Specific Process Knowledge/Etch/Etching of SU-8 - Revision history

Bghe at 11:32, 31 March 2025

2025-03-31T11:32:25Z

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	<!--Page reviewed by jmli 9/8-2022 -->		<!--Page reviewed by jmli 9/8-2022 -->
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	==Etching of SU-8==		==Etching of SU-8==

2022-08-09T09:09:55Z

← Older revision		Revision as of 11:09, 9 August 2022
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	==Etching of SU-8==		==Etching of SU-8==

2019-11-25T18:15:01Z

← Older revision		Revision as of 20:15, 25 November 2019
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	{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"		{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
	\|+ '''SU8aniso and SU8iso etches''' by khara@~~danchip~~		\|+ '''SU8aniso and SU8iso etches''' by khara@nanolab
	\|-		\|-
	! Parameter		! Parameter

2018-07-30T11:44:19Z

← Older revision		Revision as of 13:44, 30 July 2018
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	==Etching of SU-8==		==Etching of SU-8==

2016-02-03T15:10:08Z

← Older revision		Revision as of 17:10, 3 February 2016
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			<!--Checked for updates on 3/2-2016 - ok/jmli -->

	==Etching of SU-8==		==Etching of SU-8==
	SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.		SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.

2013-11-25T09:10:48Z

Etching of SU-8 70px

← Older revision		Revision as of 11:10, 25 November 2013
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	==Etching of SU-8 ~~[[Image:section under construction.jpg\|70px]]~~==		==Etching of SU-8==
	SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.		SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.

2013-11-25T09:10:05Z

Etching of SU-8 70px

← Older revision		Revision as of 11:10, 25 November 2013
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	==Etching of SU-8 [[Image:section under construction.jpg\|70px]]==		==Etching of SU-8 [[Image:section under construction.jpg\|70px]]==
	SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of ~~pattern~~ defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.		SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.

	* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8		* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8

2013-11-05T08:51:13Z

← Older revision		Revision as of 10:51, 5 November 2013
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	==Etching of SU-8==		==Etching of SU-8 [[Image:section under construction.jpg\|70px]]==
	SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.		SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.

2013-11-04T10:31:37Z

← Older revision	Revision as of 12:31, 4 November 2013
(No difference)

2013-11-04T08:30:56Z

Roughness and antimony effects in SU-8 etching

← Older revision		Revision as of 10:30, 4 November 2013
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	{\| border="1" cellspacing="1" cellpadding="2" align="left"		{\| border="1" cellspacing="1" cellpadding="2" align="left"
			! SU-8 lines by lithography
	! Oxygen etch		! Oxygen etch
	! SU8aniso		! SU8aniso
	! SU8iso		! SU8iso
	\|-		\|-
			\|[[Image:SU8-noetch Q13.jpg\|200x200px]]
	\|[[Image:SU8-oxygen-etch_Q12.jpg\|200x200px]]		\|[[Image:SU8-oxygen-etch_Q12.jpg\|200x200px]]
	\|[[Image:SU8-SU8aniso_R15.jpg\|200x200px]]		\|[[Image:SU8-SU8aniso_R15.jpg\|200x200px]]
	\|[[Image:SU8-SU8iso_R13.jpg\|200x200px]]		\|[[Image:SU8-SU8iso_R13.jpg\|200x200px]]
	\|-		\|-
			\|No etching
	\|Etch		\|Etch
	*O<sub>2</sub> flow [sccm]:99		*O<sub>2</sub> flow [sccm]:99