Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends - Revision history

Bghe: /* Some general process trends */

2025-09-04T13:31:22Z

Some general process trends

← Older revision		Revision as of 15:31, 4 September 2025
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	=Some general process trends=		=Some general process trends=
	This page is gathering some general process trends and good advice for designing IBE recipes. So far these trends ~~has~~ been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012''		This page is gathering some general process trends and good advice for designing IBE recipes. So far these trends have been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012.'' In the lower section you find optimization tips from Oxford Instruments.

	==Etch rate==		==Etch rate==

Bghe: /* Some general process trends */

2025-09-04T13:29:35Z

Some general process trends

← Older revision		Revision as of 15:29, 4 September 2025
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	=Some general process trends=		=Some general process trends=
	This page is ~~supposed to gather~~ some general process trends and good advice for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012''		This page is gathering some general process trends and good advice for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012''

	==Etch rate==		==Etch rate==

Bghe: /* General tips for finding etching parameters (given by Oxford Instruments, used with permission) */

2023-03-24T12:00:56Z

General tips for finding etching parameters (given by Oxford Instruments, used with permission)

← Older revision		Revision as of 14:00, 24 March 2023
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	=General tips for finding etching parameters (given by Oxford Instruments, used with permission)=		=General tips for finding etching parameters (given by Oxford Instruments [https://plasma.oxinst.com/products/ion-beam/ionfab], used with permission)=
	One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage.		One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage.
	*Beam voltage – depends on application, 200-800eV.		*Beam voltage – depends on application, 200-800eV.

Bghe: /* General tips for finding etching parameters (given by Oxford Instruments) */

2023-03-22T13:56:45Z

General tips for finding etching parameters (given by Oxford Instruments)

← Older revision		Revision as of 15:56, 22 March 2023
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	=General tips for finding etching parameters (given by Oxford Instruments)=		=General tips for finding etching parameters (given by Oxford Instruments, used with permission)=
	One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage.		One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage.
	*Beam voltage – depends on application, 200-800eV.		*Beam voltage – depends on application, 200-800eV.

Bghe: /* General tips for finding etching parameters (given by Oxford Instruments) */

2023-03-20T12:14:05Z

General tips for finding etching parameters (given by Oxford Instruments)

← Older revision		Revision as of 14:14, 20 March 2023
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	#Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br>		#Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br>
	#Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br>		#Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br>
	#Adjust beam current to give optimum etch rate without overheating the sample.<~~brA~~>		#Adjust beam current to give optimum etch rate without overheating the sample.<br>
	#Adjust Accelerator voltage to get uniformity. Note that as this will change beam divergence, the sample temperature will change.		#Adjust Accelerator voltage to get uniformity. Note that as this will change beam divergence, the sample temperature will change.

Bghe: /* General tips for finding etching parameters (given by Oxford Instruments) */

2022-09-06T11:19:36Z

General tips for finding etching parameters (given by Oxford Instruments)

← Older revision		Revision as of 13:19, 6 September 2022
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	*Sample temperature is important because:<br>		*Sample temperature is important because:<br>
	#Need to keep any resist cool<br>		#Need to keep any resist cool<br>
	#Temperature can affect chemical processes		#Temperature can affect chemical processes.

Jmli at 16:05, 25 November 2019

2019-11-25T16:05:01Z

← Older revision		Revision as of 18:05, 25 November 2019
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_process_trends click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_process_trends click here]'''

	=Some general process trends=		=Some general process trends=
	This page is supposed to gather some general process trends and good ~~advise~~ for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by ~~etcing~~ some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ ~~danchip~~ before 2012''		This page is supposed to gather some general process trends and good advice for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012''

	==Etch rate==		==Etch rate==
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	\|Beam current * Beam voltage		\|Beam current * Beam voltage
	\|-		\|-
	\|not significantly ~~effected~~ by		\|not significantly affected by
	\|Stage angle		\|Stage angle
	\|-		\|-
	\|not significantly ~~effected~~ by		\|not significantly affected by
	\|Accelerator voltage		\|Accelerator voltage
	\|-		\|-
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	\|Accelerator voltage * Stage angle		\|Accelerator voltage * Stage angle
	\|-		\|-
	\|not significantly ~~effected~~ by		\|not significantly affected by
	\|Beam voltage		\|Beam voltage
	\|-		\|-
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	==Rotation speed==		==Rotation speed==
	The rotation is activated to get a good uniformity over the wafer. The minimum number of rotations to get a good uniformity is 100 rotations for the whole etch. the maximum rotation speed is ~~20rpm~~. That means that an etch shorter that 5 min cannot obtain a very good uniformity.		The rotation is activated to get a good uniformity over the wafer. The minimum number of rotations to get a good uniformity is 100 rotations for the whole etch. the maximum rotation speed is 20 rpm. That means that an etch shorter that 5 min cannot obtain a very good uniformity.
	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"
	!Etch Length [min]		!Etch Length [min]
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	*A guide to optimize etch uniformity is as follows:		*A guide to optimize etch uniformity is as follows:

	#Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. ~~500eV~~ is considered medium energy.<br>		#Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br>
	#Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br>		#Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br>
	#Adjust beam current to give optimum etch rate without overheating the sample.<brA>		#Adjust beam current to give optimum etch rate without overheating the sample.<brA>

Bghe: /* Some general process trends */

2019-06-26T06:14:06Z

Some general process trends

← Older revision		Revision as of 08:14, 26 June 2019
Line 2:		Line 2:

	=Some general process trends=		=Some general process trends=
	This page is supposed to gather some general process trends and good advise for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etcing some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ danchip''		This page is supposed to gather some general process trends and good advise for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etcing some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ danchip before 2012''

	==Etch rate==		==Etch rate==

Bghe: /* Some general process trends */

2017-06-29T06:39:35Z

Some general process trends

← Older revision		Revision as of 08:39, 29 June 2017
Line 2:		Line 2:

	=Some general process trends=		=Some general process trends=
	This page is supposed to gather some general process trends and good advise for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etcing some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ ~~Nanotech~~''		This page is supposed to gather some general process trends and good advise for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etcing some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ danchip''

	==Etch rate==		==Etch rate==

Bghe: /* General tips for finding etching parameters (given by Oxford Instruments) */

2015-07-21T10:04:00Z

General tips for finding etching parameters (given by Oxford Instruments)

← Older revision		Revision as of 12:04, 21 July 2015
Line 85:		Line 85:
	*Beam voltage – depends on application, 200-800eV.		*Beam voltage – depends on application, 200-800eV.
	*Always have neutraliser current 20% extra of the beam current value.		*Always have neutraliser current 20% extra of the beam current value.
	*Accelerator voltage between 100V –500V, adjust to get Ia < 10% Ib ('''it helps protect electronics and power supplies''').		*Accelerator voltage between 100V –500V, adjust to get Ia (beam accelerator current) < 10% Ib (bean current) ('''it helps protect electronics and power supplies''').
	*The real beam current is effectively the beam current minus accelerator current.		*The real beam current is effectively the beam current minus accelerator current.
	*Varying Ar flow for source gas as well as beam current will have an effect on the accelerator current.		*Varying Ar flow for source gas as well as beam current will have an effect on the accelerator current.