Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride - Revision history

Mmat at 14:20, 16 June 2025

2025-06-16T14:20:28Z

← Older revision		Revision as of 16:20, 16 June 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]'''
	<br> ~~{{CC1}}~~		<br>

	==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ==		==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ==

Bghe at 15:02, 6 February 2023

2023-02-06T15:02:49Z

← Older revision		Revision as of 17:02, 6 February 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]'''
			<br> {{CC1}}

	==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ==		==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ==
			{{CC-bghe2}} <br>
	This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess\|here]]		This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess\|here]]

Bghe: /* Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess */

2022-09-06T11:32:10Z

Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

← Older revision		Revision as of 13:32, 6 September 2022
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	===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ===		==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ==
	This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess\|here]]		This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess\|here]]

Jmli: /* Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess */

2019-11-25T19:38:33Z

Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

← Older revision		Revision as of 21:38, 25 November 2019
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	!Results		!Results
	!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''		!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''
	!Test by BGHE @~~danchip~~		!Test by BGHE @nanolab
	\|-		\|-
	\|Etch rate of LPCVD nitride		\|Etch rate of LPCVD nitride

Jmli at 19:37, 25 November 2019

2019-11-25T19:37:59Z

← Older revision		Revision as of 21:37, 25 November 2019
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]'''

Bghe: /* Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess */

2019-06-26T06:07:14Z

Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

← Older revision		Revision as of 08:07, 26 June 2019
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	===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ===		===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ===
	This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that ~~here:~~ [Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/		This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess\|here]]






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Bghe: /* Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess */

2019-06-26T06:01:02Z

Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

@@ Line 3: / Line 3: @@
 ===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ===
-This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.
+This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that here: [Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/
 {| border="2" cellspacing="2" cellpadding="3"

Bghe at 08:50, 3 July 2017

2017-07-03T08:50:58Z

← Older revision		Revision as of 10:50, 3 July 2017
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	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"
	!Parameter		!Parameter
	!~~Resist mask~~		!A slow etch with carrier
	\|-		\|-
	\|Coil Power [W]		\|Coil Power [W]

Bghe: /* Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess */

2017-02-02T14:51:10Z

Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

← Older revision		Revision as of 16:51, 2 February 2017
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	\|Etch rate of LPCVD nitride		\|Etch rate of LPCVD nitride
	\|'''60-65 nm/min (20% etch load) (Feb. 2014)'''		\|'''60-65 nm/min (20% etch load) (Feb. 2014)'''
	\|		\|
	\|-		\|-
	\|Selectivity to resist [SiN : AZ resist]		\|Selectivity to resist [SiN : AZ resist]
	\|'''1:0.75'''		\|'''1:0.75'''
	\|		\|
	\|-		\|-
	\|Wafer uniformity (100mm)		\|Wafer uniformity (100mm)
	\|'''?'''		\|'''?'''
	\|		\|
	\|-		\|-
	\|Profile [<sup>o</sup>]		\|Profile [<sup>o</sup>]
	\|?		\|?
	\|		\|
	\|-		\|-
	\|Wafer uniformity map (click on the image to view a larger image)		\|Wafer uniformity map (click on the image to view a larger image)
	\|not measured		\|not measured
	\|		\|
	\|-		\|-
	\|SEM profile images		\|SEM profile images
	\|Not measured		\|Not measured
	\|		\|
	\|-		\|-
	\|Etch rate in Barc		\|Etch rate in Barc
	\|		\|
	\|~50 nm/min (Date: 2014-09-09)		\|~50 nm/min (Date: 2014-09-09)
	\|-		\|-
	\|Etch rate in KRF resist		\|Etch rate in KRF resist
	\|		\|
	\|~40 nm/min (Date: 2014-09-09)		\|~40 nm/min (Date: 2014-09-09)
	\|-		\|-

Bghe: /* Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess */

2014-09-09T08:56:25Z

Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

← Older revision		Revision as of 10:56, 9 September 2014
Line 33:		Line 33:
	!Results		!Results
	!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''		!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''
			!Test by BGHE @danchip
	\|-		\|-
	\|Etch rate of LPCVD nitride		\|Etch rate of LPCVD nitride
	\|'''60-65 nm/min (20% etch load) (Feb. 2014)'''		\|'''60-65 nm/min (20% etch load) (Feb. 2014)'''
			\|
	\|-		\|-
	\|Selectivity to resist [SiN : AZ resist]		\|Selectivity to resist [SiN : AZ resist]
	\|'''1:0.75'''		\|'''1:0.75'''
			\|
	\|-		\|-
	\|Wafer uniformity (100mm)		\|Wafer uniformity (100mm)
	\|'''?'''		\|'''?'''
			\|
	\|-		\|-
	\|Profile [<sup>o</sup>]		\|Profile [<sup>o</sup>]
	\|?		\|?
			\|
	\|-		\|-
	\|Wafer uniformity map (click on the image to view a larger image)		\|Wafer uniformity map (click on the image to view a larger image)
	\|not measured		\|not measured
			\|
	\|-		\|-
	\|SEM profile images		\|SEM profile images
	\|Not measured		\|Not measured
			\|
			\|-
			\|Etch rate in Barc
			\|
			\|~50 nm/min (Date: 2014-09-09)
			\|-
			\|Etch rate in KRF resist
			\|
			\|~40 nm/min (Date: 2014-09-09)
	\|-		\|-
	\|}		\|}

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