Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow - Revision history

Bghe at 09:15, 4 September 2025

2025-09-04T09:15:26Z

← Older revision		Revision as of 11:15, 4 September 2025
Line 3:		Line 3:
	=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=		=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=

	This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully ~~10min~~. This is important when a ~~metal~~ is to be etched as this cannot withstand plasma ashing (to remove ~~reist~~ mask) after the etch.		This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10 min. This is important when a Cr is to be etched as this cannot withstand plasma ashing (to remove the resist mask) after the etch. All though it is tested on silicon the recipe can be used ofr other material giving slightly different etch rates.

	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"

2023-02-06T13:44:05Z

← Older revision		Revision as of 15:44, 6 February 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''
			{{CC-bghe1}} <br>
	=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=		=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=

2021-08-18T12:56:36Z

← Older revision		Revision as of 14:56, 18 August 2021
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''

	=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=		=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=

2019-01-28T08:11:49Z

Etch slow (this was tested in 2012)

← Older revision		Revision as of 10:11, 28 January 2019
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''

	=Etch slow (this was tested in 2012)=		=Etch slow (this was tested in 2012 by ''bghe@nanolab'')=

	This process development ~~is going on~~ to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.		This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"

2016-01-11T07:31:27Z

Etch slow

← Older revision		Revision as of 09:31, 11 January 2016
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''

	=Etch slow=		=Etch slow (this was tested in 2012)=

	This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.		This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

2013-10-11T07:37:48Z

← Older revision		Revision as of 09:37, 11 October 2013
Line 1:		Line 1:
			'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]'''

	=Etch slow=		=Etch slow=

2013-08-27T08:44:54Z

Etch slow

← Older revision		Revision as of 10:44, 27 August 2013
Line 8:		Line 8:
	!Si etch test2		!Si etch test2
	!Si etch test3		!Si etch test3
			\|-
			!Important note
			\|
			\|This recipe must only be run for 5 min, otherwise the beam acc. current will incrase above 20
			\|
	\|-		\|-
	\|Neutalizer current [mA]		\|Neutalizer current [mA]

2012-08-01T09:50:53Z

Etch slow

← Older revision		Revision as of 11:50, 1 August 2012
Line 7:		Line 7:
	!Si etch test1		!Si etch test1
	!Si etch test2		!Si etch test2
			!Si etch test3
	\|-		\|-
	\|Neutalizer current [mA]		\|Neutalizer current [mA]
	\|450		\|450
	\|250		\|250
			\|450
	\|-		\|-
	\|RF Power [W]		\|RF Power [W]
	\|1200		\|1200
	\|1000		\|1000
			\|1200
	\|-		\|-
	\|Beam current [mA]		\|Beam current [mA]
	\|400		\|400
	\|200		\|200
			\|400
	\|-		\|-
	\|Beam voltage [V]		\|Beam voltage [V]
	\|400		\|400
	\|200		\|200
			\|400
	\|-		\|-
	\|Beam accelerator voltage		\|Beam accelerator voltage
	\|400		\|400
	\|200		\|200
			\|400
	\|-		\|-
	\|Ar flow to neutralizer [sccm]		\|Ar flow to neutralizer [sccm]
			\|6.0
	\|6.0		\|6.0
	\|6.0		\|6.0
	\|-		\|-
	\|Ar flow to beam [sccm]		\|Ar flow to beam [sccm]
			\|6.0
	\|6.0		\|6.0
	\|6.0		\|6.0
	\|-		\|-
	\|Rotation speed [rpm]		\|Rotation speed [rpm]
			\|20
	\|20		\|20
	\|20		\|20
	\|-		\|-
	\|Stage angle [degrees]		\|Stage angle [degrees]
			\|10
	\|10		\|10
	\|10		\|10
	\|-		\|-
	\|Platen temp. [dg. Celcius]		\|Platen temp. [dg. Celcius]
			\|15
	\|15		\|15
	\|15		\|15
	\|-		\|-
	\|He cooling pressure [mTorr]		\|He cooling pressure [mTorr]
			\|37.5
	\|37.5		\|37.5
	\|37.5		\|37.5
	\|-		\|-
	\|Etch material		\|Etch material
			\|Si
	\|Si		\|Si
	\|Si		\|Si
	\|-		\|-
	\|'''Results'''		\|'''Results'''
			\|'''vvv'''
	\|'''vvv'''		\|'''vvv'''
	\|'''vvv'''		\|'''vvv'''
Line 63:		Line 77:
	\|40		\|40
	\|40		\|40
			\|7:15
	\|-		\|-
	\|Etch rate in Si [nm/min]		\|Etch rate in Si [nm/min]
	\|19.7		\|19.7
	\|3.58		\|3.58
			\|19.3
	\|-		\|-
	\|Total time in Acetone + ultrasound [min]		\|Total time in Acetone + ultrasound [min]
	\|17		\|17
	\|10		\|10
			\|20
	\|-		\|-
	\|Was the resist completely removed after acetone + ultrasound?		\|Was the resist completely removed after acetone + ultrasound?
	\|no		\|no
	\|yes		\|yes
			\|yes (almost)
	\|-		\|-
	\|}		\|}

2012-07-31T09:17:01Z

Etch slow

2012-07-31T08:53:19Z

Etch slow