Specific Process Knowledge/Etch/Etching of Silicon Nitride - Revision history

Bghe: /* Comparing silicon nitride etch methods at DTU Nanolab */

2025-03-26T07:46:41Z

Comparing silicon nitride etch methods at DTU Nanolab

← Older revision		Revision as of 09:46, 26 March 2025
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	*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]		*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]
	*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE\|Etch of Silicon Nitride using AOE]]		*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE\|Etch of Silicon Nitride using AOE]]
			*[[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_ASE\|Nitride etch using ASE]]
	*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/Ion Beam Etching using IBSD Ionfab 300]]		*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/Ion Beam Etching using IBSD Ionfab 300]]

	*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride\|Silicon nitride etch using the ICP metal]]		*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride\|Silicon nitride etch using the ICP metal]]

Bghe: /* Compare the methods for Silicon Nitride etching */

2025-03-26T07:42:34Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 09:42, 26 March 2025
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	![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]		![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]
	![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]		![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]
	!Pegasus 4		![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4\|Pegasus 4]]
	![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]		![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]
	![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]		![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]

Bghe: /* Compare the methods for Silicon Nitride etching */

2025-03-26T07:40:29Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 09:40, 26 March 2025
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	![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]		![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]
	!Pegasus 4		!Pegasus 4
	![[~~index.php?title=~~Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]		![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]
	![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]		![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]
	![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]		![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]

Bghe: /* Compare the methods for Silicon Nitride etching */

2025-03-26T07:39:48Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 09:39, 26 March 2025
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	![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]		![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]
	!Pegasus 4		!Pegasus 4
			![[index.php?title=Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]
	![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]		![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]
	~~![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]~~
	![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]		![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]
	![[Specific Process Knowledge/Etch/ICP Metal Etcher\|ICP Metal]]		![[Specific Process Knowledge/Etch/ICP Metal Etcher\|ICP Metal]]
Line 50:		Line 50:
	\|		\|
	*Anisotropic etch: vertical sidewalls		*Anisotropic etch: vertical sidewalls
	*~~Primarily for samples with small amounts of metal~~		*Deep etch
	\|		\|
	*Anisotropic etch: vertical sidewalls		*Anisotropic etch: vertical sidewalls
	*~~Deep etch~~		*Primarily for samples with small amounts of metal
	\|		\|
	*Primarily for pure physical etch by sputtering with Ar-ions		*Primarily for pure physical etch by sputtering with Ar-ions
Line 87:		Line 87:
	*Silicon Nitride		*Silicon Nitride
	*Aluminium		*Aluminium
	*~~Metals~~ if ~~they cover less than 5% of the wafer area~~		*Chromium (if needed)
	\|		\|
	*Photoresist		*Photoresist
Line 95:		Line 95:
	*Silicon Nitride		*Silicon Nitride
	*Aluminium		*Aluminium
	*~~Chromium (~~if ~~needed)~~		*Metals if they cover less than 5% of the wafer area
	\|		\|
	*Any material that is accepted in the machine		*Any material that is accepted in the machine
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	*Process dependent.		*Process dependent.
	*From 0 to ~300 nm/min		*From 0 to ~300 nm/min
			\|
			*Process dependent.
			*from 0 to ~500 nm/min
	\|		\|
	*Probably between 20-300 nm/min depending on the process parameters		*Probably between 20-300 nm/min depending on the process parameters
	\|
	*Process dependent.
	*from 0 to ~500 nm/min
	\|		\|
	*Process dependent.		*Process dependent.
Line 139:		Line 139:
	*<nowiki>#</nowiki>1 100 mm wafer if bonded on a 150 mm wafer		*<nowiki>#</nowiki>1 100 mm wafer if bonded on a 150 mm wafer
	*#1 150 mm wafer		*#1 150 mm wafer
			\|
			*As many small samples as can be fitted on a 100mm wafer
			*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
			*<nowiki>#</nowiki>1 100 mm wafer
	\|		\|
	*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)		*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)
	*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)		*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
	*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)		*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)
	\|
	*As many small samples as can be fitted on a 100mm wafer
	*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
	*<nowiki>#</nowiki>1 100 mm wafer
	\|		\|
	*As many samples as can be securely fitted on a up to 200mm wafer		*As many samples as can be securely fitted on a up to 200mm wafer
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	*E-beam resists		*E-beam resists
	*DUV resists		*DUV resists
	*~~Other metals~~ if ~~they cover less than 5% of the wafer area~~		*Aluminium
			*Chromium (only for masking and on the back side if fused silica)
	*Quartz/fused silica		*Quartz/fused silica
	\|		\|
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	*E-beam resists		*E-beam resists
	*DUV resists		*DUV resists
	*~~Aluminium~~		*Other metals if they cover less than 5% of the wafer area
	*Chromium (only for masking and on the ~~back side if fused silica)~~
	*Quartz/fused silica		*Quartz/fused silica
	\|		\|

Bghe: /* Compare the methods for Silicon Nitride etching */

2025-03-26T07:39:14Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 09:39, 26 March 2025
Line 112:		Line 112:
	*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->		*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->
	\|		\|
			*Process dependent.
			*From 0 to ~300 nm/min
	\|		\|
	*Probably ~~betweeb~~ 20-300 nm/min depending on the process parameters		*Probably between 20-300 nm/min depending on the process parameters
	\|		\|
	*Process dependent.		*Process dependent.
	*~~Tested once~~ to ~~~60nm~~/min		*from 0 to ~500 nm/min
	\|		\|
	*Process dependent.		*Process dependent.

