Specific Process Knowledge/Etch/Etching of TOPAS - Revision history

Mmat: /* Etching of TOPAS */

2025-06-03T07:55:05Z

Etching of TOPAS

← Older revision		Revision as of 09:55, 3 June 2025
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	{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"		{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
	\|+ '''TOPAS''' by khara@~~anolab~~		\|+ '''TOPAS''' by khara@nanolab
	\|-		\|-
	! Parameter		! Parameter

Bghe at 11:29, 31 March 2025

2025-03-31T11:29:27Z

← Older revision		Revision as of 13:29, 31 March 2025
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	<!--Checked for updates on 3/2-2016 - ok/jmli -->		<!--Checked for updates on 3/2-2016 - ok/jmli -->
	<!--Page reviewed by jmli 9/8-2022 -->		<!--Page reviewed by jmli 9/8-2022 -->
			<!--Page reviewed by bghe 31/3-2024 -->

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_TOPAS click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_TOPAS click here]'''

Jmli at 09:14, 9 August 2022

2022-08-09T09:14:12Z

← Older revision		Revision as of 11:14, 9 August 2022
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			<!--Page reviewed by jmli 9/8-2022 -->

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_TOPAS click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_TOPAS click here]'''

Jmli at 09:10, 9 August 2022

2022-08-09T09:10:25Z

← Older revision		Revision as of 11:10, 9 August 2022
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	<!--Checked for updates on 3/2-2016 - ok/jmli -->		<!--Checked for updates on 3/2-2016 - ok/jmli -->

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_TOPAS click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_TOPAS click here]'''
			<!--Page reviewed by jmli 9/8-2022 -->

	==Etching of TOPAS==		==Etching of TOPAS==

Jmli at 18:15, 25 November 2019

2019-11-25T18:15:41Z

← Older revision		Revision as of 20:15, 25 November 2019
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	{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"		{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
	\|+ '''TOPAS''' by khara@~~danchip~~		\|+ '''TOPAS''' by khara@anolab
	\|-		\|-
	! Parameter		! Parameter
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	==Under etching and local masking==		==Under etching and local masking==
	When etching TOPAS I have in general used a hard mask material underneath my layer of ~~photo resist~~, to ensure that if the resist was completely removed, a mask was still present. It is however always ~~recomended~~ to have a ~~photo resist~~ as mask, as a hard mask material will introduce roughness in unmask areas of the polymer.		When etching TOPAS I have in general used a hard mask material underneath my layer of photoresist, to ensure that if the resist was completely removed, a mask was still present. It is however always recommended to have a photoresist as mask, as a hard mask material will introduce roughness in unmask areas of the polymer.


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	\|[[Image:TOPAS-Al-hard-mask_U33.jpg\|200x200px]]		\|[[Image:TOPAS-Al-hard-mask_U33.jpg\|200x200px]]
	\|-		\|-
	\|style="width:200px;" \|Etch broke through the ~~photo resist~~ layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects.		\|style="width:200px;" \|Etch broke through the photoresist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects.
	\|style="width:200px;" \|The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch.		\|style="width:200px;" \|The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch.
	\|-		\|-

Bghe at 10:47, 13 August 2019

2019-08-13T10:47:35Z

← Older revision		Revision as of 12:47, 13 August 2019
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			'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_TOPAS click here]'''

	==Etching of TOPAS==		==Etching of TOPAS==

Bghe: /* Etching of TOPAS */

2017-06-14T11:20:47Z

Etching of TOPAS

← Older revision		Revision as of 13:20, 14 June 2017
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	! CO<sub>2</sub> (sccm)		! CO<sub>2</sub> (sccm) (not available anymore)
	\| 50		\| 50
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Jmli at 15:09, 3 February 2016

2016-02-03T15:09:48Z

← Older revision		Revision as of 17:09, 3 February 2016
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			<!--Checked for updates on 3/2-2016 - ok/jmli -->

	==Etching of TOPAS==		==Etching of TOPAS==
	TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.		TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.

Khara: /* Etching of TOPAS 70px */

2013-11-25T09:10:31Z

Etching of TOPAS 70px

← Older revision		Revision as of 11:10, 25 November 2013
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	==Etching of TOPAS ~~[[Image:section under construction.jpg\|70px]]~~==		==Etching of TOPAS==
	TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.		TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.

Khara at 08:51, 5 November 2013

2013-11-05T08:51:27Z

← Older revision		Revision as of 10:51, 5 November 2013
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	==Etching of TOPAS==		==Etching of TOPAS [[Image:section under construction.jpg\|70px]]==
	TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.		TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.