Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/End point - Revision history

Mmat: /* Etched too long */

2025-03-10T07:06:29Z

Etched too long

← Older revision		Revision as of 09:06, 10 March 2025
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	File:S047670edge_cr_04.jpg		File:S047670edge_cr_04.jpg
	File:S047670edge_cr_06.jpg		File:S047670edge_cr_06.jpg
	-		File:Emptyimage.jpg
	File:S047670edge_cr_08.jpg		File:S047670edge_cr_08.jpg
	File:S047670edge_cr_09.jpg		File:S047670edge_cr_09.jpg

Mmat: /* Etch close to optimal */

2025-03-10T07:05:27Z

Etch close to optimal

← Older revision		Revision as of 09:05, 10 March 2025
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	File:S047676midt_cr_02.jpg		File:S047676midt_cr_02.jpg
	File:S047676midt_cr_04.jpg		File:S047676midt_cr_04.jpg

	</gallery>		</gallery>

	\|		\|
	<gallery caption="S047676 X min, Feb-2025, wafer edge, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="1">		<gallery caption="S047676 X min, Feb-2025, wafer edge, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="1">
	File:S047676edge_cr_01.jpg		File:S047676edge_cr_01.jpg
	File:S047676edge_cr_04.jpg		File:S047676edge_cr_04.jpg
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	File:S047676edge_cr_11.jpg		File:S047676edge_cr_11.jpg
	File:S047676edge_cr_12.jpg		File:S047676edge_cr_12.jpg
	-		File:Emptyimage.jpg
	</gallery>		</gallery>

Bghe: /* Etched too long */

2025-02-25T12:40:00Z

Etched too long

← Older revision		Revision as of 14:40, 25 February 2025
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	==Etched too long==		==Etched too long==
	The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer but the dimensions ~~affected~~ affected, especially at the edge the trenches have become wider. The sidewalls are close to 90 degrees; Sometimes a little positive and sometimes a little negative. The improve more the etch time should be decreased.		The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer but the dimensions are affected, especially at the edge the trenches have become wider. The sidewalls are close to 90 degrees; Sometimes a little positive and sometimes a little negative. The improve more the etch time should be decreased.

	{\| class="wikitable"		{\| class="wikitable"

Bghe: /* Etch close to optimal */

2025-02-25T12:37:29Z

Etch close to optimal

← Older revision		Revision as of 14:37, 25 February 2025
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	==Etch close to optimal==		==Etch close to optimal==
	The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer and the dimensions are close to being unaffected, especially in the middel. The sidewalls are close to 90 degrees; Sometimes a little positive and sometimes a little negative. ~~The~~ improve more the etch rate should be more uniform over the wafer and the Cr should be with small grain sizes. I stopped '''41 s after the end point curve 'SUM_C2' top point on the barc etch''' and '''170 s after the end point curve 'CR_Avg_5208' started to drop on the Cr etch'''.		The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer and the dimensions are close to being unaffected, especially in the middel. The sidewalls are close to 90 degrees; Sometimes a little positive and sometimes a little negative. To improve more the etch rate should be more uniform over the wafer and the Cr should be with small grain sizes. I stopped '''41 s after the end point curve 'SUM_C2' top point on the barc etch''' and '''170 s after the end point curve 'CR_Avg_5208' started to drop on the Cr etch'''.

	{\| class="wikitable"		{\| class="wikitable"

Bghe: /* THIS PAGE IS UNDER CONSTRUCTION200px */

2025-02-25T12:36:02Z

THIS PAGE IS UNDER CONSTRUCTION200px

← Older revision		Revision as of 14:36, 25 February 2025
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	~~=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png\|200px]]=~~
	Made by Berit bghe @ DTU Nanolab		Made by Berit bghe @ DTU Nanolab

Bghe: /* Etched too short */

2025-02-25T12:35:09Z

Etched too short

← Older revision		Revision as of 14:35, 25 February 2025
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	=== End point signal===		=== End point signal===
	====Barc etch====		====Barc etch====
	The End point signal shows a top point after 5.5 s and I stopped the etch after ~~46.4~~ s ~~giving ''' 41 s after the top point'''~~.		The End point signal shows a top point after 6.5 s and I stopped the etch after 30 s. Too short

	<gallery caption="~~S047676 47s~~ barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047671 30s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">

	File:20250213_06_endpoint.jpg		File:20250213_06_endpoint.jpg
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	====Cr etch====		====Cr etch====
	The End point signal shows a drop after 295 s and I stopped the etch after ~~465 s giving '''170 s after the drop started'''~~.		The End point signal shows a drop after 295 s and I stopped the etch after 7:00 min. Too short

	<gallery caption="~~S047676~~ 7:43 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047671 7:00 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">

	File:20250213_08_droppoint.jpg		File:20250213_08_droppoint.jpg

Bghe: /* End point signal */

2025-02-25T12:31:44Z

End point signal

← Older revision		Revision as of 14:31, 25 February 2025
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	The End point signal shows a top point after 5.0 s and I stopped the etch after 60 s.		The End point signal shows a top point after 5.0 s and I stopped the etch after 60 s.

	<gallery caption="~~S047676~~ 60s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047670 60s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">

	File:20250213_02_endpoint.jpg		File:20250213_02_endpoint.jpg
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	The End point signal shows a drop after 264 s and I stopped the etch after 7:45 min		The End point signal shows a drop after 264 s and I stopped the etch after 7:45 min

	<gallery caption="~~S047676~~ 7:45 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047670 7:45 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">

	File:20250213_04_droppoint.jpg		File:20250213_04_droppoint.jpg

Bghe: /* End point signal */

2025-02-25T12:30:42Z

End point signal

← Older revision		Revision as of 14:30, 25 February 2025
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	=== End point signal===		=== End point signal===
	====Barc etch====		====Barc etch====
	The End point signal shows a top point after 5.5 s and I stopped the etch after ~~46.4~~ s ~~giving ''' 41 s after the top point'''~~.		The End point signal shows a top point after 5.0 s and I stopped the etch after 60 s.

	<gallery caption="S047676 ~~47s~~ barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047676 60s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">

	File:20250213_02_endpoint.jpg		File:20250213_02_endpoint.jpg
Line 110:		Line 110:

	====Cr etch====		====Cr etch====
	The End point signal shows a drop after ~~295~~ s and I stopped the etch after ~~465 s giving '''170 s after the drop started'''.~~		The End point signal shows a drop after 264 s and I stopped the etch after 7:45 min

	<gallery caption="S047676 7:43 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047676 7:45 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">

	File:20250213_04_droppoint.jpg		File:20250213_04_droppoint.jpg

Bghe: /* End point signal */

2025-02-25T12:25:33Z

End point signal

← Older revision		Revision as of 14:25, 25 February 2025
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	<gallery caption="S047676 7:43 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047676 7:43 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">
	File:~~data 05 screen shot 02~~.jpg
	File:~~data 05 screen shot 04~~.jpg		File:20250213_04_droppoint.jpg
			File:20250213_04_endpoint.jpg

	</gallery>		</gallery>

Bghe: /* End point signal */

2025-02-25T12:23:46Z

End point signal

← Older revision		Revision as of 14:23, 25 February 2025
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	<gallery caption="S047676 47s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">		<gallery caption="S047676 47s barc etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="2">
	File:~~data 03 screen shot 01~~.jpg
	File:~~data 03 screen shot 02~~.jpg		File:20250213_02_endpoint.jpg
			File:20250213_02_toppoint.jpg

	</gallery>		</gallery>