Specific Process Knowledge/Lithography - Revision history

Jehem: /* Lithography */

2026-06-29T09:40:34Z

Lithography

← Older revision		Revision as of 11:40, 29 June 2026
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	=Lithography=		=Lithography=
	[[file:DUV_wafers.jpg\|400px\|thumb\|right\|~~Optical gratings~~ created using DUV lithography.]]		[[file:DUV_wafers.jpg\|400px\|thumb\|right\|Waveguides created using DUV lithography.]]
	__TOC__		__TOC__

Meenadh at 08:29, 29 June 2026

2026-06-29T08:29:37Z

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 '''E-beam lithography'''<br>
-Electron-beam (e-beam) lithography is a highly precise patterning technique that uses a focused beam of electrons instead of light to define structures. It enables the fabrication of extremely small features, reaching dimensions as low as about 10 nanometers. Due to its high resolution and flexibility, it is often used for research, prototyping, and mask fabrication, although it is generally slower and more expensive than optical methods.<gallery mode="packed-hover">
+Electron-beam (e-beam) lithography is a highly precise patterning technique that uses a focused beam of electrons instead of light to define structures. It enables the fabrication of extremely small features, reaching dimensions as low as about 10 nanometers. Due to its high resolution and flexibility, it is often used for research, prototyping, and mask fabrication, although it is generally slower and more expensive than optical methods.
-File:Equipment.jpg|text1
-File:MTP image.jpg|text2
+'''Nanoimprint lithography'''<br>
 Nanoimprint lithography is a patterning technique that relies on mechanically imprinting or stamping nanoscale features onto a surface without the need for irradiation. By pressing a mold into a resist layer, it can replicate fine structures with high fidelity and at relatively low cost. This method is particularly attractive for large-area and high-throughput applications, offering a straightforward alternative to more complex lithographic processes.
 =Comparing lithography methods at DTU Nanolab=
 {| class="wikitable" width="100%"
 |-

Meenadh: /* Lithography */

2026-06-29T08:23:08Z

Lithography

@@ Line 16: / Line 16: @@
 '''E-beam lithography'''<br>
-Electron-beam (e-beam) lithography is a highly precise patterning technique that uses a focused beam of electrons instead of light to define structures. It enables the fabrication of extremely small features, reaching dimensions as low as about 10 nanometers. Due to its high resolution and flexibility, it is often used for research, prototyping, and mask fabrication, although it is generally slower and more expensive than optical methods.
+Electron-beam (e-beam) lithography is a highly precise patterning technique that uses a focused beam of electrons instead of light to define structures. It enables the fabrication of extremely small features, reaching dimensions as low as about 10 nanometers. Due to its high resolution and flexibility, it is often used for research, prototyping, and mask fabrication, although it is generally slower and more expensive than optical methods.<gallery mode="packed-hover">
 =Comparing lithography methods at DTU Nanolab=

Meenadh at 08:09, 29 June 2026

2026-06-29T08:09:53Z

@@ Line 8: / Line 8: @@
 Lithography is a technique used to transfer patterns from a physical or digital mask onto a substrate. At DTU Nanolab, four different lithography methods are available, each suited to specific applications and requirements.
 '''UV lithography'''<br>
 UV lithography is a widely used technique in microfabrication for creating patterns on a substrate using ultraviolet light. It is particularly effective for producing features down to about 1 micrometer in size, making it suitable for many conventional semiconductor and microsystem applications. The process relies on transferring patterns from a mask (physical or digital) onto a photoresist-coated surface, offering a reliable and relatively cost-effective approach for medium-resolution fabrication tasks.
-[[File:Equipment.jpg|alt=Picture of tool.|thumb|Micro transfer printer.]]
 '''DUV stepper lithography'''<br>
 Deep ultraviolet (DUV) stepper lithography is an advanced form of optical lithography designed to achieve much smaller feature sizes, typically down to around 200 nanometers. By using shorter wavelengths and precision stepper systems, it enables high-resolution patterning across wafers with excellent alignment accuracy. This method is commonly used in modern semiconductor manufacturing, where scaling down device dimensions is critical for improving performance and integration density.
@@ Line 22: / Line 20: @@
 '''Nanoimprint lithography'''<br>
 Nanoimprint lithography is a patterning technique that relies on mechanically imprinting or stamping nanoscale features onto a surface without the need for irradiation. By pressing a mold into a resist layer, it can replicate fine structures with high fidelity and at relatively low cost. This method is particularly attractive for large-area and high-throughput applications, offering a straightforward alternative to more complex lithographic processes.
 =Comparing lithography methods at DTU Nanolab=

