Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing - Revision history

Taran at 11:23, 20 April 2026

2026-04-20T11:23:09Z

← Older revision		Revision as of 13:23, 20 April 2026
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	{{~~:Specific Process Knowledge/Lithography/authors_generic~~}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing click here]'''

Taran: /* AZ MiR 701 (29cps) coating */

2025-01-09T08:29:58Z

AZ MiR 701 (29cps) coating

← Older revision		Revision as of 10:29, 9 January 2025
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	\|7/1 2025		\|7/1 2025
	\|taran		\|taran
	\|Old sequence (proximity bake by mistake).		\|Old sequence (proximity bake and only 60s by mistake).
	4" wafer, with HMDS. 9 points on one wafer, exclusion zone 5mm		4" wafer, with HMDS. 9 points on one wafer, exclusion zone 5mm
	\|-		\|-

Taran: /* AZ MiR 701 (29cps) coating */

2025-01-07T13:58:48Z

AZ MiR 701 (29cps) coating

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 |taran
 |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
 |}
 ==AZ nLOF 2020 coating==

Jehem: /* HMDS priming */

2023-02-03T10:16:16Z

HMDS priming

← Older revision		Revision as of 12:16, 3 February 2023
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	Test results:		Test results:
	{\|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
	\|-		\|-

Jehem: /* HMDS priming */

2023-02-03T10:16:04Z

HMDS priming

← Older revision		Revision as of 12:16, 3 February 2023
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	Test results:		Test results:
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	\|-		\|-

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	\|}		\|}


	==AZ MiR 701 (29cps) coating==		==AZ MiR 701 (29cps) coating==

Jehem: /* Quality Control (QC) */

2023-02-02T14:15:54Z

Quality Control (QC)

← Older revision		Revision as of 16:15, 2 February 2023
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	\|		\|
	*[http://labmanager.dtu.dk/d4Show.php?id=5123&mach=359 The QC procedure for Spin Coater: Gamma UV]<br>		*[http://labmanager.dtu.dk/d4Show.php?id=5123&mach=359 The QC procedure for Spin Coater: Gamma UV] - '''requires login'''<br>
	*[http://labmanager.dtu.dk/view_binary.php?fileId=4211 The newest QC data for Spin Coater: Gamma UV]		*[http://labmanager.dtu.dk/view_binary.php?fileId=4211 The newest QC data for Spin Coater: Gamma UV] - '''requires login'''
	{\| {{table}}		{\| {{table}}
	\| align="center" \|		\| align="center" \|
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	\|-		\|-
	\|		\|
	*[http://labmanager.dtu.dk/d4Show.php?id=5123&mach=359 The QC procedure for Spin Coater: Gamma UV]<br>		*[http://labmanager.dtu.dk/d4Show.php?id=5123&mach=359 The QC procedure for Spin Coater: Gamma UV] - '''requires login'''<br>
	*[http://labmanager.dtu.dk/view_binary.php?fileId=4211 The newest QC data for Spin Coater: Gamma UV]		*[http://labmanager.dtu.dk/view_binary.php?fileId=4211 The newest QC data for Spin Coater: Gamma UV] - '''requires login'''
	{\| {{table}}		{\| {{table}}
	\| align="center" \|		\| align="center" \|

Jehem: /* Spin coating */

2023-02-02T14:15:19Z

Spin coating

← Older revision		Revision as of 16:15, 2 February 2023
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	The wafer is first centered on the spindle chuck and held in place by vacuum. If static dispense is specified in the process, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist is dispensed through the dispense arm, positioned over the center of the wafer. The resist pump administers a volume of resist which depends on the substrate size.		The wafer is first centered on the spindle chuck and held in place by vacuum. If static dispense is specified in the process, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist is dispensed through the dispense arm, positioned over the center of the wafer. The resist pump administers a volume of resist which depends on the substrate size.

