Specific Process Knowledge/Etch/III-V RIE - Revision history

Bghe at 13:49, 13 October 2025

2025-10-13T13:49:19Z

← Older revision		Revision as of 15:49, 13 October 2025
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	'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''		'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''

	~~<blockquote>~~<span style="background:#ff0000"> This tool has been decommissioned - please ask the dryetch group for alternatives.</span>~~</blockquote>~~		==III-V RIE Plassys <span style="background:#ff0000"> This tool has been decommissioned - please ask the dryetch group for alternatives.</span>==

	~~==III-V RIE Plassys~~==
	===(will be decommissioned October 2025)===		===(will be decommissioned October 2025)===

Bghe at 13:48, 13 October 2025

2025-10-13T13:48:45Z

← Older revision		Revision as of 15:48, 13 October 2025
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	'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''		'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''

	<blockquote>This tool ~~is expected to be~~ decommissioned ~~soon~~ - please ask the dryetch group for alternatives.</blockquote>		<blockquote><span style="background:#ff0000"> This tool has been decommissioned - please ask the dryetch group for alternatives.</span></blockquote>

	==III-V RIE Plassys==		==III-V RIE Plassys==

Jehan at 13:11, 7 October 2025

2025-10-07T13:11:17Z

← Older revision		Revision as of 15:11, 7 October 2025
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	==III-V RIE Plassys==		==III-V RIE Plassys==
			===(will be decommissioned October 2025)===

	Name: MG300 RIE <br>		Name: MG300 RIE <br>

Bghe at 09:57, 4 September 2025

2025-09-04T09:57:44Z

← Older revision		Revision as of 11:57, 4 September 2025
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	'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''		'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''

			<blockquote>This tool is expected to be decommissioned soon - please ask the dryetch group for alternatives.</blockquote>

	==III-V RIE Plassys==		==III-V RIE Plassys==

Mmat: /* Overview of the performance of the RIE´s and some process-related parameters */

2025-08-08T10:17:56Z

Overview of the performance of the RIE´s and some process-related parameters

← Older revision		Revision as of 12:17, 8 August 2025
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	*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214)		*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214)
	*InP: ~29 nm/min		*InP: ~29 nm/min
	*~~GaAs~~: ~9 nm/min		*InGaAs: ~9 nm/min
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Anisotropy		\|style="background:LightGrey; color:black"\|Anisotropy

Bghe: /* Overview of the performance of the RIE´s and some process-related parameters */

2023-03-22T15:10:33Z

Overview of the performance of the RIE´s and some process-related parameters

← Older revision		Revision as of 17:10, 22 March 2023
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	*20 cm		*20 cm
	\|-		\|-
	\| style="background:LightGrey; color:black"\|~~Substrate material~~ allowed		\| style="background:LightGrey; color:black"\|Material allowed
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	* III-V compound semiconductors		* III-V compound semiconductors
	\|-		* Silicon based materials
	~~\| style="background:LightGrey; color:black"\|Possible masking material~~		* Photoresist/e-beam resist
	~~\|style="background:WhiteSmoke; color:black"\|~~		* BCB
	*Photoresist/e-beam resist		* For other materials, please ask
	*~~Titanium~~
	\|-		\|-
	\|}		\|}

Bghe at 15:05, 22 March 2023

2023-03-22T15:05:27Z

← Older revision		Revision as of 17:05, 22 March 2023
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	The diameter of the quartz plate is 20 cm, ie up to 2 4" ~~wafers~~, 3 3" ~~wafers~~ or 4 2" ~~wafers~~ can be processed simultaneously~~. The area, A, of the quartz plate is 314 cm<sup>2</sup>.~~		The diameter of the quartz plate is 20 cm with a recess for 4" wafers, ie up to one 4" wafer, one 3" wafer or one 2" wafer or several smaller samples can be processed simultaneously. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.

	~~The intensity of the plasma is the ratio of power applied to the plasma, P, to the area, A, of the quartz plate. A power of 1000 W thus gives a plasma intensity of 0.32 W/cm<sup>2</sup>~~. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.

	The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning\|Chamber Cleaning]].		The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning\|Chamber Cleaning]].

Bghe at 15:02, 22 March 2023

2023-03-22T15:02:52Z

← Older revision		Revision as of 17:02, 22 March 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE click here]'''<br>		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE click here]'''<br>
	'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''
			'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''

	==III-V RIE Plassys==		==III-V RIE Plassys==

Bghe at 15:02, 22 March 2023

2023-03-22T15:02:38Z

← Older revision		Revision as of 17:02, 22 March 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE click here]'''<br>
			'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''

	==III-V RIE Plassys==		==III-V RIE Plassys==

Bghe at 11:00, 6 September 2022

2022-09-06T11:00:34Z

← Older revision		Revision as of 13:00, 6 September 2022
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	[[Image:III-V RIE Plassys.jpg\|right\|250px\|thumb\| III-V RIE is located in room A-1]]		[[Image:III-V RIE Plassys.jpg\|right\|250px\|thumb\| III-V RIE is located in room A-1]]

	Dry etching of III-V compound semiconductors is performed with a conventional Reactive Ion Etch (RIE) located in cleanroom 1. The III-V RIE is a Plassys model MG300. Find the company website her: [http://www.plassys.com/ Plassys].		Dry etching of III-V compound semiconductors is performed with a conventional Reactive Ion Etch (RIE) located in cleanroom A-1. The III-V RIE is a Plassys model MG300. Find the company website her: [http://www.plassys.com/ Plassys].

	The system is equipped with a laser interferometer to monitor etch-rate and -depth.		The system is equipped with a laser interferometer to monitor etch-rate and -depth.
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	The diameter of the quartz plate is 20 cm, ie up to 2 4" wafers, 3 3" wafers or 4 2" wafers can be processed simultaneously. The area, A, of the quartz plate is 314 cm<sup>2</sup>.		The diameter of the quartz plate is 20 cm, ie up to 2 4" wafers, 3 3" wafers or 4 2" wafers can be processed simultaneously. The area, A, of the quartz plate is 314 cm<sup>2</sup>.

	The intensity of the plasma is the ratio of power applied to the plasma, P, to the area, A, of the quartz plate. A power of 1000 W thus gives a plasma intensity of 0.32 W/cm<sup>2</sup>. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec ~~whereafter~~ the power can be lowered to the desired value.		The intensity of the plasma is the ratio of power applied to the plasma, P, to the area, A, of the quartz plate. A power of 1000 W thus gives a plasma intensity of 0.32 W/cm<sup>2</sup>. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.

	The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning\|Chamber Cleaning]].		The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning\|Chamber Cleaning]].