Meenadh: /* Lithography */

2026-06-29T08:08:59Z

Lithography

← Older revision		Revision as of 10:08, 29 June 2026
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	Lithography is a technique used to transfer patterns from a physical or digital mask onto a substrate. At DTU Nanolab, four different lithography methods are available, each suited to specific applications and requirements.		Lithography is a technique used to transfer patterns from a physical or digital mask onto a substrate. At DTU Nanolab, four different lithography methods are available, each suited to specific applications and requirements.

			Test paragraph.

	'''UV lithography'''<br>		'''UV lithography'''<br>
	UV lithography is a widely used technique in microfabrication for creating patterns on a substrate using ultraviolet light. It is particularly effective for producing features down to about 1 micrometer in size, making it suitable for many conventional semiconductor and microsystem applications. The process relies on transferring patterns from a mask (physical or digital) onto a photoresist-coated surface, offering a reliable and relatively cost-effective approach for medium-resolution fabrication tasks.		UV lithography is a widely used technique in microfabrication for creating patterns on a substrate using ultraviolet light. It is particularly effective for producing features down to about 1 micrometer in size, making it suitable for many conventional semiconductor and microsystem applications. The process relies on transferring patterns from a mask (physical or digital) onto a photoresist-coated surface, offering a reliable and relatively cost-effective approach for medium-resolution fabrication tasks.
			[[File:Equipment.jpg\|alt=Picture of tool.\|thumb\|Micro transfer printer.]]
	'''DUV stepper lithography'''<br>		'''DUV stepper lithography'''<br>
	Deep ultraviolet (DUV) stepper lithography is an advanced form of optical lithography designed to achieve much smaller feature sizes, typically down to around 200 nanometers. By using shorter wavelengths and precision stepper systems, it enables high-resolution patterning across wafers with excellent alignment accuracy. This method is commonly used in modern semiconductor manufacturing, where scaling down device dimensions is critical for improving performance and integration density.		Deep ultraviolet (DUV) stepper lithography is an advanced form of optical lithography designed to achieve much smaller feature sizes, typically down to around 200 nanometers. By using shorter wavelengths and precision stepper systems, it enables high-resolution patterning across wafers with excellent alignment accuracy. This method is commonly used in modern semiconductor manufacturing, where scaling down device dimensions is critical for improving performance and integration density.
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	Nanoimprint lithography is a patterning technique that relies on mechanically imprinting or stamping nanoscale features onto a surface without the need for irradiation. By pressing a mold into a resist layer, it can replicate fine structures with high fidelity and at relatively low cost. This method is particularly attractive for large-area and high-throughput applications, offering a straightforward alternative to more complex lithographic processes.		Nanoimprint lithography is a patterning technique that relies on mechanically imprinting or stamping nanoscale features onto a surface without the need for irradiation. By pressing a mold into a resist layer, it can replicate fine structures with high fidelity and at relatively low cost. This method is particularly attractive for large-area and high-throughput applications, offering a straightforward alternative to more complex lithographic processes.
	<br clear="all" />		<br clear="all" />
			{\| class="wikitable sortable"
			!Header 1
			!
			!
			!
			\|-
			\|A
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			\|
			\|-
			\|B
			\|
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			\|-
			\|C
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			\|}

