Specific Process Knowledge/Etch/DryEtchProcessing/Comparison - Revision history

Bghe at 09:58, 2 February 2026

2026-02-02T09:58:14Z

← Older revision		Revision as of 11:58, 2 February 2026
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	\|- valign="top"		\|- valign="top"
	! style="background:lightgrey; color:black" \| Alternative or backup uses		! style="background:lightgrey; color:black" \| Alternative or backup uses
	\| style="background:lightgrey; color:black" \| ~~Backup silicon etcher~~		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" colspan="2"\|		\| style="background:lightgrey; color:black" colspan="2"\|
	\| style="background:lightgrey; color:black" \| ~~Silicon etcher~~		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|

Bghe: /* Hardware and option comparison of the dry etchers */

2026-01-15T12:23:23Z

Hardware and option comparison of the dry etchers

← Older revision		Revision as of 14:23, 15 January 2026
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	! style="background:silver; color:black" colspan="4" align="center"\| [[Specific Process Knowledge/Etch/DRIE-Pegasus\| DRIE-Pegasi]]		! style="background:silver; color:black" colspan="4" align="center"\| [[Specific Process Knowledge/Etch/DRIE-Pegasus\| DRIE-Pegasi]]
	! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher\| ICP Metal etch ]]		! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher\| ICP Metal etch ]]
	~~! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/III-V RIE \|III-V RIE ]]~~
	! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]		! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]
	! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]		! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]
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	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!		\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!
	~~\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates~~
	\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.		\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.
	Etching of SiO2 and SiN on III-V materials		Etching of SiO2 and SiN on III-V materials
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	\| style="background:lightgrey; color:black" \| Backup silicon etcher		\| style="background:lightgrey; color:black" \| Backup silicon etcher
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \| ~~Barc etch~~		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" colspan="2"\|		\| style="background:lightgrey; color:black" colspan="2"\|
	\| style="background:lightgrey; color:black" \| Silicon etcher		\| style="background:lightgrey; color:black" \| Silicon etcher
	~~\| style="background:lightgrey; color:black" \|~~
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
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	\| style="background:WhiteSmoke; color:black" colspan="4" \| Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator		\| style="background:WhiteSmoke; color:black" colspan="4" \| Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
	\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator		\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator
	~~\| style="background:WhiteSmoke; color:black" \| Parallel plate capacitor setup with RF power between the two electrodes~~
	\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator		\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator
	\| style="background:WhiteSmoke; color:black" \| Ion beam etcher - sputter etches with argon ions		\| style="background:WhiteSmoke; color:black" \| Ion beam etcher - sputter etches with argon ions
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	\| style="background:lightgrey; color:black" colspan="4" \| The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C		\| style="background:lightgrey; color:black" colspan="4" \| The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C
	\| style="background:lightgrey; color:black" \| The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C		\| style="background:lightgrey; color:black" \| The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C
	~~\| style="background:lightgrey; color:black" \| The electrode is oil cooled: Fixed at 20<sup>o</sup>C~~
	\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C		\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C
	\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C		\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C
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	\| style="background:WhiteSmoke; color:black" colspan="3" \| Electrostatic clamping (TDESC)<br> Wafer size 6"		\| style="background:WhiteSmoke; color:black" colspan="3" \| Electrostatic clamping (TDESC)<br> Wafer size 6"
	\| style="background:WhiteSmoke; color:black" \| Electrostatic clamping (TDESC)<br> Wafer size 6"		\| style="background:WhiteSmoke; color:black" \| Electrostatic clamping (TDESC)<br> Wafer size 6"
	~~\| style="background:WhiteSmoke; color:black" \| No clamping<br> Sample size up to 4"~~
	\| style="background:WhiteSmoke; color:black" \| Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4"		\| style="background:WhiteSmoke; color:black" \| Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4"
	\| style="background:WhiteSmoke; color:black" \| Mechanical clamping <br> Wafer sizes 2"/4"/6"/8"		\| style="background:WhiteSmoke; color:black" \| Mechanical clamping <br> Wafer sizes 2"/4"/6"/8"
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	\| HBr		\| HBr

