Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing - Revision history

Jehem at 11:24, 20 April 2026

2026-04-20T11:24:07Z

← Older revision		Revision as of 13:24, 20 April 2026
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	{{~~:Specific Process Knowledge/Lithography/authors_generic~~}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing click here]'''

Taran: /* Exposure dose and defocus */

2026-02-24T10:25:05Z

Exposure dose and defocus

← Older revision		Revision as of 12:25, 24 February 2026
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	==Exposure dose and defocus==		==Exposure dose and defocus==
	[[~~Specific Process Knowledge~~/Lithography/Resist#Aligner:_Maskless_03\|Information on UV exposure dose]]		[[Specific_Process_Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_03\|Information on UV exposure dose]]

	==Exposure mode==		==Exposure mode==

Taran at 14:24, 16 September 2025

2025-09-16T14:24:27Z

← Older revision		Revision as of 16:24, 16 September 2025
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	[[Category: Equipment\|Lithography]]		[[Category: Equipment\|Lithography]]
	[[Category: Lithography]]		[[Category: Lithography]]

	~~[[Image:DUV_wafers.jpg\|500px\|frameless\|right\|]]~~

	__TOC__		__TOC__
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	=Exposure technology=		=Exposure technology=

	Aligner: Maskless 03 is ''not'' a direct writer. In the maskless aligner, the exposure light is passed through a spatial light modulator, much like in a video projector, and projected onto the substrate, exposing a small area of the design at a time. The substrate is fully exposed by scanning the exposure field across the substrate in a succession of exposure stripes.		Aligner: Maskless 03 is ''not'' a direct laser writer. In the maskless aligner, the exposure light is passed through a spatial light modulator, much like in a video projector, and projected onto the substrate, exposing a small area of the design at a time. The substrate is fully exposed by scanning the exposure field across the substrate in a succession of exposure stripes.

	The light source is a laser diode (array) with a wavelength of 405 nm (8 W). The spatial light modulator is a digital micro-mirror device. The individual mirrors of the DMD are switched on and off in order to represent the design, and the laser is flashed on and off, in order to give the desired exposure dose. The exposure image is projected onto the substrate through a lens-system. The projected image has a pixel size of 500x500 nm on the substrate surface. The image is scanned across the substrate in stripes in order to expose the entire design. Each stripe is overlapping 2 or 5 times, depending on the chosen [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_mode\|exposure mode]]), in order to reduce light-source non-uniformity effects and stitching errors. The address grid size is 250 nm or 100 nm for Fast and High Quality exposure mode, respectively.		The light source is a laser diode (array) with a wavelength of 405 nm (8 W). The spatial light modulator is a digital micro-mirror device. The individual mirrors of the DMD are switched on and off in order to represent the design, and the laser is flashed on and off, in order to give the desired exposure dose. The exposure image is projected onto the substrate through a lens-system. The projected image has a pixel size of 500x500 nm on the substrate surface. The image is scanned across the substrate in stripes in order to expose the entire design. Each stripe is overlapping 2 or 5 times, depending on the chosen [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_mode\|exposure mode]]), in order to reduce light-source non-uniformity effects and stitching errors. The address grid size is 250 nm or 100 nm for Fast and High Quality exposure mode, respectively.

Taran: /* Process Parameters */

2023-11-19T23:23:50Z

Process Parameters

← Older revision		Revision as of 01:23, 20 November 2023
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	The correct way to determine the best dose-defocus settings is to generate a so-called Bossung plot (known from projection lithography), which plots the printed linewidth as a function of dose and defocus. From this, the most stable region of parameter space is chosen, i.e. the region where the linewidth changes the least when dose and defocus changes. Any deviation from the design linewidth may be corrected using the CD bias parameter. This typically involves SEM imaging of resist cross-sections, and quickly becomes time consuming. However, in most cases, inspection of a dose-defocus matrix (easily generated using the series exposure function) in an optical microscope will get you most of the way.		The correct way to determine the best dose-defocus settings is to generate a so-called Bossung plot (known from projection lithography), which plots the printed linewidth as a function of dose and defocus. From this, the most stable region of parameter space is chosen, i.e. the region where the linewidth changes the least when dose and defocus changes. Any deviation from the design linewidth may be corrected using the CD bias parameter. This typically involves SEM imaging of resist cross-sections, and quickly becomes time consuming. However, in most cases, inspection of a dose-defocus matrix (easily generated using the series exposure function) in an optical microscope will get you most of the way.
	<br clear="all" />		<br clear="all" />