	=Comparing lithography methods at DTU Nanolab=		=Comparing lithography methods at DTU Nanolab=
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	Throughput is up to 60 wafers/hour		Throughput is up to 60 wafers/hour
	\|		\|
	Process dependent:		Process dependent:
	*Dose [µC/cm<sup>2</sup>]: <math>Q</math>		*Dose [µC/cm<sup>2</sup>]: <math>Q</math>
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	*Pattern area [cm<sup>2</sup>]: <math>a</math>		*Pattern area [cm<sup>2</sup>]: <math>a</math>

	Process time [s]: <math>t = \frac{Q \sdot a}{I}</math>		Process time [s]: <math>t = \frac{Q \sdot a}{I}</math>
	\| Process dependent, including heating/cooling rates		\| Process dependent, including heating/cooling rates
	\|-		\|-

Meenadh: /* Lithography */

2026-06-29T08:01:40Z

Lithography

← Older revision		Revision as of 10:01, 29 June 2026
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	=Lithography=		=Lithography=
	[[~~Image~~:DUV_wafers.jpg\|~~600px~~\|~~frameless~~\|right\|]]		[[file:DUV_wafers.jpg\|400px\|thumb\|right\|Optical gratings created using DUV lithography.]]
	__TOC__		__TOC__

Meenadh: /* Equipment and Process Pages */

2026-06-29T07:53:37Z

Equipment and Process Pages

← Older revision		Revision as of 09:53, 29 June 2026
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	<br>		<br>
	'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''		'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1\|Aligner: MA6-1]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1\|Aligner: MA6-1 (PFL)]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2\|Aligner: MA6-2]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2\|Aligner: MA6-2]]
	*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1\|Aligner: Maskless 01]]		*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1\|Aligner: Maskless 01]]

Jehem: /* Equipment and Process Pages */

2026-06-25T08:24:34Z

Equipment and Process Pages

Jehem: /* Equipment and Process Pages */

2026-06-25T08:13:12Z

Equipment and Process Pages

← Older revision		Revision as of 10:13, 25 June 2026
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	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04]]

	*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]		*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]

Jehem: /* Equipment and Process Pages */

2026-06-25T08:12:50Z

Equipment and Process Pages

← Older revision		Revision as of 10:12, 25 June 2026
Line 172:		Line 172:
	<br>		<br>
	'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''		'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_MA6~~-1\|Aligner: MA6-1]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1\|Aligner: MA6-1]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_MA6~~-2\|Aligner: MA6-2]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2\|Aligner: MA6-2]]
	~~<!--~~*[[Specific Process Knowledge/Lithography/UVExposure~~#Inclined UV lamp\|Inclined UV-lamp]]-->~~		*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1\|Aligner: Maskless 01]]
	*[[Specific Process Knowledge/~~Lithography/UVExposure#Aligner: Maskless 01~~\|Aligner: Maskless 01]]		*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2\|Aligner: Maskless 02]]
	*[[Specific Process Knowledge/Lithography/UVExposure~~#Aligner: Maskless 02~~\|Aligner: Maskless 02]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_Maskless_03~~\|Aligner: Maskless 03]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_Maskless_04~~\|Aligner: Maskless 04]]

	*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]		*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]

← Older revision		Revision as of 09:53, 29 June 2026
Line 173:		Line 173:
	<br>		<br>
	'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''		'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1\|Aligner: MA6-1]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1\|Aligner: MA6-1 (PFL)]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2\|Aligner: MA6-2]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2\|Aligner: MA6-2]]
	*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1\|Aligner: Maskless 01]]		*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1\|Aligner: Maskless 01]]

← Older revision		Revision as of 10:13, 25 June 2026
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	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04]]

	*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]		*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]

