Specific Process Knowledge/Etch/Wet Silicon Nitride Etch - Revision history

Hvje: Only spelling

2025-07-31T07:14:59Z

Only spelling

← Older revision		Revision as of 09:14, 31 July 2025
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	[[Category: Equipment\|Etch Wet silicon nitride]]		[[index.php?title=Category:Equipment\|Etch Wet silicon nitride]]
	[[Category: Etch (Wet) bath\|Silicon Nitride]]		[[index.php?title=Category:Etch (Wet) bath\|Silicon Nitride]]

	[[Image:Nitrideetch.JPG\|300x300px\|thumb\|The 'Nitride etch' bath is placed inside 'Wet bench 02: Nitride ethc' in Cleanroom D-3]]		[[Image:Nitrideetch.JPG\|300x300px\|thumb\|The 'Nitride etch' bath is placed inside 'Wet bench 02: Nitride ethc' in Cleanroom D-3]]
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	Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.		Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.

	The etch solution is initially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - ca. 160°C.		The etch solution is initially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - approx. 160°C.

Kabi at 12:21, 6 February 2023

2023-02-06T12:21:32Z

← Older revision		Revision as of 14:21, 6 February 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''

	'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''		'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''

Hvje at 12:59, 31 January 2023

2023-01-31T12:59:28Z

← Older revision		Revision as of 14:59, 31 January 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''

			'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''

			'''All links to Kemibrug (SDS) and Labmanager Including APV requires login.'''

			'''All measurements on this page has been made by Nanolab staff.'''


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	[[Image:Nitrideetch.JPG\|300x300px\|thumb\|The 'Nitride etch' bath is placed inside 'Wet bench 02: Nitride ethc' in Cleanroom D-3]]		[[Image:Nitrideetch.JPG\|300x300px\|thumb\|The 'Nitride etch' bath is placed inside 'Wet bench 02: Nitride ethc' in Cleanroom D-3]]
	~~''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab''~~

	Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.		Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.

Mbec at 14:12, 30 January 2023

2023-01-30T14:12:24Z

← Older revision		Revision as of 16:12, 30 January 2023
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	[[Image:Nitrideetch.JPG\|300x300px\|thumb\|The 'Nitride etch' bath is placed inside 'Wet bench 02: Nitride ethc' in Cleanroom D-3]]		[[Image:Nitrideetch.JPG\|300x300px\|thumb\|The 'Nitride etch' bath is placed inside 'Wet bench 02: Nitride ethc' in Cleanroom D-3]]
			''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab''

	Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.		Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.

Jesyup: Labmanager link updated

2022-10-11T13:48:40Z

Labmanager link updated

← Older revision		Revision as of 15:48, 11 October 2022
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	'''NB: Great care has to be taken in this process due to risk of bumping. Therefore it is essential, that you stir thoroughly during heat up, before you start heating, at 50°C and finally at 100°C'''		'''NB: Great care has to be taken in this process due to risk of bumping. Therefore it is essential, that you stir thoroughly during heat up, before you start heating, at 50°C, 80°C and finally at 100°C'''


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	<!-- remember to remove the type of documents that are not present -->		<!-- remember to remove the type of documents that are not present -->

	[~~http~~://labmanager~~.danchip~~.dtu.dk/function.php?module=Machine&view=view&mach=~~130~~ Nitride etch info page in LabManager],		[https://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=377 Nitride etch info page in LabManager],