			==Exposure dose and defocus==
			[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_03\|Information on UV exposure dose]]

	==Exposure mode==		==Exposure mode==

Jehem: /* Advanced Field alignment (TSA) */

2023-03-24T11:17:35Z

Advanced Field alignment (TSA)

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	==Advanced Field alignment (TSA)==		==Advanced Field alignment (TSA)==

	'''Overlay accuracy (spec):''' 0.~~25µm~~ (~~5x5mm~~<sup>2</sup> area)		'''Overlay accuracy (spec):''' 0.25 µm (5x5 mm<sup>2</sup> area)

	Shift, rotation, scaling, and shearing is determined and set by global alignment marks. The shift is corrected by automatic alignment to one mark in each field (chip).		Shift, rotation, scaling, and shearing is determined and set by global alignment marks. The shift is corrected by automatic alignment to one mark in each field (chip).
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	(Jehem Feb 2020)		(Jehem Feb 2020)
	\|'''X'''		\|'''X'''
	\| ~~100±55~~		\| 100 ±55
	\| ~~106±55~~		\| 106 ±55

	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	\|'''Y'''		\|'''Y'''
	\| ~~100±56~~		\| 100 ±56
	\| ~~104±56~~		\| 104 ±56

	\|}		\|}

	<br clear="all" />		<br clear="all" />

Jehem: /* Back Side Alignment */

2023-03-24T11:17:18Z

Back Side Alignment

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	'''Camera field of view (W x H):''' 640 µm x 480 µm		'''Camera field of view (W x H):''' 640 µm x 480 µm

	[[Image:MLA150_BSA_Backside.JPG\|center\|300px\|thumb\|Image of a BSA alignment mark during alignment. The mark is ~~300µm~~ wide. The blue cross-hair is ~~~18µm~~. Screenshot by Thomas Anhøj @ DTU Nanolab, 2019.]]		[[Image:MLA150_BSA_Backside.JPG\|center\|300px\|thumb\|Image of a BSA alignment mark during alignment. The mark is 300 µm wide. The blue cross-hair is ~18 µm. Screenshot by Thomas Anhøj @ DTU Nanolab, 2019.]]

Jehem: /* Back Side Alignment */

2023-03-24T11:17:00Z

Back Side Alignment

← Older revision		Revision as of 13:17, 24 March 2023
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	'''Overlay accuracy (spec):''' 1.0 µm		'''Overlay accuracy (spec):''' 1.0 µm

	'''BSA windows:''' along the X and Y axes, ~~10mm~~ x ~~46mm~~, starting 14.5 mm from the center.		'''BSA windows:''' along the X and Y axes, 10 mm x 46 mm, starting 14.5 mm from the center.

	'''Camera field of view (W x H):''' 640 µm x 480 µm		'''Camera field of view (W x H):''' 640 µm x 480 µm
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	\|- align="center"		\|- align="center"
	\| BSA marks positioned at x = ~~±20mm~~ on a 2" wafer \|\| BSA marks positioned at x = ~~±40mm~~ on a 4" wafer \|\| BSA marks positioned at x = ~~±50mm~~ on a 6" wafer		\| BSA marks positioned at x = ±20 mm on a 2" wafer \|\| BSA marks positioned at x = ±40 mm on a 100 mm wafer \|\| BSA marks positioned at x = ±50 mm on a 150 mm wafer

	\|}		\|}

Jehem: /* Back Side Alignment */

2023-03-24T11:14:41Z

Back Side Alignment

← Older revision		Revision as of 13:14, 24 March 2023
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	==Back Side Alignment==		==Back Side Alignment==

	~~[[Image~~:~~MLA150_BSA_Backside~~.~~JPG\|300x300px\|thumb\|Image of a BSA alignment mark during alignment. The mark is 300µm wide. The blue cross-hair is ~18µm. Screenshot by Thomas Anhøj @ DTU Nanolab, 2019.]]~~		'''Overlay accuracy (spec):''' 1.0 µm

	'''~~Overlay accuracy (spec)~~:''' 1.~~0µm~~		'''BSA windows:''' along the X and Y axes, 10mm x 46mm, starting 14.5 mm from the center.

