Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF) - Revision history

Mbec: /* Comparing different 40% HF baths */

2025-04-24T11:25:48Z

Comparing different 40% HF baths

← Older revision		Revision as of 13:25, 24 April 2025
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	<br clear="all" />		<br clear="all" />

	==~~Comparing different~~ 40% HF ~~baths~~==		==40% HF==
	{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="2" style="text-align:left;"
	\|-		\|-

	\|-style="background:silver; color:black"		\|-style="background:silver; color:black"
	!		!
	! 40% HF ~~PP-bath~~		! 40% HF in Plastic beaker, only done by Nanolab staff
	~~! 40% HF~~ Plastic beaker

	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Batch size!		!Batch size!
	~~\|1-25 wafers at a time~~
	\|1 wafer at a time		\|1 wafer at a time
	\|-		\|-
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	!Size of substrate		!Size of substrate
	~~\|Any that fits to a dedicated holder~~
	\|Any that fits to a dedicated holder		\|Any that fits to a dedicated holder
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Allowed materials		!Allowed materials
	~~\|All materials~~
	\|All materials		\|All materials
	\|-		\|-

Mbec: /* Comparing different HF baths */

2025-04-24T11:17:53Z

Comparing different HF baths

← Older revision		Revision as of 13:17, 24 April 2025
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	!		!
	! 1% HF in RCA Bench		! 1% HF in RCA Bench
	! 1% HF ~~PP-bath~~		! 10% HF in D3 wet bench 5 (Oxide etch 3)
	! 1% HF Plastic beaker		! 1% HF Plastic beaker

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	!Size of substrate		!Size of substrate
	\|2"-6" wafers		\|2"-6" wafers
	\|2"- 4" wafers or any that fits in a dedicated holder		\|2"- 6" wafers or any that fits in a dedicated holder
	\|2"- 4" wafers or any that fits in a dedicated holder		\|2"- 4" wafers or any that fits in a dedicated holder
	\|-		\|-

Mbec: /* Wet Silicon Oxide Etch (BHF, HF and BOE 7:1 Etchant VLSI with Surfactant (wetting agent)) */

2025-04-24T11:10:26Z

Wet Silicon Oxide Etch (BHF, HF and BOE 7:1 Etchant VLSI with Surfactant (wetting agent))

← Older revision		Revision as of 13:10, 24 April 2025
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	'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]		'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]

	'''Working with HF above 13% is only allowed by Nanolab staff'''		'''<big>Working with HF above 13% is only allowed by Nanolab staff</big>'''

	<!-- remember to remove the type of documents that are not present -->		<!-- remember to remove the type of documents that are not present -->
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	*Mainly for removing native oxide		*Mainly for removing native oxide
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Mainly for etching deep into borofloat or quartz wafers		*Mainly for etching deep into borofloat or quartz wafers. '''Only Nanolab staff are allowed to work with this HF'''.
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Etching of silicon oxide - especially for etching small holes		*Etching of silicon oxide - especially for etching small holes

Mbec at 11:06, 24 April 2025

2025-04-24T11:06:42Z

← Older revision		Revision as of 13:06, 24 April 2025
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	'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]		'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]

			'''Working with HF above 13% is only allowed by Nanolab staff'''

	<!-- remember to remove the type of documents that are not present -->		<!-- remember to remove the type of documents that are not present -->

Kabi at 13:38, 10 September 2024

2024-09-10T13:38:29Z

← Older revision		Revision as of 15:38, 10 September 2024
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	'''The user manual for Oxide etch 2: BHF (clean), APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=378 by clicking here]		'''The user manual for Oxide etch 2: BHF (clean), APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=378 by clicking here]

			'''The user manual for Oxide etch 3: 10% HF, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=380 by clicking here]