	<br clear="all" />		<br clear="all" />

Choi: /* Wet Silicon Nitride Etch */

2020-01-27T08:55:58Z

Wet Silicon Nitride Etch

← Older revision		Revision as of 10:55, 27 January 2020
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	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	!Link to safety APV and ~~KBA~~		!Link to safety APV and SDS
	\|[http://labmanager.danchip.dtu.dk/d4Show.php?id=1892&mach=130 see APV here]		\|[http://labmanager.danchip.dtu.dk/d4Show.php?id=1892&mach=130 see APV here]
	[~~http~~://kemibrug.dk/~~KBA/CAS/116297~~/?~~show_KBA~~=~~1&portaldesign~~=1 see ~~KBA~~ here]		[https://kemibrug.dk/Kemikalier/Action?id=RCU2MHolYzIlODIlN2UlYzIlODB2JWMyJTgxJTdleiVjMiU4N0RZeiVjMiU4OXYlN2UlYzIlODElYzIlODhESk1OTEZKTVRkJWMyJTg3JTdjdiVjMiU4MyU3ZSVjMiU4OHYlYzIlODklN2UlYzIlODQlYzIlODMlYzIlODglNWVZUkk=#K see SDS here (requires login)]
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"

Choi at 08:53, 27 January 2020

2020-01-27T08:53:49Z

← Older revision		Revision as of 10:53, 27 January 2020
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	Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.		Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.

	The etch solution is initially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - ca. 160°C ~~the selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>~~.		The etch solution is initially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - ca. 160°C.

Choi at 08:52, 27 January 2020

2020-01-27T08:52:54Z

← Older revision		Revision as of 10:52, 27 January 2020
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''


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	[[Category: Etch (Wet) bath\|Silicon Nitride]]		[[Category: Etch (Wet) bath\|Silicon Nitride]]

	[[Image:Nitrideetch.JPG\|300x300px\|thumb\|Wet ~~nitride etch~~: ~~positioned~~ in ~~cleanroom~~ D-3]]		[[Image:Nitrideetch.JPG\|300x300px\|thumb\|The 'Nitride etch' bath is placed inside 'Wet bench 02: Nitride ethc' in Cleanroom D-3]]

	Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" ~~wafer carrier~~. The ~~wetbench~~ is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.		Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafers in dedicated carriers. The 'Wetbench 02: Nitride etch' is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.

	The etch solution is initially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - ca. 160°C the selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>.		The etch solution is initially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - ca. 160°C the selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>.


	'''NB: Great care has to be taken in this process due to risk of ~~"shock-boiling"~~ Therefore it is essential, that you stir ~~thorough~~ during heat up, before you start heating, at 50°C and finally at 100°C'''		'''NB: Great care has to be taken in this process due to risk of bumping. Therefore it is essential, that you stir thoroughly during heat up, before you start heating, at 50°C and finally at 100°C'''


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	\|-style="background:silver; color:black"		\|-style="background:silver; color:black"
	!		!
	! Nitride Etch @ 160 <sup>o</sup>C		! Nitride Etch @ 160<sup>o</sup>C
	\|-		\|-

Mbec: /* Wet Silicon Nitride Etch */

2017-02-23T10:19:20Z

Wet Silicon Nitride Etch

← Older revision		Revision as of 12:19, 23 February 2017
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	[[Category: Etch (Wet) bath\|Silicon Nitride]]		[[Category: Etch (Wet) bath\|Silicon Nitride]]

	~~==Wet Silicon Nitride Etch==~~		[[Image:Nitrideetch.JPG\|300x300px\|thumb\|Wet nitride etch: positioned in cleanroom D-3]]
	[[Image:~~Wet_nitride_etch~~.JPG\|300x300px\|thumb\|Wet nitride etch: positioned in cleanroom D-3]]

	Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafer carrier. The wetbench is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.		Wet Etching of silicon nitride - stoichiometric and Si-rich - is done in a dedicated wetbench with an integrated quartz tank. The quartz tank can take up to 25 6" wafer carrier. The wetbench is placed in cleanroom D-3. The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic - meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.

Mbec: /* THIS PAGE IS UNDER CONSTRUCTION200px */

2017-02-22T08:38:22Z

THIS PAGE IS UNDER CONSTRUCTION200px

← Older revision		Revision as of 10:38, 22 February 2017
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''

	~~=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png\|200px]]=~~