Specific Process Knowledge/Etch/DRIE-Pegasus/processC - Revision history

Jmli at 10:01, 4 September 2025

2025-09-04T10:01:05Z

← Older revision		Revision as of 12:01, 4 September 2025
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	{{contentbydryetch}}		{{contentbydryetch}}
	<!--Checked for updates on 2/02-2023 - ok/jmli -->		<!--Checked for updates on 2/02-2023 - ok/jmli -->
			<!--Checked for updates on 4/9-2025 - ok/jmli -->

	Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.		Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.

Jmli at 11:02, 28 June 2023

2023-06-28T11:02:30Z

← Older revision		Revision as of 13:02, 28 June 2023
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	<!--Checked for updates on 14/5-2018 - ok/jmli -->		<!--Checked for updates on 14/5-2018 - ok/jmli -->
	== Process C ==		== Process C ==
	{{~~Template:Author-jmli1~~}}		{{contentbydryetch}}
	<!--Checked for updates on 2/02-2023 - ok/jmli -->		<!--Checked for updates on 2/02-2023 - ok/jmli -->

Jmli: /* Process C */

2023-06-28T11:02:02Z

Process C

← Older revision		Revision as of 13:02, 28 June 2023
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	<!--Checked for updates on 2/02-2023 - ok/jmli -->		<!--Checked for updates on 2/02-2023 - ok/jmli -->

	Process C is ~~labelled Nano silicon etch~~. ~~In the acceptance test the process~~ was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.		Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.

	The 100 mm wafers had an Al mask made by lift-off:		The 100 mm wafers had an Al mask made by lift-off:

Jmli at 13:43, 2 February 2023

2023-02-02T13:43:59Z

← Older revision		Revision as of 15:43, 2 February 2023
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	<!--Checked for updates on 14/5-2018 - ok/jmli -->		<!--Checked for updates on 14/5-2018 - ok/jmli -->
	== Process C ==		== Process C ==
			{{Template:Author-jmli1}}
			<!--Checked for updates on 2/02-2023 - ok/jmli -->

	Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.		Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.

Jmli: /* Process C */

2021-08-10T07:19:18Z

Process C

← Older revision		Revision as of 09:19, 10 August 2021
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	\|		\|
	\|-		\|-
	! Etched depth (µm)		! Etched depth (nm)
	\| 300		\| 300
	\|		\|

Jmli: /* Process C */

2021-08-10T07:18:59Z

Process C

← Older revision		Revision as of 09:18, 10 August 2021
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	! Average result		! Average result
	\|-		\|-
	! Etch rate (µm/min)		! Etch rate (nm/min)
	\| Not specified		\| Not specified
	\|		\|

Jmli at 15:49, 25 November 2019

2019-11-25T15:49:53Z

← Older revision		Revision as of 17:49, 25 November 2019
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processC click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processC click here]'''
	<!--Checked for updates on 14/5-2018 - ok/jmli -->		<!--Checked for updates on 14/5-2018 - ok/jmli -->
	== Process C ==		== Process C ==

	Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm ~~Danchip~~ wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.		Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.

	The 100 mm wafers had an Al mask made by lift-off:		The 100 mm wafers had an Al mask made by lift-off:
	# 80 nm of spin coated ZEP520A E-beam resist		# 80 nm of spin coated ZEP520A E-beam resist
	# Patterned by E-beam ~~lithograph~~		# Patterned by E-beam lithography
	# 20 nm Al deposited and patterned by lift-off		# 20 nm Al deposited and patterned by lift-off
	# ~ 99 % etch load		# ~ 99 % etch load
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	\|-		\|-
	! Selectivity to resist		! Selectivity to resist
	\| Not ~~speicified~~		\| Not specified
	\|		\|
	\|-		\|-
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	\|-		\|-
	! Common		! Common
	\| colspan="4" \| Temperature 10 ~~degs~~, HBC 10 torr, long funnel, with baffle & 100 mm spacers		\| colspan="4" \| Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers
	\|}		\|}

Bghe: /* Process C */

2019-01-29T08:46:58Z

Process C

← Older revision		Revision as of 10:46, 29 January 2019
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	\| colspan="4" \| Temperature 10 degs, HBC 10 torr, long funnel, with baffle & 100 mm spacers		\| colspan="4" \| Temperature 10 degs, HBC 10 torr, long funnel, with baffle & 100 mm spacers
	\|}		\|}

			<gallery>

			Image:c1 30 nm dots.jpg
			Image:c1 50 nm dots 2.jpg
			Image:r1 300 nm dots 1.jpg

			</gallery>

Jmli at 08:58, 14 May 2018

2018-05-14T08:58:15Z

← Older revision		Revision as of 10:58, 14 May 2018
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processC click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processC click here]'''
	<!--Checked for updates on 2/2-~~2016~~ - ok/jmli -->		<!--Checked for updates on 14/5-2018 - ok/jmli -->
	== Process C ==		== Process C ==

Jmli at 09:16, 2 February 2016

2016-02-02T09:16:10Z

← Older revision		Revision as of 11:16, 2 February 2016
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processC click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processC click here]'''
			<!--Checked for updates on 2/2-2016 - ok/jmli -->
	== Process C ==		== Process C ==