	\|}
	~~\| style="background:lightgrey; color:black" \|~~
	{\|
	~~\| O<sub>2</sub>~~
	~~\| CHF<sub>3</sub>~~
	~~\| CH<sub>4</sub>~~
	\|-
	~~\| Ar~~
	~~\| H<sub>2</sub>~~
	\|}		\|}
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
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	* Coil generator		* Coil generator
	* Platen generator		* Platen generator
	~~\| style="background:WhiteSmoke; color:black" \|~~
	* RF generator
	\| style="background:WhiteSmoke; color:black" \|		\| style="background:WhiteSmoke; color:black" \|
	* Coil generator		* Coil generator
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	\| style="background:lightgrey; color:black" colspan="2"\| Loading via two cassette loading stations pumped down at vacuum		\| style="background:lightgrey; color:black" colspan="2"\| Loading via two cassette loading stations pumped down at vacuum
	\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock		\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock
	~~\| style="background:lightgrey; color:black" \| Manual loading directly into process chamber~~
	\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock		\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock
	\| style="background:lightgrey; color:black" \| Automatic loading via load lock		\| style="background:lightgrey; color:black" \| Automatic loading via load lock
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	* Parameter ramping		* Parameter ramping
	* Optical endpoint detection		* Optical endpoint detection
	~~\| style="background:WhiteSmoke; color:black" \|~~
	* Laser endpoint detection
	\| style="background:WhiteSmoke; color:black" \|		\| style="background:WhiteSmoke; color:black" \|
	* Parameter ramping		* Parameter ramping
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	* Al, Cr, Ti, W, Mo, Nb		* Al, Cr, Ti, W, Mo, Nb
	* Resists		* Resists
	~~\| style="background:lightgrey; color:black" \|~~
	* Silicon, Silicon oxide, silicon nitride
	* Fused silica
	* Sapphire
	* SiC
	* GaAs, GaN, InP, with epitaxial layers
	* Resists (at low temperature processing)
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	* Silicon, Silicon oxide, silicon nitride		* Silicon, Silicon oxide, silicon nitride
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	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link]
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link]
	~~\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=155 Link]~~
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link]
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link]
	\|-		\|-
	\|}		\|}

Bghe at 12:15, 15 January 2026

2026-01-15T12:15:07Z

← Older revision		Revision as of 14:15, 15 January 2026
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	\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!		\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
	\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs		\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.
			Etching of SiO2 and SiN on III-V materials
	\| style="background:WhiteSmoke; color:black"\| Physical Etching of all materials		\| style="background:WhiteSmoke; color:black"\| Physical Etching of all materials
	\|- valign="top"		\|- valign="top"

Bghe at 12:08, 18 November 2024

2024-11-18T12:08:11Z

← Older revision		Revision as of 14:08, 18 November 2024
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	\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo		\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
	\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs		\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs

Jmli: /* Hardware and option comparison of the dry etchers */

2023-12-21T13:35:59Z

Hardware and option comparison of the dry etchers

← Older revision		Revision as of 15:35, 21 December 2023
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	* Coil generator		* Coil generator
	* Platen generator		* Platen generator
	\| style="background:WhiteSmoke; color:black" colspan="4"\|		\| style="background:WhiteSmoke; color:black"\|
			* Coil generator
			* Platen generator
			* Low frequency platen generator
			\| style="background:WhiteSmoke; color:black"\|
			* Platen generator
			* Low frequency platen generator
			\| style="background:WhiteSmoke; color:black" colspan="2"\|
	* Coil generator		* Coil generator
	* Platen generator		* Platen generator

Jmli: /* Hardware and option comparison of the dry etchers */

2023-12-21T13:33:40Z

Hardware and option comparison of the dry etchers

@@ Line 103: / Line 103: @@
 | He
 |}
-|style="background:lightgrey; color:black" colspan="3" |
+|style="background:lightgrey; color:black" |
 {|
 | SF<sub>6</sub>

Jmli at 10:57, 3 February 2023

2023-02-03T10:57:05Z

← Older revision		Revision as of 12:57, 3 February 2023
Line 3:		Line 3:

	== Hardware and option comparison of the dry etchers ==		== Hardware and option comparison of the dry etchers ==
			{{Template:Contentbydryetch}}
			<!--Checked for updates on 3/2-2023 - ok/jmli -->

	The table below compares the hardware and the options.		The table below compares the hardware and the options.