	'''~~BSA windows~~:''' ~~along the X and Y axes, 10mm~~ x ~~46mm, starting 14~~.~~5mm from the~~ center.		'''Camera field of view (W x H):''' 640 µm x 480 µm

			[[Image:MLA150_BSA_Backside.JPG\|center\|300px\|thumb\|Image of a BSA alignment mark during alignment. The mark is 300µm wide. The blue cross-hair is ~18µm. Screenshot by Thomas Anhøj @ DTU Nanolab, 2019.]]

	~~'''Camera field of view (W x H):''' 640µm x 480µm~~

	The alignment marks must be placed within the BSA windows. The Overview camera only shows the top side of the substrate, and cannot be used to locate the BSA marks.		The alignment marks must be placed within the BSA windows. The Overview camera only shows the top side of the substrate, and cannot be used to locate the BSA marks.

	{\| cellpadding="2" style="border: 2px solid darkgray;" align="~~right~~"		{\| cellpadding="2" style="border: 2px solid darkgray;" align="center"
	! width="320" \|		! width="320" \|
	! width="320" \|		! width="320" \|
	! width="320" \|		! width="320" \|


	\|+'''Substrate view during backside alignment. Screenshots by Thomas Anhøj @ DTU Nanolab, 2019.'''		\|+'''Substrate view during backside alignment. Screenshots by Thomas Anhøj @ DTU Nanolab, 2019.'''

Jehem: /* Top Side Alignment */

2023-03-24T11:12:51Z

Top Side Alignment

← Older revision		Revision as of 13:12, 24 March 2023
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	To be sure the Overview camera can be used to locate the first alignment mark, it is advised to use a mark in the bottom left portion (3<sup>rd</sup> quadrant) of the design as mark 1. <br>		To be sure the Overview camera can be used to locate the first alignment mark, it is advised to use a mark in the bottom left portion (3<sup>rd</sup> quadrant) of the design as mark 1. <br>

	{\| cellpadding="2" style="border: 2px solid darkgray;" align="~~right~~"		{\| cellpadding="2" style="border: 2px solid darkgray;" align="center"
	! width="320" \|		! width="320" \|
	! width="320" \|		! width="320" \|
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	\|+'''Camera views during alignment on Aligner: Maskless 03. Screenshots by Thomas Anhøj @ DTU Nanolab, 2019.'''		\|+'''Camera views during alignment on Aligner: Maskless 03. Screenshots by Thomas Anhøj @ DTU Nanolab, 2019.'''
	\|- border="0", align="center"		\|- border="0"; align="center"
	\|[[Image:MLA150 TSA Overview.JPG\|300px]]		\|[[Image:MLA150 TSA Overview.JPG\|300px]]
	\|[[Image:MLA150_BSA_Backside.JPG\|300px]]		\|[[Image:MLA150_BSA_Backside.JPG\|300px]]

Jehem: /* Top Side Alignment */

2023-03-24T11:12:00Z

Top Side Alignment

← Older revision		Revision as of 13:12, 24 March 2023
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	\|+'''Camera views during alignment on Aligner: Maskless 03. Screenshots by Thomas Anhøj @ DTU Nanolab, 2019.'''		\|+'''Camera views during alignment on Aligner: Maskless 03. Screenshots by Thomas Anhøj @ DTU Nanolab, 2019.'''
	\|- border="0" align="center"		\|- border="0", align="center"
	\|[[Image:MLA150 TSA Overview.JPG\|300px]]		\|[[Image:MLA150 TSA Overview.JPG\|300px]]
	\|[[Image:MLA150_BSA_Backside.JPG\|300px]]		\|[[Image:MLA150_BSA_Backside.JPG\|300px]]