Specific Process Knowledge/Etch/Etching of Bulk Glass - Revision history

Bghe: /* Comparing methods for etching bulk glass at DTU Nanolab */

2025-09-04T14:06:49Z

Comparing methods for etching bulk glass at DTU Nanolab

← Older revision		Revision as of 16:06, 4 September 2025
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	== Comparing methods for etching bulk glass at DTU Nanolab ==		== Comparing methods for etching bulk glass at DTU Nanolab ==

	Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]] or Pegasus 4 using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.		Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]], ASE or Pegasus 4 using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.

	At DTU Nanolab, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).		At DTU Nanolab, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).

Bghe: /* Comparing methods for etching bulk glass at DTU Nanolab */

2025-09-04T14:05:49Z

Comparing methods for etching bulk glass at DTU Nanolab

← Older revision		Revision as of 16:05, 4 September 2025
Line 8:		Line 8:
	== Comparing methods for etching bulk glass at DTU Nanolab ==		== Comparing methods for etching bulk glass at DTU Nanolab ==

	Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]] using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.		Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]] or Pegasus 4 using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.

	At DTU Nanolab, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).		At DTU Nanolab, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).

Rkch at 14:39, 6 February 2023

2023-02-06T14:39:00Z

← Older revision		Revision as of 16:39, 6 February 2023
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Rkch: /* Compare the methods for bulk glass etching */

2021-10-19T12:44:16Z

Compare the methods for bulk glass etching

← Older revision		Revision as of 14:44, 19 October 2021
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	\|		\|
	*~75 nm/min (Thermal oxide) in BHF		*~75 nm/min (Thermal oxide) in BHF
	*~90 nm/min (Thermal oxide) in ~~SIO Etch~~		*~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant
	*~25 nm/min (Thermal oxide) in 5%HF		*~25 nm/min (Thermal oxide) in 5%HF
	*~3-4µm/min in 40%HF		*~3-4µm/min in 40%HF

Jmli: /* Comparing methods for etching bulk glass at Danchip */

2019-11-25T14:54:19Z

Comparing methods for etching bulk glass at Danchip

← Older revision		Revision as of 16:54, 25 November 2019
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	<!-- Replace "http://labadviser.nanolab.dtu.dk/..." with the link to the Labadviser page-->		<!-- Replace "http://labadviser.nanolab.dtu.dk/..." with the link to the Labadviser page-->

	== Comparing methods for etching bulk glass at ~~Danchip~~ ==		== Comparing methods for etching bulk glass at DTU Nanolab ==

	Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]] using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.		Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]] using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.

Jmli at 14:53, 25 November 2019

2019-11-25T14:53:34Z

← Older revision		Revision as of 16:53, 25 November 2019
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Bulk_Glass click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Bulk_Glass click here]'''
	<!-- Replace "http://labadviser.~~danchip~~.dtu.dk/..." with the link to the Labadviser page-->		<!-- Replace "http://labadviser.nanolab.dtu.dk/..." with the link to the Labadviser page-->

	== Comparing methods for etching bulk glass at Danchip ==		== Comparing methods for etching bulk glass at Danchip ==

	Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]] using ~~Flourine~~ chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using ~~flourine~~ chemistry.		Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)\|AOE]] using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.

	At ~~Danchip~~, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).		At DTU Nanolab, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).
	The set-up consists of a 5L ~~plasic~~ beaker placed on a stirring plate (magnetic stirring) and a special horizontal wafer holder. Normally a 40% pre-mixed HF solution is used.		The set-up consists of a 5L plastic beaker placed on a stirring plate (magnetic stirring) and a special horizontal wafer holder. Normally a 40% pre-mixed HF solution is used.

	Masking materials and pre-treatment of the glass surface prior to the deposition of the masking material is a special concern in particular for deep etching (> 10µm).		Masking materials and pre-treatment of the glass surface prior to the deposition of the masking material is a special concern in particular for deep etching (> 10µm).
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	Due to the high cleanliness fused silica is allowed access to basically all machines meaning that e.g. LPCVD silicon can be deposited as masking material. This is an excellent mask even for quite deep etches.		Due to the high cleanliness fused silica is allowed access to basically all machines meaning that e.g. LPCVD silicon can be deposited as masking material. This is an excellent mask even for quite deep etches.

	Regarding borosilicate glass masking is more tricky. Sputtered Si, Cr or Cr/Au can be used. It is a ~~challange~~ to avoid delamination, pinholes and cracks in the masking material.		Regarding borosilicate glass masking is more tricky. Sputtered Si, Cr or Cr/Au can be used. It is a challenge to avoid delamination, pinholes and cracks in the masking material.


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	*Process dependent		*Process dependent
	*Expected range: ~ less than ~~20nm~~/min - ~~~200nm~~/min		*Expected range: ~ less than 20 nm/min - ~200 nm/min
	\|		\|
	*Process dependent		*Process dependent
	*Expected range: ~ less than ~~230nm~~/min - ~~~550nm~~/min		*Expected range: ~ less than 230 nm/min - ~550 nm/min
	\|		\|
	*Process dependent		*Process dependent
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	!Substrate size		!Substrate size
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	*<nowiki>#</nowiki>1-25 ~~100mm~~ wafers in our 100mm bath		*<nowiki>#</nowiki>1-25 100 mm wafers in our 100mm bath
	*What can be fitted in a plastic beaker		*What can be fitted in a plastic beaker
	\|		\|

Bghe: /* Compare the methods for bulk glass etching */

2018-05-07T13:42:43Z

Compare the methods for bulk glass etching

← Older revision		Revision as of 15:42, 7 May 2018
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	*DUV resist		*DUV resist
	*E-beam resist		*E-beam resist
	*Other metals if they cover less than 5% of the wafer area ~~(ONLY RIE2!)~~		*Other metals if they cover less than 5% of the wafer area
	*Quartz/fused silica		*Quartz/fused silica
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Bghe: /* Compare the methods for bulk glass etching */

2018-05-07T13:42:27Z

Compare the methods for bulk glass etching

← Older revision		Revision as of 15:42, 7 May 2018
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	*What can be fitted in a plastic beaker		*What can be fitted in a plastic beaker
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	*As many small samples as can be fitted on the 100mm carrier.		*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!)
	*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)		*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
	*<nowiki>#</nowiki>1 150mm wafer (only ~~RIE2~~ when set up for 150mm)		*<nowiki>#</nowiki>1 150mm wafer (only when set up for 150mm)
	\|		\|
	*As many small samples as can be fitted on a 100mm wafer		*As many small samples as can be fitted on a 100mm wafer

Bghe: /* Compare the methods for bulk glass etching */

2018-05-07T13:41:44Z

Compare the methods for bulk glass etching

← Older revision		Revision as of 15:41, 7 May 2018
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	*Process dependent		*Process dependent
	*Expected range: ~ less than 20nm/min - ~~~120nm~~/min		*Expected range: ~ less than 20nm/min - ~200nm/min
	\|		\|
	*Process dependent		*Process dependent

Bghe: /* Compare the methods for bulk glass etching */

2018-05-07T13:41:15Z

Compare the methods for bulk glass etching

← Older revision		Revision as of 15:41, 7 May 2018
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	*(Poly)Silicon		*(Poly)Silicon
	*Silicon Nitride		*Silicon Nitride
	*Metals if they cover less than 5% of the wafer area ~~(ONLY RIE2!)~~		*Metals if they cover less than 5% of the wafer area
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	*Photoresist		*Photoresist