Bghe at 08:15, 2 December 2021

2021-12-02T08:15:53Z

← Older revision		Revision as of 10:15, 2 December 2021
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	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 4" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 4" wafers
	\| style="background:WhiteSmoke; color:black"\| Silicon etching of 4" wafers		\| style="background:WhiteSmoke; color:black"\| Silicon etching of 4" wafers
	\| style="background:WhiteSmoke; color:black"\| Research tool into silicon etching		\| style="background:WhiteSmoke; color:black"\| Research tool into silicon etching - only a few special recipes!
	\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers

Jmli: /* Hardware and option comparison of the dry etchers */

2021-11-03T10:50:11Z

Hardware and option comparison of the dry etchers

← Older revision		Revision as of 12:50, 3 November 2021
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	\| style="background:WhiteSmoke; color:black"\| Research tool into silicon etching		\| style="background:WhiteSmoke; color:black"\| Research tool into silicon etching
	\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo		\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates

Jmli: /* Hardware and option comparison of the dry etchers */

2020-08-14T06:43:26Z

Hardware and option comparison of the dry etchers

← Older revision		Revision as of 08:43, 14 August 2020
Line 288:		Line 288:
	* Almost any material		* Almost any material
	\|-		\|-
	! style="background:~~Whitesmoke~~; color:black" \| Cross contamination sheet		! style="background:WhiteSmoke; color:black" \| Cross contamination sheet
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=105 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=105 Link]
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=115 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=115 Link]

← Older revision		Revision as of 11:58, 2 February 2026
Line 38:		Line 38:
	\|- valign="top"		\|- valign="top"
	! style="background:lightgrey; color:black" \| Alternative or backup uses		! style="background:lightgrey; color:black" \| Alternative or backup uses
	\| style="background:lightgrey; color:black" \| ~~Backup silicon etcher~~		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" colspan="2"\|		\| style="background:lightgrey; color:black" colspan="2"\|
	\| style="background:lightgrey; color:black" \| ~~Silicon etcher~~		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|

← Older revision		Revision as of 14:23, 15 January 2026
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	! style="background:silver; color:black" colspan="4" align="center"\| [[Specific Process Knowledge/Etch/DRIE-Pegasus\| DRIE-Pegasi]]		! style="background:silver; color:black" colspan="4" align="center"\| [[Specific Process Knowledge/Etch/DRIE-Pegasus\| DRIE-Pegasi]]
	! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher\| ICP Metal etch ]]		! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher\| ICP Metal etch ]]
	~~! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/III-V RIE \|III-V RIE ]]~~
	! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]		! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/III-V ICP\|III-V ICP]]
	! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]		! style="background:silver; color:black" rowspan="2" align="center"\| [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE/IBSD Ionfab 300]]
Line 34:		Line 33:
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!		\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!
	~~\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates~~
	\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.		\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.
	Etching of SiO2 and SiN on III-V materials		Etching of SiO2 and SiN on III-V materials
Line 42:		Line 40:
	\| style="background:lightgrey; color:black" \| Backup silicon etcher		\| style="background:lightgrey; color:black" \| Backup silicon etcher
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \| ~~Barc etch~~		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" colspan="2"\|		\| style="background:lightgrey; color:black" colspan="2"\|
	\| style="background:lightgrey; color:black" \| Silicon etcher		\| style="background:lightgrey; color:black" \| Silicon etcher
	~~\| style="background:lightgrey; color:black" \|~~
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
Line 56:		Line 53:
	\| style="background:WhiteSmoke; color:black" colspan="4" \| Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator		\| style="background:WhiteSmoke; color:black" colspan="4" \| Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
	\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator		\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator
	~~\| style="background:WhiteSmoke; color:black" \| Parallel plate capacitor setup with RF power between the two electrodes~~
	\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator		\| style="background:WhiteSmoke; color:black" \| Inductively coupled plasma chamber with two RF generators; the coil and platen generator
	\| style="background:WhiteSmoke; color:black" \| Ion beam etcher - sputter etches with argon ions		\| style="background:WhiteSmoke; color:black" \| Ion beam etcher - sputter etches with argon ions
Line 66:		Line 62:
	\| style="background:lightgrey; color:black" colspan="4" \| The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C		\| style="background:lightgrey; color:black" colspan="4" \| The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C
	\| style="background:lightgrey; color:black" \| The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C		\| style="background:lightgrey; color:black" \| The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C
	~~\| style="background:lightgrey; color:black" \| The electrode is oil cooled: Fixed at 20<sup>o</sup>C~~
	\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C		\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C
	\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C		\| style="background:lightgrey; color:black" \| The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C
Line 77:		Line 72:
	\| style="background:WhiteSmoke; color:black" colspan="3" \| Electrostatic clamping (TDESC)<br> Wafer size 6"		\| style="background:WhiteSmoke; color:black" colspan="3" \| Electrostatic clamping (TDESC)<br> Wafer size 6"
	\| style="background:WhiteSmoke; color:black" \| Electrostatic clamping (TDESC)<br> Wafer size 6"		\| style="background:WhiteSmoke; color:black" \| Electrostatic clamping (TDESC)<br> Wafer size 6"
	~~\| style="background:WhiteSmoke; color:black" \| No clamping<br> Sample size up to 4"~~
	\| style="background:WhiteSmoke; color:black" \| Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4"		\| style="background:WhiteSmoke; color:black" \| Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4"
	\| style="background:WhiteSmoke; color:black" \| Mechanical clamping <br> Wafer sizes 2"/4"/6"/8"		\| style="background:WhiteSmoke; color:black" \| Mechanical clamping <br> Wafer sizes 2"/4"/6"/8"
Line 154:		Line 148:
	\| HBr		\| HBr