	'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]		'''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]
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	<gallery caption="Different places to do wet silicon oxide etch" widths="420px" heights="425px" perrow="5"> image:BHF clean.JPG\|BHF in wetbench 04 in D-3 (Oxide etch 2: BHF (clean)). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.		<gallery caption="Different places to do wet silicon oxide etch" widths="420px" heights="425px" perrow="5"> image:BHF clean.JPG\|BHF in wetbench 04 in D-3 (Oxide etch 2: BHF (clean)). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.
	image:KOH_BHF.JPG\|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF). The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.		image:KOH_BHF.JPG\|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF). The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.
			image:BHF clean.JPG\|BHF in wetbench 05 in D-3 (Oxide etch 3: 10% HF). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF, BHF with wetting agent or 40% HF on request. This bath is also used for cleaning quarts carriers from the PECVD4 system.
	image:RCA-HF.jpg\|HF baths in RCA bench in B-1. These may only be used together with RCA cleaning and furnace processes.		image:RCA-HF.jpg\|HF baths in RCA bench in B-1. These may only be used together with RCA cleaning and furnace processes.
	</gallery>		</gallery>

Kabi at 13:31, 10 September 2024

2024-09-10T13:31:12Z

← Older revision		Revision as of 15:31, 10 September 2024
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	<br clear="all" />		<br clear="all" />

	<gallery caption="Different places to do wet silicon oxide etch" widths="~~220px~~" heights="~~225px~~" perrow="5"> image:BHF clean.JPG\|BHF ~~clean~~ wetbench 04 in D-3. Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.		<gallery caption="Different places to do wet silicon oxide etch" widths="420px" heights="425px" perrow="5"> image:BHF clean.JPG\|BHF in wetbench 04 in D-3 (Oxide etch 2: BHF (clean)). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.
	image:KOH_BHF.JPG\|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF.) The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.		image:KOH_BHF.JPG\|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF). The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.
	image:RCA-HF.jpg\|HF baths in RCA bench in B-1.		image:RCA-HF.jpg\|HF baths in RCA bench in B-1. These may only be used together with RCA cleaning and furnace processes.
	~~image:Stinkskab RR2.jpg\|The HF bath in 'Fume hood(RCA)' in cleanroom B-1 is~~ only ~~for use during special~~ RCA cleaning processes ~~inside the fume hood~~. </gallery>		</gallery>

Hvje: /* Comparing different HF baths */

2024-03-08T13:02:10Z

Comparing different HF baths

← Older revision		Revision as of 15:02, 8 March 2024
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	!		!
	! 1% HF in RCA Bench		! 1% HF in RCA Bench
	! 1~~% / 5~~% HF PP-bath		! 1% HF PP-bath
	! 1~~% / 5~~% HF Plastic beaker		! 1% HF Plastic beaker

	\|-		\|-

Hvje: /* Comparing different HF baths */

2024-03-08T13:01:35Z

Comparing different HF baths

← Older revision		Revision as of 15:01, 8 March 2024
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	\|-style="background:silver; color:black"		\|-style="background:silver; color:black"
	!		!
	! 5% HF in RCA Bench		! 1% HF in RCA Bench
	! 1% / 5% HF PP-bath		! 1% / 5% HF PP-bath
	! 1% / 5% HF Plastic beaker		! 1% / 5% HF Plastic beaker

Hvje: /* Wet Silicon Oxide Etch (BHF, HF and BOE 7:1 Etchant VLSI with Surfactant (wetting agent)) */

2023-11-14T10:37:05Z

Wet Silicon Oxide Etch (BHF, HF and BOE 7:1 Etchant VLSI with Surfactant (wetting agent))

← Older revision		Revision as of 12:37, 14 November 2023
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	!colspan="2" border="none" style="background:silver; color:black;" align="center"\|Etchant		!colspan="2" border="none" style="background:silver; color:black;" align="center"\|Etchant
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_BHF_baths\|BHF]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_BHF_baths\|BHF]]</b>
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths\|1% / 5% HF]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths\|1% HF / 5% HF / 10% HF]]</b>
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_40.25_HF_baths\|40% HF]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_40.25_HF_baths\|40% HF]]</b>
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#SiO_etch_bath\|BOE 7:1 Etchant VLSI with Surfactant]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#SiO_etch_bath\|BOE 7:1 Etchant VLSI with Surfactant]]</b>
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	*Wet thermal oxide:75-80nm/min		*Wet thermal oxide:75-80nm/min
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%)		*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%) / 52nm/min(10%)
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Boronfloat and quartz: ~3-4 μm/min		*Boronfloat and quartz: ~3-4 μm/min

