Specific Process Knowledge/Etch/Wet III-V Etches - Revision history

Mbec at 12:27, 10 February 2026

2026-02-10T12:27:41Z

@@ Line 11: / Line 11: @@
 It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work.
-'''For the GaAs and InP waste you should collect the waste and mark it Carcinogenic. If it contains H2O2 use empty H2O2 bottles (since they should have a special lid that avoid over pressure).
+'''For the GaAs and InP substrate etching, waste should be collected and marked ''Carcinogenic''.
-Remember to mark the bottle that it contains GaAs and InP and that it is carcinogenic.'''
+If it contains H2O2 use empty H2O2 bottles (since they should have a special lid that avoid over pressure).
 [[Image:FH07.jpg|300x300px|right|thumb|'Fume hood 07' in cleanroom D3]]
 <br>
@@ Line 20: / Line 27: @@
 ==HCl:H3PO4 etch==

Mbec at 14:19, 9 February 2026

2026-02-09T14:19:42Z

← Older revision		Revision as of 16:19, 9 February 2026
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	<br>		<br>
	It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work.		It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work.
	'''For the GaAs and InP waste you should collect the waste ~~due to~~ it is Carcinogenic. If it contains H2O2 use empty H2O2 bottles (since they should have a special lid that avoid over pressure).
			'''For the GaAs and InP waste you should collect the waste and mark it Carcinogenic. If it contains H2O2 use empty H2O2 bottles (since they should have a special lid that avoid over pressure).
	Remember to mark the bottle that it contains GaAs and InP and that it is carcinogenic.'''		Remember to mark the bottle that it contains GaAs and InP and that it is carcinogenic.'''
	[[Image:FH07.jpg\|300x300px\|right\|thumb\|'Fume hood 07' in cleanroom D3]]		[[Image:FH07.jpg\|300x300px\|right\|thumb\|'Fume hood 07' in cleanroom D3]]

Mbec at 14:17, 9 February 2026

2026-02-09T14:17:59Z

Jehan: /* More info regarding etching of III-V materials */

2025-10-08T09:21:52Z

More info regarding etching of III-V materials

← Older revision		Revision as of 11:21, 8 October 2025
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	==More info regarding etching of III-V materials==		==More info regarding etching of III-V materials==

	More info on etching of III-V materials (not Nanolab wiki) can be found here:		More info on etching of III-V materials (not the DTU Nanolab wiki) can be found here:

	https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes		https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes '''(at the UCSB Nanofab Wiki)'''

	and		and

	https://www.sciencedirect.com/science/article/pii/S0927796X00000279		https://www.sciencedirect.com/science/article/pii/S0927796X00000279 '''(at the UCSB Nanofab Wiki)'''

Rkch at 08:29, 8 October 2025

2025-10-08T08:29:32Z

← Older revision		Revision as of 10:29, 8 October 2025
Line 225:		Line 225:
	==More info regarding etching of III-V materials==		==More info regarding etching of III-V materials==

	More info on etching of III-V materials (not Nanolab ~~results~~) can be found here:		More info on etching of III-V materials (not Nanolab wiki) can be found here:

	https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes		https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes

Rkch: /* InP or GaAs substrate etching */

2025-10-08T08:03:05Z

InP or GaAs substrate etching

← Older revision		Revision as of 10:03, 8 October 2025
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	Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.		Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.

	== ~~InP or~~ GaAs substrate etching ==		== GaAs substrate etching ==

	When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.		When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.

Rkch at 08:02, 8 October 2025

2025-10-08T08:02:46Z

← Older revision		Revision as of 10:02, 8 October 2025
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	*[[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]		*[[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]
	*[[Specific Process Knowledge/Etch/III-V RIE\|III-V RIE - Plassys]] (will be decommissioned October 2025)		*[[Specific Process Knowledge/Etch/III-V RIE\|III-V RIE - Plassys]] (will be decommissioned October 2025)




			== InP substrate etching ==

			When etching InP substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.

			There should be a bottle in the fumehood for HCl used to etch InP substrates.
			Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.

	== InP or GaAs substrate etching ==		== InP or GaAs substrate etching ==

	When etching ~~InP or~~ GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.		When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.

	There should be ~~two bottles~~ in the fumehood ~~one for HCl used to etch InP substrates and one~~ for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.		There should be a bottle in the fumehood for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.
	Once the ~~bottles are~~ full, ~~you~~ should ~~bring them in~~ the basement of building 346 and ~~have~~ a new one in CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid ~~overpressure~~)'''~~, while for InP waste we can use an empty and clean developer bottle.~~		Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid over pressure).'''