	\|}
	~~\| style="background:lightgrey; color:black" \|~~
	{\|
	~~\| O<sub>2</sub>~~
	~~\| CHF<sub>3</sub>~~
	~~\| CH<sub>4</sub>~~
	\|-
	~~\| Ar~~
	~~\| H<sub>2</sub>~~
	\|}		\|}
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
Line 208:		Line 193:
	* Coil generator		* Coil generator
	* Platen generator		* Platen generator
	~~\| style="background:WhiteSmoke; color:black" \|~~
	* RF generator
	\| style="background:WhiteSmoke; color:black" \|		\| style="background:WhiteSmoke; color:black" \|
	* Coil generator		* Coil generator
Line 225:		Line 208:
	\| style="background:lightgrey; color:black" colspan="2"\| Loading via two cassette loading stations pumped down at vacuum		\| style="background:lightgrey; color:black" colspan="2"\| Loading via two cassette loading stations pumped down at vacuum
	\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock		\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock
	~~\| style="background:lightgrey; color:black" \| Manual loading directly into process chamber~~
	\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock		\| style="background:lightgrey; color:black" \| Loading via dedicated two-slot carousel load lock
	\| style="background:lightgrey; color:black" \| Automatic loading via load lock		\| style="background:lightgrey; color:black" \| Automatic loading via load lock
Line 256:		Line 238:
	* Parameter ramping		* Parameter ramping
	* Optical endpoint detection		* Optical endpoint detection
	~~\| style="background:WhiteSmoke; color:black" \|~~
	* Laser endpoint detection
	\| style="background:WhiteSmoke; color:black" \|		\| style="background:WhiteSmoke; color:black" \|
	* Parameter ramping		* Parameter ramping
Line 297:		Line 277:
	* Al, Cr, Ti, W, Mo, Nb		* Al, Cr, Ti, W, Mo, Nb
	* Resists		* Resists
	~~\| style="background:lightgrey; color:black" \|~~
	* Silicon, Silicon oxide, silicon nitride
	* Fused silica
	* Sapphire
	* SiC
	* GaAs, GaN, InP, with epitaxial layers
	* Resists (at low temperature processing)
	\| style="background:lightgrey; color:black" \|		\| style="background:lightgrey; color:black" \|
	* Silicon, Silicon oxide, silicon nitride		* Silicon, Silicon oxide, silicon nitride
Line 323:		Line 296:
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link]
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link]
	~~\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=155 Link]~~
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link]
	\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link]		\| style="background:WhiteSmoke; color:black" \| [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link]
	\|-		\|-
	\|}		\|}

← Older revision		Revision as of 14:15, 15 January 2026
Line 35:		Line 35:
	\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!		\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
	\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs		\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.
			Etching of SiO2 and SiN on III-V materials
	\| style="background:WhiteSmoke; color:black"\| Physical Etching of all materials		\| style="background:WhiteSmoke; color:black"\| Physical Etching of all materials
	\|- valign="top"		\|- valign="top"

← Older revision		Revision as of 14:08, 18 November 2024
Line 33:		Line 33:
	\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo		\| style="background:WhiteSmoke; color:black"\| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
	\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs		\| style="background:WhiteSmoke; color:black"\| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs

← Older revision		Revision as of 10:15, 2 December 2021
Line 28:		Line 28:
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 4" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 4" wafers
	\| style="background:WhiteSmoke; color:black"\| Silicon etching of 4" wafers		\| style="background:WhiteSmoke; color:black"\| Silicon etching of 4" wafers
	\| style="background:WhiteSmoke; color:black"\| Research tool into silicon etching		\| style="background:WhiteSmoke; color:black"\| Research tool into silicon etching - only a few special recipes!
	\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Silicon etching of 6" wafers on 6" wafers
	\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers		\| style="background:WhiteSmoke; color:black"\| Etching of silicon oxides or nitrides on 6" wafers