Specific Process Knowledge/Etch/III-V ICP/GaAs-AlGaAs - Revision history

Bghe at 09:47, 4 September 2025

2025-09-04T09:47:01Z

← Older revision		Revision as of 11:47, 4 September 2025
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	\|-		\|-
	\|Platen chiller temperature		\|Platen chiller temperature
	\|20 <sup>o</sup>C		\|20<sup>o</sup>C
	\|-		\|-
	\|}		\|}
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	\|-		\|-
	\|Sidewall angle		\|Sidewall angle
	\|~ 85-90 <sup>o</sup>		\|~ 85-90<sup>o</sup>
	\|-		\|-
	\|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP)		\|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP)
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	\|-		\|-
	\|Platen chiller temperature		\|Platen chiller temperature
	\|20 <sup>o</sup>C		\|20<sup>o</sup>C
	\|-		\|-
	\|}		\|}
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	\|-		\|-
	\|Sidewall angle		\|Sidewall angle
	\|~ 90 <sup>o</sup>		\|~ 90<sup>o</sup>
	\|-		\|-
	\|Selectivity (GaAs:SiO<sub>2</sub>)		\|Selectivity (GaAs:SiO<sub>2</sub>)
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	\|-		\|-
	\|Platen chiller temperature		\|Platen chiller temperature
	\|20 <sup>o</sup>C		\|20<sup>o</sup>C
	\|-		\|-
	\|}		\|}
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	\|-		\|-
	\|Sidewall angle		\|Sidewall angle
	\|85-90 <sup>o</sup>		\|85-90<sup>o</sup>
	\|-		\|-
	\|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP)		\|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP)

Bghe at 08:41, 10 February 2023

2023-02-10T08:41:30Z

← Older revision		Revision as of 10:41, 10 February 2023
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	{\| border="1" cellspacing="2" cellpadding="3"		{\| border="1" cellspacing="2" cellpadding="3"
	![[image:ICP_BCL3_result.jpg\|300x300px\|thumb\|left\|Result of GaAs etching with BCl<sub>3</sub>. Qijiang Ran, DTU Photonics, 2011. ]]		![[image:ICP_BCL3_result.jpg\|300x300px\|thumb\|left\|Result of GaAs etching with BCl<sub>3</sub>. Done by: Qijiang Ran, DTU Photonics, 2011. ]]
	\|-		\|-
	\|}		\|}

Bghe: /* GaAs/AlGaAs etching using III-V ICP */

2023-02-10T08:39:58Z

GaAs/AlGaAs etching using III-V ICP

← Older revision		Revision as of 10:39, 10 February 2023
Line 2:		Line 2:

	===GaAs/AlGaAs etching using III-V ICP===		===GaAs/AlGaAs etching using III-V ICP===
	'''''~~Work done~~ by DTU Photonics before 2011'''''		'''''Recipes developed and/or tested by DTU Photonics internal before 2011'''''

	{\| border="1" cellspacing="2" cellpadding="3"		{\| border="1" cellspacing="2" cellpadding="3"

Bghe: /* GaAs/AlGaAs etching using III-V ICP */

2023-02-10T08:39:11Z

GaAs/AlGaAs etching using III-V ICP

← Older revision		Revision as of 10:39, 10 February 2023
Line 2:		Line 2:

	===GaAs/AlGaAs etching using III-V ICP===		===GaAs/AlGaAs etching using III-V ICP===
	Work done by ~~people from~~ Photonics before 2011		'''''Work done by DTU Photonics before 2011'''''

	{\| border="1" cellspacing="2" cellpadding="3"		{\| border="1" cellspacing="2" cellpadding="3"

Bghe at 13:14, 18 August 2021

2021-08-18T13:14:00Z

← Older revision		Revision as of 15:14, 18 August 2021
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]'''

	===GaAs/AlGaAs etching using III-V ICP===		===GaAs/AlGaAs etching using III-V ICP===