	==HCl:H3PO4 etch==		==HCl:H3PO4 etch==

Rkch at 07:53, 8 October 2025

2025-10-08T07:53:42Z

← Older revision		Revision as of 09:53, 8 October 2025
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]'''

	~~[[index.php?title=Category:Equipment\|Etch Wet III-V]]~~
	~~[[index.php?title=Category:Etch (Wet) bath\|III-V]]~~

	This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager:		This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager:

Rkch at 07:35, 8 October 2025

2025-10-08T07:35:48Z

← Older revision		Revision as of 09:35, 8 October 2025
Line 5:		Line 5:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]'''

	[[Category: Equipment\|Etch Wet III-V]]		[[index.php?title=Category:Equipment\|Etch Wet III-V]]
	[[Category: Etch (Wet) bath\|III-V]]		[[index.php?title=Category:Etch (Wet) bath\|III-V]]

	This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager:		This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager:
Line 18:		Line 18:
	*[[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]		*[[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]
	*[[Specific Process Knowledge/Etch/III-V RIE\|III-V RIE - Plassys]] (will be decommissioned October 2025)		*[[Specific Process Knowledge/Etch/III-V RIE\|III-V RIE - Plassys]] (will be decommissioned October 2025)


	== InP or GaAs substrate etching ==		== InP or GaAs substrate etching ==
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	The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.		The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.

			==More info regarding etching of III-V materials==

			More info on etching of III-V materials (not Nanolab results) can be found here:

			https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes

			and

			https://www.sciencedirect.com/science/article/pii/S0927796X00000279

Jehan at 13:08, 7 October 2025

2025-10-07T13:08:35Z

← Older revision		Revision as of 15:08, 7 October 2025
Line 17:		Line 17:
	For dry etching III-V materials see		For dry etching III-V materials see
	*[[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]		*[[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]
	*[[Specific Process Knowledge/Etch/III-V RIE\|III-V RIE - Plassys]]		*[[Specific Process Knowledge/Etch/III-V RIE\|III-V RIE - Plassys]] (will be decommissioned October 2025)

← Older revision		Revision as of 16:17, 9 February 2026
Line 10:		Line 10:
	<br>		<br>
	It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work.		It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work.
			'''For the GaAs and InP waste you should collect the waste due to it is Carcinogenic. If it contains H2O2 use empty H2O2 bottles (since they should have a special lid that avoid over pressure).
			Remember to mark the bottle that it contains GaAs and InP and that it is carcinogenic.'''
	[[Image:FH07.jpg\|300x300px\|right\|thumb\|'Fume hood 07' in cleanroom D3]]		[[Image:FH07.jpg\|300x300px\|right\|thumb\|'Fume hood 07' in cleanroom D3]]
	<br>		<br>
Line 23:		Line 25:
	When etching InP substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.		When etching InP substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.

	There should be a bottle in the fumehood for HCl used to etch InP substrates.		There should be a bottle in the fumehood for HCl used to etch InP substrates marked InP carcinogenic.
	Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.		Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.

Line 30:		Line 32:
	When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.		When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.

	There should be a bottle in the fumehood for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.		There should be a bottle in the fumehood for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates marked GaAs carcinogenic.
	Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid over pressure).'''		Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid over pressure).'''

Line 219:		Line 221:
	C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> is a selective etch of GaAs; does not etch Al<sub>x</sub>Ga<sub>{1-x}</sub>As if x > 0.45.		C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> is a selective etch of GaAs; does not etch Al<sub>x</sub>Ga<sub>{1-x}</sub>As if x > 0.45.

	Solid C<sub>6</sub>H<sub>8</sub>O<sub>7</sub> is mixed 1:1 by weight with H<sub>2</sub>O ~~(30%)~~ using magnetic stirring. The solution C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O is thereafter mixed 4:1 volume ratio with H<sub>2</sub>O<sub>2</sub>.		Solid C<sub>6</sub>H<sub>8</sub>O<sub>7</sub> is mixed 1:1 by weight with H<sub>2</sub>O using magnetic stirring. The solution C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O is thereafter mixed 4:1 volume ratio with H<sub>2</sub>O<sub>2</sub>(30%).

	The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.		The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.