Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE - Revision history

Mmat at 15:03, 21 May 2025

2025-05-21T15:03:31Z

← Older revision		Revision as of 17:03, 21 May 2025
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	{{CC-bghe1}} <br>		{{CC-bghe1}} <br>
	<!-- ~~cheched~~ by bghe 2021-08-18-->		<!-- checked by bghe 2021-08-18-->
	I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>		I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>
	Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]		Zhibo Li, DTU Nanolab (former DTU Danchip), has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]

	==C4F8==		==C4F8==

2023-02-10T08:27:43Z

C4F8

← Older revision		Revision as of 10:27, 10 February 2023
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	==C4F8==		==C4F8==
			{{CC-bghe2}} <br>
	I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong\| here]]		I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong\| here]]

2023-02-10T08:25:45Z

← Older revision		Revision as of 10:25, 10 February 2023
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			{{CC-bghe1}} <br>
	<!-- cheched by bghe 2021-08-18-->		<!-- cheched by bghe 2021-08-18-->
	I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>		I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>

2021-08-18T13:47:05Z

← Older revision		Revision as of 15:47, 18 August 2021
Line 1:		Line 1:
			<!-- cheched by bghe 2021-08-18-->
	I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>		I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>
	Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]		Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]

2019-06-26T08:09:56Z

← Older revision		Revision as of 10:09, 26 June 2019
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	I (bghe@nanolab) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>		I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>
	Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]		Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]

2019-06-26T08:08:04Z

← Older revision		Revision as of 10:08, 26 June 2019
Line 1:		Line 1:
	I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>		I (bghe@nanolab) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>
	Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]		Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]

2017-06-16T09:57:53Z

C4F8 50px

← Older revision		Revision as of 11:57, 16 June 2017
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	Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]		Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]

	==C4F8 ~~[[image:Under_construction.png\|50px]]~~==		==C4F8==
	I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong\| here]]		I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong\| here]]

2017-06-16T09:56:31Z

C4F8 50px

← Older revision		Revision as of 11:56, 16 June 2017
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	\|<!--'''T'''--> 0		\|<!--'''T'''--> 0
	\|<!--'''Process time'''--> 8 min		\|<!--'''Process time'''--> 8 min
	\|width="200"\|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch		\|width="200"\|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch. The small pitch line are etched much slower that the higher pitch lines
	\|width="200"\|<!--'''Results'''-->		\|width="200"\|<!--'''Results'''-->
	[[File: ICP metal s007593_25.jpg\|100px\|frameless]] [[File:ICP metal s007593_28.jpg\|100px\|frameless]]		[[File: ICP metal s007593_25.jpg\|100px\|frameless]] [[File:ICP metal s007593_28.jpg\|100px\|frameless]]

2017-06-16T09:54:26Z

C4F8 50px

@@ Line 141: / Line 141: @@
 |width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch
 |width="200"|<!--'''Results'''-->
-[[File: ICP metal s007593_25.jpg|100px|frameless]] [[File:ICP metal s007593_28.jpg|100px|frameless]]
+[[File: ICP metal s007592_21.jpg|100px|frameless]] [[File:ICP metal s007592_24.jpg|100px|frameless]]
 |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
 trench opening as a fraction of pitch-->
@@ Line 159: / Line 159: @@
 :4.3 (1µm P)<br>
 :5.1 [4µm P)
 |<!--'''Etch rate in Si'''-->
+?

2017-06-16T09:49:32Z

C4F8 50px

@@ Line 123: / Line 123: @@
 |<!--'''Selectivity (resist:SiO2)'''-->
 >1:3.5
 |<!--'''Etch rate in Si'''-->
+?