Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES - Revision history

Mmat at 12:58, 16 June 2025

2025-06-16T12:58:09Z

← Older revision		Revision as of 14:58, 16 June 2025
Line 1:		Line 1:
			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labnanolab.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES click here]'''<br>		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labnanolab.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES click here]'''<br>
	~~{{CC-DTU}}~~

	==CHF3/O2 etch==		==CHF3/O2 etch==

2023-03-24T09:21:26Z

← Older revision		Revision as of 11:21, 24 March 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labnanolab.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labnanolab.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES click here]'''<br>
	{{CC-DTU}}		{{CC-DTU}}

2023-03-24T09:21:09Z

← Older revision		Revision as of 11:21, 24 March 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labnanolab.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labnanolab.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE/III_V_RIE_ETCHES click here]'''
			{{CC-DTU}}

	==CHF3/O2 etch==		==CHF3/O2 etch==

2022-08-29T13:54:45Z

← Older revision		Revision as of 15:54, 29 August 2022
Line 6:		Line 6:
	A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view.		A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub> etch rate are very sensitive to the flow ratio of CHF<sub>3</sub> and O<sub>2</sub> . The current processes have been optimized from this point of view.

	There are 3 standard programs:		There are 4 standard programs:

2020-02-07T11:06:00Z

CHF3/O2 etch

← Older revision		Revision as of 13:06, 7 February 2020
Line 47:		Line 47:
	\|		\|
	\|10.6		\|10.6
	\|[[SiO2 DOE\|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab''		\|[[/SiO2 DOE\|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab''
	\|-		\|-
	!Lower etch rate, medium selectivity to resist		!Lower etch rate, medium selectivity to resist

2020-02-07T11:02:05Z

CHF3/O2 etch

← Older revision		Revision as of 13:02, 7 February 2020
Line 47:		Line 47:
	\|		\|
	\|10.6		\|10.6
	\|''dec2019/jan2020 by Qugig and bghe @nanolab''		\|[[SiO2 DOE\|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab''
	\|-		\|-
	!Lower etch rate, medium selectivity to resist		!Lower etch rate, medium selectivity to resist

2020-02-05T13:32:31Z

CHF3/O2 etch

← Older revision		Revision as of 15:32, 5 February 2020
Line 47:		Line 47:
	\|		\|
	\|10.6		\|10.6
	\|''~~Done~~ dec2019/jan2020 by Qugig and bghe @nanolab''		\|''dec2019/jan2020 by Qugig and bghe @nanolab''
	\|-		\|-
	!Lower etch rate, medium selectivity to resist		!Lower etch rate, medium selectivity to resist
Line 61:		Line 61:
	\|~12		\|~12
	\|		\|
	\| [[/Details SiO2_100\|Images and reproducibility]] ''~~Done~~ dec2019/jan2020 by Qugig and bghe @nanolab''		\| [[/Details SiO2_100\|Images and reproducibility]] ''dec2019/jan2020 by Qugig and bghe @nanolab''
	\|-		\|-
	!Si3N4Ti		!Si3N4Ti

2020-02-05T13:31:48Z

CHF3/O2 etch

← Older revision		Revision as of 15:31, 5 February 2020
Line 47:		Line 47:
	\|		\|
	\|10.6		\|10.6
	\|''Done dec2019/jan2020 by Qugig~~@nanolab~~ and bghe@nanolab''		\|''Done dec2019/jan2020 by Qugig and bghe @nanolab''
	\|-		\|-
	!Lower etch rate, medium selectivity to resist		!Lower etch rate, medium selectivity to resist
Line 61:		Line 61:
	\|~12		\|~12
	\|		\|
	\|''Done dec2019/jan2020 by Qugig~~@nanolab~~ and bghe@nanolab'' ~~[[/Details SiO2_100\|Images and reproducibility]]~~		\| [[/Details SiO2_100\|Images and reproducibility]] ''Done dec2019/jan2020 by Qugig and bghe @nanolab''
	\|-		\|-
	!Si3N4Ti		!Si3N4Ti

2020-02-05T13:03:28Z

CHF3/O2 etch

2020-02-05T10:24:12Z

CHF3/O2 etch

← Older revision		Revision as of 12:24, 5 February 2020
Line 9:		Line 9:


	{\| border="1" style="text-align: center; width: ~~600px~~; height: 350px;"		{\| border="1" style="text-align: center; width: 1000px; height: 350px;"
	! colspan="8" style="text-align: center;" style="background: #efefef;" \| CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min		! colspan="8" style="text-align: center;" style="background: #efefef;" \| CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min
	\|-		\|-
Line 47:		Line 47:
	\|		\|
	\|10.6		\|10.6
	\|~~ ~~		\|''Done dec2019/jan2020 by Qugig@nanolab and bghe@nanolab''
	\|-		\|-
	!Lower etch rate, medium selectivity to resist		!Lower etch rate, medium selectivity to resist
Line 61:		Line 61:
	\|~12		\|~12
	\|		\|
	\|[[/Details SiO2_100\|Images and reproducibility]]		\|''Done dec2019/jan2020 by Qugig@nanolab and bghe@nanolab'' [[/Details SiO2_100\|Images and reproducibility]]
	\|-		\|-
	!Si3N4Ti		!Si3N4Ti