Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch - Revision history

Bghe at 09:32, 4 September 2025

2025-09-04T09:32:44Z

← Older revision		Revision as of 11:32, 4 September 2025
Line 49:		Line 49:
	!style="background:silver; color:black" align="left" valign="top"\|Etch rate uniformity		!style="background:silver; color:black" align="left" valign="top"\|Etch rate uniformity
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*<+-2%		*<±2%
	\|		\|
	*+-(0.2% +-0.2%)		*±(0.2% ±0.2%)
	\|-		\|-
	!style="background:silver; color:black" align="left" valign="top"\|Reproducibility		!style="background:silver; color:black" align="left" valign="top"\|Reproducibility
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*<+-2%		*<±2%
	\|		\|
	*+-(0.8% +-0.5%)		*±(0.8% ±0.5%)
	\|-		\|-
	!style="background:silver; color:black" align="left" valign="top"\|Selectivity (Ti etch rate/ZEP etch rate)		!style="background:silver; color:black" align="left" valign="top"\|Selectivity (Ti etch rate/ZEP etch rate)

Bghe at 09:31, 4 September 2025

2025-09-04T09:31:46Z

← Older revision		Revision as of 11:31, 4 September 2025
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	!style="background:silver; color:black" align="left" valign="top"\|Etch depth		!style="background:silver; color:black" align="left" valign="top"\|Etch depth
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~300nm~~		*300nnm
	\|		\|
	*~270 nm		*~270 nm
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	*>80 nm/min		*>80 nm/min
	\|		\|
	*22 nm/min +- 0.~~3nm~~/min (one standard deviation)		*22 nm/min +- 0.3nnm/min (one standard deviation)
	\|-		\|-
	!style="background:silver; color:black" align="left" valign="top"\|Etch rate uniformity		!style="background:silver; color:black" align="left" valign="top"\|Etch rate uniformity

Bghe at 14:45, 6 February 2023

2023-02-06T14:45:22Z

← Older revision		Revision as of 16:45, 6 February 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''
			<br> {{CC-bghe1}}

	==Results from the acceptance test in February 2011==		==Results from the acceptance test in February 2011==

Bghe: /* Results from the acceptance test in February 2011 */

2022-09-06T11:18:29Z

Results from the acceptance test in February 2011

← Older revision		Revision as of 13:18, 6 September 2022
Line 3:		Line 3:

	==Results from the acceptance test in February 2011==		==Results from the acceptance test in February 2011==
	'''Acceptance test for Ti etch:'''		'''Acceptance test for Ti etch :'''
	{\| border="2" cellspacing="0" cellpadding="2"		{\| border="2" cellspacing="0" cellpadding="2"
	\|-		\|-

Jmli at 15:56, 25 November 2019

2019-11-25T15:56:26Z

← Older revision		Revision as of 17:56, 25 November 2019
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''


Line 15:		Line 15:
	*50 mm SSP Si wafer		*50 mm SSP Si wafer
	*525 µm thick		*525 µm thick
	*Supplied by ~~Danchip~~		*Supplied by Nanolab
	\|.		\|.
	\|-		\|-
Line 32:		Line 32:
	!style="background:silver; color:black" align="left" valign="top"\|Features to be etched		!style="background:silver; color:black" align="left" valign="top"\|Features to be etched
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~300nm~~ - 3µm dots and lines + a square of 200µmx200µm		*300 nm - 3µm dots and lines + a square of 200µmx200µm
	\|.		\|.
	\|-		\|-
Line 43:		Line 43:
	!style="background:silver; color:black" align="left" valign="top"\|Etch rate		!style="background:silver; color:black" align="left" valign="top"\|Etch rate
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*>~~80nm~~/min		*>80 nm/min
	\|		\|
	*~~22nm~~/min +- 0.3nm/min (one standard deviation)		*22 nm/min +- 0.3nm/min (one standard deviation)
	\|-		\|-
	!style="background:silver; color:black" align="left" valign="top"\|Etch rate uniformity		!style="background:silver; color:black" align="left" valign="top"\|Etch rate uniformity
Line 78:		Line 78:
	!Ti etch acceptance		!Ti etch acceptance
	\|-		\|-
	\|~~Neutalizer~~ current [mA]		\|Neutralizer current [mA]
	\|550		\|550
	\|-		\|-