	The spin-off cycle determines the thickness of the resist coating. The thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law ~~(y=k*x^-a)~~. The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.		The spin-off cycle determines the thickness of the resist coating. The thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law. The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.

	Dependent on the spin speeds used in the various steps of the spin coating, resist may creep over the edge of the wafer and onto the backside. Also, some resists tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy". This resist will contaminate the soft bake hotplate, and thus subsequent wafers with resist. In a backside rinse step, solvent administered through a nozzle to the backside of the wafer while spinning dissolves the resist and washes it away. After the rinse, a short spin dries the wafer before the soft bake. Backside rinse may be done as part of the spin-off step(s). During the backside rinse solvent inevitably creeps onto the front side of the wafer, and may remove the resist coating on the edge of the wafer. As an alternative to backside rinse, a wafer which is left dirty on the backside by the spin coat process may be soft baked in proximity in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.		Dependent on the spin speeds used in the various steps of the spin coating, resist may creep over the edge of the wafer and onto the backside. Also, some resists tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy". This resist will contaminate the soft bake hotplate, and thus subsequent wafers with resist. In a backside rinse step, solvent administered through a nozzle to the backside of the wafer while spinning dissolves the resist and washes it away. After the rinse, a short spin dries the wafer before the soft bake. Backside rinse may be done as part of the spin-off step(s). During the backside rinse solvent inevitably creeps onto the front side of the wafer, and may remove the resist coating on the edge of the wafer. As an alternative to backside rinse, a wafer which is left dirty on the backside by the spin coat process may be soft baked in proximity in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.

Jehem: /* Spin coating */

2023-02-02T13:57:35Z

Spin coating

← Older revision		Revision as of 15:57, 2 February 2023
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	*Spin-off		*Spin-off
	*Backside rinse using PGMEA		*Backside rinse using PGMEA


	The wafer is first centered on the spindle chuck and held in place by vacuum. If static dispense is specified in the process, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist is dispensed through the dispense arm, positioned over the center of the wafer. The resist pump administers a volume of resist which depends on the substrate size.		The wafer is first centered on the spindle chuck and held in place by vacuum. If static dispense is specified in the process, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist is dispensed through the dispense arm, positioned over the center of the wafer. The resist pump administers a volume of resist which depends on the substrate size.

Jehem: /* HMDS priming */

2023-02-02T13:57:29Z

HMDS priming

← Older revision		Revision as of 15:57, 2 February 2023
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	*Purging		*Purging
	*Cooling		*Cooling


	The top and bottom heaters of the VPO module are typically set to 120°C. The wafer is baked under a low vacuum (~0.35 bar) in order to heat and dehydrate the wafer before HMDS application. The HMDS is injected into the process chamber using nitrogen as a carrier gas. 10 liters per minute of dry nitrogen is bubbled through liquid HMDS before flowing into the chamber. The injection lasts until ambient pressuer is reached in the chamber. After the reaction time, the chamber is purged using nitrogen. Finally, the wafer is cooled on the cool plate.		The top and bottom heaters of the VPO module are typically set to 120°C. The wafer is baked under a low vacuum (~0.35 bar) in order to heat and dehydrate the wafer before HMDS application. The HMDS is injected into the process chamber using nitrogen as a carrier gas. 10 liters per minute of dry nitrogen is bubbled through liquid HMDS before flowing into the chamber. The injection lasts until ambient pressuer is reached in the chamber. After the reaction time, the chamber is purged using nitrogen. Finally, the wafer is cooled on the cool plate.

Jehem: /* General Process Information */

2023-02-02T13:57:20Z

General Process Information

← Older revision		Revision as of 15:57, 2 February 2023
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	*Spin coating		*Spin coating
	*Soft baking		*Soft baking


	'''Features of Spin Coater: Gamma UV'''		'''Features of Spin Coater: Gamma UV'''
	*Cassette-to-cassette wafer handling		*Cassette-to-cassette wafer handling