← Older revision		Revision as of 10:12, 25 June 2026
Line 172:		Line 172:
	<br>		<br>
	'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''		'''[[Specific Process Knowledge/Lithography/UVExposure\|UV Exposure Tools]]'''
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_MA6~~-1\|Aligner: MA6-1]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1\|Aligner: MA6-1]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_MA6~~-2\|Aligner: MA6-2]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2\|Aligner: MA6-2]]
	~~<!--~~*[[Specific Process Knowledge/Lithography/UVExposure~~#Inclined UV lamp\|Inclined UV-lamp]]-->~~		*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1\|Aligner: Maskless 01]]
	*[[Specific Process Knowledge/~~Lithography/UVExposure#Aligner: Maskless 01~~\|Aligner: Maskless 01]]		*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2\|Aligner: Maskless 02]]
	*[[Specific Process Knowledge/Lithography/UVExposure~~#Aligner: Maskless 02~~\|Aligner: Maskless 02]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_Maskless_03~~\|Aligner: Maskless 03]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure~~#Aligner:_Maskless_04~~\|Aligner: Maskless 04]]

	*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]		*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]

← Older revision		Revision as of 10:24, 25 June 2026
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	<br>		<br>
	'''[[Specific Process Knowledge/Lithography/Coaters\|Automatic spin coating]]'''		'''[[Specific Process Knowledge/Lithography/Coaters\|Automatic spin coating]]'''
	*[[Specific_Process_Knowledge/Lithography/Coaters~~#Spin_Coater:_Gamma_UV~~\|Spin Coater: Gamma UV]]		*[[Specific_Process_Knowledge/Lithography/Coaters/GammaUV\|Spin Coater: Gamma UV]]
	*[[Specific Process Knowledge/Lithography/~~DUVStepperLithography#SÜSS Spinner-Stepper~~\|Spin Coater: Süss Stepper]]		*[[Specific Process Knowledge/Lithography/Coaters/GammaDUV\|Spin Coater: Süss Stepper]]
	*[[Specific_Process_Knowledge/Lithography/Coaters~~#Spin_Coater:_Gamma_E-beam_and_UV~~\|Spin Coater: Gamma e-beam & UV]]		*[[Specific_Process_Knowledge/Lithography/Coaters/GammaEbeam\|Spin Coater: Gamma e-beam & UV]]

	'''[[Specific Process Knowledge/Lithography/Coaters\|Manual spin coating]]'''		'''[[Specific Process Knowledge/Lithography/Coaters\|Manual spin coating]]'''
	*[[Specific Process Knowledge/Lithography/Coaters~~#Spin_Coater:_RCD8~~\|Spin Coater: RCD8]]		*[[Specific Process Knowledge/Lithography/Coaters/RCD8\|Spin Coater: RCD8]]
	*[[Specific_Process_Knowledge/Lithography/Coaters~~#Spin_coater:_Labspin~~\|Spin Coater: Labspin 02/03]]		*[[Specific_Process_Knowledge/Lithography/Coaters/labspin\|Spin Coater: Labspin 02/03]]
			*[[Specific_Process_Knowledge/Lithography/Coaters/labspin04\|Spin Coater: Labspin 04 (PFL)]]

	'''[[Specific Process Knowledge/Lithography/Coaters\|Spray coating]]'''		'''[[Specific Process Knowledge/Lithography/Coaters\|Spray coating]]'''
	*[[Specific_Process_Knowledge/Lithography/Coaters~~#Spray_Coater~~\|Spray Coater]]		*[[Specific_Process_Knowledge/Lithography/Coaters/sprayCoater\|Spray Coater]]

	'''[[Specific Process Knowledge/Lithography/Baking\|Soft & hard baking]]'''		'''[[Specific Process Knowledge/Lithography/Baking\|Soft & hard baking]]'''
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	*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2\|Aligner: Maskless 02]]		*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2\|Aligner: Maskless 02]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3\|Aligner: Maskless 03]]
	*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04]]		*[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4\|Aligner: Maskless 04 (PFL)]]
	*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]		*[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA\|Mask Aligner vs Maskless Aligner]]