Bghe: /* Results from the acceptance test in February 2011 */

2017-12-01T09:16:28Z

Results from the acceptance test in February 2011

← Older revision		Revision as of 11:16, 1 December 2017
Line 59:		Line 59:
	*+-(0.8% +-0.5%)		*+-(0.8% +-0.5%)
	\|-		\|-
	!style="background:silver; color:black" align="left" valign="top"\|Selectivity (Au etch rate/ZEP etch rate)		!style="background:silver; color:black" align="left" valign="top"\|Selectivity (Ti etch rate/ZEP etch rate)
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*At least 1:1		*At least 1:1

Bghe at 07:29, 11 January 2016

2016-01-11T07:29:36Z

← Older revision		Revision as of 09:29, 11 January 2016
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''


	==Results from the acceptance test in February 2011==		==Results from the acceptance test in February 2011==

Bghe at 07:36, 11 October 2013

2013-10-11T07:36:41Z

← Older revision		Revision as of 09:36, 11 October 2013
Line 1:		Line 1:
			'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''

	==Results from the acceptance test in February 2011==		==Results from the acceptance test in February 2011==
	'''Acceptance test for Ti etch:'''		'''Acceptance test for Ti etch:'''

BGE at 09:50, 5 January 2012

2012-01-05T09:50:41Z

← Older revision		Revision as of 11:50, 5 January 2012
Line 73:		Line 73:
	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"
	!Parameter		!Parameter
	!Au etch acceptance		!Ti etch acceptance
	\|-		\|-
	\|Neutalizer current [mA]		\|Neutalizer current [mA]
Line 79:		Line 79:
	\|-		\|-
	\|RF Power [W]		\|RF Power [W]
	\|~~1300~~		\|1200
	\|-		\|-
	\|Beam current [mA]		\|Beam current [mA]
Line 91:		Line 91:
	\|-		\|-
	\|Ar flow to neutralizer [sccm]		\|Ar flow to neutralizer [sccm]
	\|5.0		\|6.0
	\|-		\|-
	\|Ar flow to beam [sccm]		\|Ar flow to beam [sccm]
	\|10.0		\|6.0
	\|-		\|-
	\|Rotation speed [rpm]		\|Rotation speed [rpm]
Line 100:		Line 100:
	\|-		\|-
	\|Stage angle [degrees]		\|Stage angle [degrees]
	\|30		\|20
	\|-		\|-
	\|}		\|}
Line 107:		Line 107:


	===Some SEM profile images of the etched Au===		===Some SEM profile images of the etched Ti===
	{\| border="1" cellspacing="1" cellpadding="2"		{\| border="1" cellspacing="1" cellpadding="2"
	!		!

BGE at 09:46, 5 January 2012

2012-01-05T09:46:40Z

← Older revision		Revision as of 11:46, 5 January 2012
Line 69:		Line 69:
	*~77dg @123nm		*~77dg @123nm
	\|}		\|}

			====Process parameters for the acceptance test====
			{\| border="2" cellspacing="2" cellpadding="3"
			!Parameter
			!Au etch acceptance
			\|-
			\|Neutalizer current [mA]
			\|550
			\|-
			\|RF Power [W]
			\|1300
			\|-
			\|Beam current [mA]
			\|500
			\|-
			\|Beam voltage [V]
			\|600
			\|-
			\|Beam accelerator voltage
			\|400
			\|-
			\|Ar flow to neutralizer [sccm]
			\|5.0
			\|-
			\|Ar flow to beam [sccm]
			\|10.0
			\|-
			\|Rotation speed [rpm]
			\|20
			\|-
			\|Stage angle [degrees]
			\|30
			\|-
			\|}