; color:black"\|Spin speed~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~10 - 5000 rpm~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Spin acceleration~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~100 - 10000 rpm/s~~
	\|-
	~~\|style="background:LightGrey; color:black"\|Hotplate temperature~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~130°C for post exposure baking~~
	\|-

	~~!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Substrates~~
	~~\|style="background:LightGrey; color:black"\|Substrate size~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	*100 mm wafers
	*150 mm wafers
	*200 mm wafers (requires tool change)
	\|-
	~~\| style="background:LightGrey; color:black"\|Allowed materials~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	*Any standard cleanroom material
	\|-
	~~\|style="background:LightGrey; color:black"\|Batch~~
	~~\|style="background:WhiteSmoke; color:black" align="center" colspan="2"\|~~
	~~1 - 25~~
	\|-
	\|}
	~~<br clear="all" />~~