Specific Process Knowledge/Etch/Etching of Chromium - Revision history

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-08T08:33:57Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 10:33, 8 April 2026
Line 36:		Line 36:
	\|Dry plasma etch of Cr		\|Dry plasma etch of Cr
	\|Sputtering of Cr - pure physical etch		\|Sputtering of Cr - pure physical etch
	\|Primarily shallow etching of silicon but also thin layers of SiO2, TaO2 and Cr		\|Primarily shallow dry etching of silicon but also thin layers of SiO2, TaO2 and Cr
	\|-		\|-

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T12:31:26Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 14:31, 7 April 2026
Line 17:		Line 17:

	==Comparison of Chromium Etch Methods==		==Comparison of Chromium Etch Methods==

	~~{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"~~
	\|-

	\|-
	~~\|-style="background:silver; color:black"~~
	!
	~~![[Specific Process Knowledge/Etch/Wet Chromium Etch\|Cr wet etch]]~~
	~~![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher\|ICP metal]]~~
	~~![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE (Ionfab300+)]]~~
	\|-

	\|-
	~~\|-style="background:WhiteSmoke; color:black"~~
	~~!Generel description~~
	~~\|Wet etch of Cr premixed (Chrome etch 18)~~
	~~\|Dry plasma etch of Cr~~
	~~\|Sputtering of Cr - pure physical etch~~
	\|-

	\|-
	~~\|-style="background:LightGrey; color:black"~~
	~~!Etch rate range~~
	\|
	*~150nm/min at room temperature
	\|
	*~14 nm/min (depending on features size and etch load)
	\|
	*~30nm/min (not tested yet)
	\|-

	\|-
	~~\|-style="background:WhiteSmoke; color:black"~~
	~~!Etch profile~~
	\|
	*Isotropic
	\|
	*Anisotropic (vertical sidewalls)
	\|
	*Anisotropic (angles sidewalls, typical around 70 dg)
	\|-


	\|-
	~~\|-style="background:LightGrey; color:black"~~
	~~!Substrate size~~
	\|
	*Any size and number that can go inside the beaker in use
	\|
	* 150 mm wafers
	* Smaller wafers or pieces on a 150 mm carrier wafer
	\|
	~~Smaller pieces glued to carrier wafer~~
	*<nowiki>#</nowiki>1 50mm wafer
	*<nowiki>#</nowiki>1 100mm wafer
	*<nowiki>#</nowiki>1 150mm wafer
	*<nowiki>#</nowiki>1 200mm wafer
	\|-

	\|-
	~~\|-style="background:WhiteSmoke; color:black"~~
	~~!Allowed materials~~
	\|
	~~No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals~~
	\|
	*Silicon
	*Quartz/fused silica
	*Photoresist/e-beam resist
	*PolySilicon,
	*Silicon oxide
	*Silicon (oxy)nitride
	*Aluminium
	*Titanium
	*Chromium
	\|
	*Silicon
	*Silicon oxides
	*Silicon nitrides
	*Metals from the +list
	*Metals from the -list
	*Alloys from the above list
	*Stainless steel
	*Glass
	*III-V materials
	*Resists
	*Polymers
	*Capton tape
	\|-

	\|}


	~~===Comparison of Chromium Etch Methods===~~

	{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T12:30:54Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 14:30, 7 April 2026
Line 168:		Line 168:
	\|		\|
	Smaller pieces glued to carrier wafer		Smaller pieces glued to carrier wafer
	*~~<nowiki>#</nowiki>1~~ 50mm wafer		* 50mm wafer
	*~~<nowiki>#</nowiki>1~~ 100mm wafer		* 100mm wafer
	*~~<nowiki>#</nowiki>1~~ 150mm wafer		* 150mm wafer
	*~~<nowiki>#</nowiki>1~~ 200mm wafer		* 200mm wafer
	\|		\|
	* 150mm wafer		* 150mm wafer
Line 205:		Line 205:
	*Polymers		*Polymers
	*Capton tape		*Capton tape
			\|
			* Silicon
			* Silicon oxides
			* Silicon nitrides
			* Thin layers of Cr, TaO2
	\|-		\|-

	\|}		\|}

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T12:02:29Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 14:02, 7 April 2026
Line 164:		Line 164:
	*Any size and number that can go inside the beaker in use		*Any size and number that can go inside the beaker in use
	\|		\|
	*~~smaller~~ pieces on a carrier wafer		* 150 mm wafers
	*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)		* Smaller wafers or pieces on a 150 mm carrier wafer
	*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
	\|		\|
	Smaller pieces glued to carrier wafer		Smaller pieces glued to carrier wafer
Line 174:		Line 173:
	*<nowiki>#</nowiki>1 200mm wafer		*<nowiki>#</nowiki>1 200mm wafer
	\|		\|
	*~~<nowiki>#</nowiki>1~~ 150mm wafer		* 150mm wafer
	*~~<nowiki>#</nowiki>1~~ Smaller pieces on 150mm carrier		* Smaller wafers or pieces on 150mm carrier
	\|-		\|-

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T12:00:11Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 14:00, 7 April 2026
Line 66:		Line 66:
	*Any size and number that can go inside the beaker in use		*Any size and number that can go inside the beaker in use
	\|		\|
	*~~smaller~~ pieces on a carrier wafer		* 150 mm wafers
	*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)		* Smaller wafers or pieces on a 150 mm carrier wafer
	*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
	\|		\|
	Smaller pieces glued to carrier wafer		Smaller pieces glued to carrier wafer

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T11:48:54Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 13:48, 7 April 2026
Line 175:		Line 175:
	*<nowiki>#</nowiki>1 200mm wafer		*<nowiki>#</nowiki>1 200mm wafer
	\|		\|
			*<nowiki>#</nowiki>1 150mm wafer
			*<nowiki>#</nowiki>1 Smaller pieces on 150mm carrier

	\|-		\|-

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T11:43:41Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 13:43, 7 April 2026
Line 121:		Line 121:
	![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher\|ICP metal]]		![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher\|ICP metal]]
	![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE (Ionfab300+)]]		![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE (Ionfab300+)]]
	![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2\|Pegasus 2]]		![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2\|DRIE-Pegasus 2]]
	\|-		\|-

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T11:43:09Z

Comparison of Chromium Etch Methods

← Older revision		Revision as of 13:43, 7 April 2026
Line 121:		Line 121:
	![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher\|ICP metal]]		![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher\|ICP metal]]
	![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE (Ionfab300+)]]		![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE (Ionfab300+)]]
	![[Specific_Process_Knowledge/Etch/DRIE/Pegasus/Pegasus-2\|Pegasus 2]]		![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2\|Pegasus 2]]
	\|-		\|-

Jmli: /* Comparison of Chromium Etch Methods */

2026-04-07T11:01:50Z

Comparison of Chromium Etch Methods

@@ Line 75: / Line 75: @@
 *<nowiki>#</nowiki>1 150mm wafer
 *<nowiki>#</nowiki>1 200mm wafer
 |-

Rkch at 14:47, 6 February 2023

2023-02-06T14:47:08Z

← Older revision		Revision as of 16:47, 6 February 2023
Line 1:		Line 1:
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