Bghe: /* Compare the methods for Silicon Nitride etching */

2025-03-26T07:36:35Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 09:36, 26 March 2025
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	*Blue film		*Blue film
	\|		\|
			*Silicon
			*Silicon Oxide
			*Silicon Nitride
			*Silicon Oxynitride
			*Photoresist
			*E-beam resists
			*DUV resists
			*Aluminium (only for masking
			*Chromium (only for masking and on the back side if fused silica)
			*Quartz/fused silica
	\|		\|
	*Silicon		*Silicon
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	*DUV resists		*DUV resists
	*Aluminium		*Aluminium
	*Chromium (~~try to avoid it~~)		*Chromium (only for masking and on the back side if fused silica)
	*Quartz/fused silica		*Quartz/fused silica
	\|		\|

Bghe: /* Compare the methods for Silicon Nitride etching */

2025-03-26T07:35:00Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 09:35, 26 March 2025
Line 26:		Line 26:
	![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]		![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]
	![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]		![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]
			!Pegasus 4
	![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]		![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]
	![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]		![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]
Line 43:		Line 44:
	*Isotropic etch		*Isotropic etch
	*Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly		*Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
			\|

			* Anisotropic etch: vertical sidewalls
			* With cassette loader for batch processing.
	\|		\|
	*Anisotropic etch: vertical sidewalls		*Anisotropic etch: vertical sidewalls
			*Primarily for samples with small amounts of metal
	\|		\|
	*Anisotropic etch: vertical sidewalls		*Anisotropic etch: vertical sidewalls
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	*PolySilicon		*PolySilicon
	*Blue film		*Blue film
			\|
			*Photoresist
			*DUV resist
			*E-beam resist
			*Silicon Oxide
			*Silicon Nitride
			*Aluminium
			*Chromium (if needed)
	\|		\|
	*Photoresist		*Photoresist
Line 81:		Line 95:
	*Silicon Nitride		*Silicon Nitride
	*Aluminium		*Aluminium
	*Chromium (~~please try to avoid it~~)		*Chromium (if needed)
	\|		\|
	*Any material that is accepted in the machine		*Any material that is accepted in the machine
Line 97:		Line 111:
	*PECVD nitride: ~40.0-100.0 nm/min		*PECVD nitride: ~40.0-100.0 nm/min
	*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->		*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->
			\|
	\|		\|
	*Probably betweeb 20-300 nm/min depending on the process parameters		*Probably betweeb 20-300 nm/min depending on the process parameters
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	\|		\|
	*<nowiki>#</nowiki>1-25 4"-6" wafers		*<nowiki>#</nowiki>1-25 4"-6" wafers
			\|
			*As many small samples as can be bonded on a 150mm wafer
			*50 mm wafers if bonded on a 150mm wafer
			*<nowiki>#</nowiki>1 100 mm wafer if bonded on a 150 mm wafer
			*#1 150 mm wafer
	\|		\|
	*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)		*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)
Line 125:		Line 145:
	*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer		*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
	*<nowiki>#</nowiki>1 100 mm wafer		*<nowiki>#</nowiki>1 100 mm wafer
	*<nowiki>#</nowiki>1 150 mm wafers (only RIE2 when set up to 150mm)
	\|		\|
	*As many samples as can be securely fitted on a up to 200mm wafer		*As many samples as can be securely fitted on a up to 200mm wafer
Line 150:		Line 169:
	*Photoresist		*Photoresist
	*Blue film		*Blue film
			\|
	\|		\|
	*Silicon		*Silicon

Bghe: /* Compare the methods for Silicon Nitride etching */

2025-03-26T07:28:26Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 09:28, 26 March 2025
Line 52:		Line 52:
	\|		\|
	*Anisotropic etch: vertical sidewalls		*Anisotropic etch: vertical sidewalls
			*Primarily for Cl/Br etch chemistry.
			*F-chemistry, please use AOE or Pegasus 4.
	\|-		\|-

Kabi: /* Compare the methods for Silicon Nitride etching */

2023-02-14T10:18:06Z

Compare the methods for Silicon Nitride etching

← Older revision		Revision as of 12:18, 14 February 2023
Line 94:		Line 94:
	\|		\|
	*PECVD nitride: ~40.0-100.0 nm/min		*PECVD nitride: ~40.0-100.0 nm/min
	*Stoichiometric LPCVD nitride: ~0.65-8 nm/min (''Yannick Seis, KU, 2019'')		*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->
	\|		\|
	*Probably betweeb 20-300 nm/min depending on the process parameters		*Probably betweeb 20-300 nm/min depending on the process parameters

Rkch at 15:07, 6 February 2023

2023-02-06T15:07:47Z

← Older revision		Revision as of 17:07, 6 February 2023
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← Older revision		Revision as of 09:46, 26 March 2025
Line 13:		Line 13:
	*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]		*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]
	*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE\|Etch of Silicon Nitride using AOE]]		*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE\|Etch of Silicon Nitride using AOE]]
			*[[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_ASE\|Nitride etch using ASE]]
	*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/Ion Beam Etching using IBSD Ionfab 300]]		*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/Ion Beam Etching using IBSD Ionfab 300]]

	*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride\|Silicon nitride etch using the ICP metal]]		*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride\|Silicon nitride etch using the ICP metal]]

← Older revision		Revision as of 09:42, 26 March 2025
Line 26:		Line 26:
	![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]		![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch\|Wet Silicon Nitride Etch]]
	![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]		![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]
	!Pegasus 4		![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4\|Pegasus 4]]
	![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]		![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]
	![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]		![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]

← Older revision		Revision as of 09:40, 26 March 2025
Line 27:		Line 27:
	![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]		![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|BHF]]
	!Pegasus 4		!Pegasus 4
	![[~~index.php?title=~~Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]		![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE (Advanced Oxide Etch)]]
	![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]		![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)\|ASE]]
	![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]		![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]