Bghe at 13:13, 18 August 2021

2021-08-18T13:13:34Z

← Older revision		Revision as of 15:13, 18 August 2021
Line 2:		Line 2:

	===GaAs/AlGaAs etching using III-V ICP===		===GaAs/AlGaAs etching using III-V ICP===
			Work done by people from Photonics before 2011

	{\| border="1" cellspacing="2" cellpadding="3"		{\| border="1" cellspacing="2" cellpadding="3"

Bghe at 09:12, 28 January 2019

2019-01-28T09:12:06Z

← Older revision		Revision as of 11:12, 28 January 2019
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]'''

	===GaAs/AlGaAs etching===		===GaAs/AlGaAs etching using III-V ICP===

	{\| border="1" cellspacing="2" cellpadding="3"		{\| border="1" cellspacing="2" cellpadding="3"

Jmli at 09:41, 1 August 2016

2016-08-01T09:41:49Z

← Older revision		Revision as of 11:41, 1 August 2016
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]'''

	===GaAs/AlGaAs etching===		===GaAs/AlGaAs etching===

Bghe: Created page with "'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etc..."

2014-06-19T12:26:40Z

Created page with "'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etc..."

New page

'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]'''

===GaAs/AlGaAs etching===

{| border="1" cellspacing="2" cellpadding="3"
|'''Recipe'''
|'''GaAs Etch'''
|-
|Cl2 flow
|4 sccm
|-
|Ar flow
|12 sccm
|-
|Platen power
|80 W
|-
|Coil power
|700 W
|-
|Pressure
|6 mTorr
|-
|Platen chiller temperature
|20 oC
|-
|}

{| border="1" cellspacing="2" cellpadding="3"
|colspan="2" align="center"| '''Results (GaAs Etch)'''
|-
|GaAs etch rate
|>500 nm/min
|-
|Sidewall angle
|~ 85-90 o
|-
|Selectivity (GaAs:Si3N4, GaAs:AlInP)
|10:1, 5:1
|-
|}

{| border="1" cellspacing="2" cellpadding="3"
|'''Recipe'''
|'''GaAs_AlGaAs Etch'''
|-
|Cl2 flow
|20 sccm
|-
|N2 flow
|50 sccm
|-
|Platen power
|100 W
|-
|Coil power
|600 W
|-
|Pressure
|2 mTorr
|-
|Platen chiller temperature
|20 oC
|-
|}

{| border="1" cellspacing="2" cellpadding="3"
|colspan="2" align="center"| '''Results (GaAs_AlGaAs Etch)'''
|-
|AlGaAs etch rate
|>1000 nm/min
|-
|Sidewall angle
|~ 90 o
|-
|Selectivity (GaAs:SiO2)
|30:1
|-
|}

{| border="1" cellspacing="2" cellpadding="3"
|'''Recipe'''
|'''GaAs_AlGaAs Etch_BCl3'''
|-
|Cl2 flow
|10 sccm
|-
|BCl3 flow
|10 sccm
|-
|Ar flow
|10 sccm
|-
|N2 flow
|4 sccm
|-
|Platen power
|50 W
|-
|Coil power
|500 W
|-
|Pressure
|1 mTorr
|-
|Platen chiller temperature
|20 oC
|-
|}

{| border="1" cellspacing="2" cellpadding="3" align="left"
|colspan="2" align="center"| '''Results (GaAs_AlGaAs Etch_BCl3)'''
|-
|GaAs etch rate
|>750 nm/min
|-
|Sidewall angle
|85-90 o
|-
|Selectivity (GaAs:Si3N4, GaAs:AlInP)
|10:1
|-
|}

{| border="0" align="left"
|
|-
|}

{| border="1" cellspacing="2" cellpadding="3"
![[image:ICP_BCL3_result.jpg|300x300px|thumb|left|Result of GaAs etching with BCl3. Qijiang Ran, DTU Photonics, 2011. ]]
|-
|}