Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch - Revision history

Bghe: /* Problems with resists stripping after etching */

2025-09-04T09:27:58Z

Problems with resists stripping after etching

← Older revision		Revision as of 11:27, 4 September 2025
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	===Problems with resists stripping after etching===		===Problems with resists stripping after etching===
	Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the ~~currect~~ will ~~chance~~ the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact ~~[mailto:khara@dtu.dk Kristian Hagsted Rasmussen] or~~ the dry etch group [mailto:dryetch@nanolab.dtu.dk].		Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the current will change the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact the dry etch group [mailto:dryetch@nanolab.dtu.dk].

	===Design of Experiment results===		===Design of Experiment results===

Bghe at 14:36, 6 February 2023

2023-02-06T14:36:49Z

← Older revision		Revision as of 16:36, 6 February 2023
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	'''Feedback to this page''': '''[mailto:plasma@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE%E2%81%84IBSD_Ionfab_300/IBE_magnetic_stack_etch click here]'''		'''Feedback to this page''': '''[mailto:plasma@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE%E2%81%84IBSD_Ionfab_300/IBE_magnetic_stack_etch click here]'''
	'''''The work on this page was done Kristian Hagsted Rasmussen, DTU Nanolab, unless otherwise stated'''''		<br> '''''The work on this page was done Kristian Hagsted Rasmussen, DTU Nanolab, unless otherwise stated'''''
	=Etching magnetic stacks=		=Etching magnetic stacks=
	Magnetic stacks can be etched or more precisly milled in the Ion Beam Etcher (IBE). Below is presented some work done on milling stacks of magnetic layers.		Magnetic stacks can be etched or more precisly milled in the Ion Beam Etcher (IBE). Below is presented some work done on milling stacks of magnetic layers.

Bghe at 14:36, 6 February 2023

2023-02-06T14:36:34Z

← Older revision		Revision as of 16:36, 6 February 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:plasma@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE%E2%81%84IBSD_Ionfab_300/IBE_magnetic_stack_etch click here]'''		'''Feedback to this page''': '''[mailto:plasma@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE%E2%81%84IBSD_Ionfab_300/IBE_magnetic_stack_etch click here]'''
			'''''The work on this page was done Kristian Hagsted Rasmussen, DTU Nanolab, unless otherwise stated'''''
	=Etching magnetic stacks=		=Etching magnetic stacks=
	Magnetic stacks can be etched or more precisly milled in the Ion Beam Etcher (IBE). Below is presented some work done on milling stacks of magnetic layers.		Magnetic stacks can be etched or more precisly milled in the Ion Beam Etcher (IBE). Below is presented some work done on milling stacks of magnetic layers.

Bghe: /* Process parameters */

2023-02-06T14:34:59Z

Process parameters

← Older revision		Revision as of 16:34, 6 February 2023
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	\|-		\|-
	\|}		\|}
			<br clear="all"/>

	===Some SEM profile images of the etched stacks===		===Some SEM profile images of the etched stacks===

Bghe at 13:45, 18 August 2021

2021-08-18T13:45:04Z

← Older revision		Revision as of 15:45, 18 August 2021
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	'''Feedback to this page''': '''[mailto:plasma@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE%E2%81%84IBSD_Ionfab_300/IBE_magnetic_stack_etch click here]'''		'''Feedback to this page''': '''[mailto:plasma@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE%E2%81%84IBSD_Ionfab_300/IBE_magnetic_stack_etch click here]'''

	=Etching magnetic stacks=		=Etching magnetic stacks=

Bghe: /* Conclusions */

2019-06-26T06:18:28Z

Conclusions

← Older revision		Revision as of 08:18, 26 June 2019
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	* Good end point detection by SIMS.		* Good end point detection by SIMS.
	* Burned resist: Lower current, 300 mA can limit resist burning. Note this <b>will</b> affect pattern transfer.		* Burned resist: Lower current, 300 mA can limit resist burning. Note this <b>will</b> affect pattern transfer.
	* Hare ears due to redeposition, thinner resist can limit the size.		* Hare ears (also called fences) due to redeposition, thinner resist can limit the size.

Bghe: /* Problems with resists stripping after etching */

2019-06-26T06:17:47Z

Problems with resists stripping after etching

← Older revision		Revision as of 08:17, 26 June 2019
Line 89:		Line 89:

	===Problems with resists stripping after etching===		===Problems with resists stripping after etching===
	Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:~~kristian.rasmussen~~@~~nanotech.~~dtu.dk Kristian Hagsted Rasmussen].		Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:khara@dtu.dk Kristian Hagsted Rasmussen] or the dry etch group [mailto:dryetch@nanolab.dtu.dk].

	===Design of Experiment results===		===Design of Experiment results===

Bghe: /* Problems with resists stripping af etching */

2019-06-26T06:15:14Z

Problems with resists stripping af etching

← Older revision		Revision as of 08:15, 26 June 2019
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	===Problems with resists stripping af etching===		===Problems with resists stripping after etching===
	Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen].		Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen].


	===Design of Experiment results===		===Design of Experiment results===

Bghe: /* Results of Design of Experiments optimization of magnetic stack etching (Kristian Hagsted Rasmussen spring 2011) */

2017-06-29T06:38:14Z

Results of Design of Experiments optimization of magnetic stack etching (Kristian Hagsted Rasmussen spring 2011)

← Older revision		Revision as of 08:38, 29 June 2017
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	==Results of Design of Experiments optimization of magnetic stack etching (~~[mailto:kristian.rasmussen~~@nanotech.dtu.dk ~~Kristian Hagsted Rasmussen]~~ spring 2011)==		==Results of Design of Experiments optimization of magnetic stack etching (Kristian Hagsted Rasmussen@nanotech.dtu.dk spring 2011)==

Bghe at 09:35, 28 May 2015

2015-05-28T09:35:02Z

← Older revision		Revision as of 11:35, 28 May 2015
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	==Results of Design of Experiments optimization of magnetic stack etching ([mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen] spring 2011)==		==Results of Design of Experiments optimization of magnetic stack etching ([mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen] spring 2011)==


	===Process parameters===		===Process parameters===