Mbec at 12:07, 7 August 2023

2023-08-07T12:07:07Z

← Older revision		Revision as of 14:07, 7 August 2023
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	\|style="background:LightGrey; color:black"\|Link to safety APV and SDS (You must be logged in to Kemibrug to view SDSs)		\|style="background:LightGrey; color:black"\|Link to safety APV and SDS (You must be logged in to Kemibrug to view SDSs)
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*:[http://labmanager.~~danchip~~.dtu.dk/d4Show.php?id=1897&mach=64 see APV here]		*:[http://labmanager.nanolab.dtu.dk/d4Show.php?id=1897&mach=64 see APV here]
	*:[https://kemibrug.dk/Kemikalier/Action?id=RCU2MHolYzIlODIlN2UlYzIlODB2JWMyJTgxJTdleiVjMiU4N0RZeiVjMiU4OXYlN2UlYzIlODElYzIlODhESkhKSUxMVGQlYzIlODclN2N2JWMyJTgzJTdlJWMyJTg4diVjMiU4OSU3ZSVjMiU4NCVjMiU4MyVjMiU4OCU1ZVlSSQ==#K see SDS here]		*:[https://kemibrug.dk/Kemikalier/Action?id=RCU2MHolYzIlODIlN2UlYzIlODB2JWMyJTgxJTdleiVjMiU4N0RZeiVjMiU4OXYlN2UlYzIlODElYzIlODhESkhKSUxMVGQlYzIlODclN2N2JWMyJTgzJTdlJWMyJTg4diVjMiU4OSU3ZSVjMiU4NCVjMiU4MyVjMiU4OCU1ZVlSSQ==#K see SDS here]
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
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	*Wet thermal oxide:75-80nm/min		*Wet thermal oxide:75-80nm/min
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Wet thermal oxide:~25nm/min		*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%)
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Boronfloat and quartz: ~3-4 μm/min		*Boronfloat and quartz: ~3-4 μm/min
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	*BHF (12%HF with Ammoniumflouride)		*BHF (12%HF with Ammoniumflouride)
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*5% HF		*1% / 5% HF
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*40% HF		*40% HF
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	image:KOH_BHF.JPG\|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF.) The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.		image:KOH_BHF.JPG\|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF.) The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.
	image:RCA-HF.jpg\|HF baths in RCA bench in B-1.		image:RCA-HF.jpg\|HF baths in RCA bench in B-1.
	image:Stinkskab RR2.jpg\|The 5% HF bath in 'Fume hood(RCA)' in cleanroom B-1 is only for use during special RCA cleaning processes inside the fume hood. </gallery>		image:Stinkskab RR2.jpg\|The HF bath in 'Fume hood(RCA)' in cleanroom B-1 is only for use during special RCA cleaning processes inside the fume hood. </gallery>


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	<br clear="all" />		<br clear="all" />

	==Comparing different 5% HF baths==		==Comparing different HF baths==
	{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
	\|-		\|-
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	!		!
	! 5% HF in RCA Bench		! 5% HF in RCA Bench
	! 5% HF PP-bath		! 1% / 5% HF PP-bath
	! 5% HF Plastic beaker		! 1% / 5% HF Plastic beaker

	\|-		\|-

← Older revision		Revision as of 12:37, 14 November 2023
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	!colspan="2" border="none" style="background:silver; color:black;" align="center"\|Etchant		!colspan="2" border="none" style="background:silver; color:black;" align="center"\|Etchant
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_BHF_baths\|BHF]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_BHF_baths\|BHF]]</b>
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths\|1% / 5% HF]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths\|1% HF / 5% HF / 10% HF]]</b>
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_40.25_HF_baths\|40% HF]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_40.25_HF_baths\|40% HF]]</b>
	\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#SiO_etch_bath\|BOE 7:1 Etchant VLSI with Surfactant]]</b>		\|style="background:WhiteSmoke; color:black"\|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#SiO_etch_bath\|BOE 7:1 Etchant VLSI with Surfactant]]</b>
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	*Wet thermal oxide:75-80nm/min		*Wet thermal oxide:75-80nm/min
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%)		*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%) / 52nm/min(10%)
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Boronfloat and quartz: ~3-4 μm/min		*Boronfloat and quartz: ~3-4 μm/min