Specific Process Knowledge/Etch/DRIE-Pegasus/processA - Revision history

Jmli at 09:41, 21 October 2025

2025-10-21T09:41:36Z

← Older revision		Revision as of 11:41, 21 October 2025
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	<!--Checked for updates on 2/10-2020 - ok/jmli -->		<!--Checked for updates on 2/10-2020 - ok/jmli -->
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	{{contentbydryetch}}		{{contentbydryetch}}

Mmat: /* Results: Optical images */

2025-06-03T07:52:07Z

Results: Optical images

← Older revision		Revision as of 09:52, 3 June 2025
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	</gallery>		</gallery>
	''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).''		''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).''
			<br><br>
	<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">		<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
	image:C01549.01-A.jpg\|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.		image:C01549.01-A.jpg\|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.

Mmat: /* Results: Optical images */

2025-06-03T07:51:27Z

Results: Optical images

← Older revision		Revision as of 09:51, 3 June 2025
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	image:C01548.04-A.jpg\|Wafer C01548.04: 35 % exposed area		image:C01548.04-A.jpg\|Wafer C01548.04: 35 % exposed area
	image:C01548.05-A.jpg\|Wafer C01548.05: 50 % exposed area		image:C01548.05-A.jpg\|Wafer C01548.05: 50 % exposed area
	~~Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform.~~
	</gallery>		</gallery>
			''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).''

	<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">		<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">

Jmli: /* Quality control procedure */

2024-05-23T13:51:36Z

Quality control procedure

← Older revision		Revision as of 15:51, 23 May 2024
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	\|-		\|-
	\|Etch rate in Si		\|Etch rate in Si
	\|17 - 19 µm/min		\|16 - 18.8 µm/min
	\|-		\|-
	\|Non-uniformity		\|Non-uniformity

Jmli: /* Quality control procedure */

2024-05-23T13:47:24Z

Quality control procedure

← Older revision		Revision as of 15:47, 23 May 2024
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	\|-		\|-
	\|Etch rate in Si		\|Etch rate in Si
	\|21 - 28 µm/min		\|17 - 19 µm/min
	\|-		\|-
	\|Non-uniformity		\|Non-uniformity

Jmli: /* Process A acceptance test */

2023-06-28T10:52:19Z

Process A acceptance test

← Older revision		Revision as of 12:52, 28 June 2023
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	\|}		\|}

	== Process A ~~acceptance~~ test==		== Process A test==
	~~{{Template:Author-jmli1}}~~
	~~<!--Checked for updates on 2/02-2023 - ok/jmli -->~~
	~~<!--Checked for updates on 28/6-2023 - ok/jmli -->~~

	~~{{contentbydryetch}}~~

	Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.		Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.

Jmli at 10:51, 28 June 2023

2023-06-28T10:51:45Z

← Older revision		Revision as of 12:51, 28 June 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA click here]'''
	<!--Checked for updates on 2/10-2020 - ok/jmli -->		<!--Checked for updates on 2/10-2020 - ok/jmli -->
			<!--Checked for updates on 28/6-2023 - ok/jmli -->

			{{contentbydryetch}}

	== Effects on Process A of showerhead change in December 2014 ==		== Effects on Process A of showerhead change in December 2014 ==
	~~{{Template:Author-jmli1}}~~
	~~<!--Checked for updates on 2/02-2023 - ok/jmli -->~~

	The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange\|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.		The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange\|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.

Jmli: /* Process A acceptance test */

2023-06-28T10:43:35Z

Process A acceptance test

← Older revision		Revision as of 12:43, 28 June 2023
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			<!--Checked for updates on 28/6-2023 - ok/jmli -->

	Process A is ~~labelled Large~~ trench (80μm wide) ~~150μm~~ depth. In the ~~acceptance test the process was~~ run on a 150 mm ~~SPTS~~ wafer with 12-13 % etch load.		{{contentbydryetch}}

			Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.

	{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"		{\| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"

Jmli at 13:41, 2 February 2023

2023-02-02T13:41:27Z

← Older revision		Revision as of 15:41, 2 February 2023
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	== Effects on Process A of showerhead change in December 2014 ==		== Effects on Process A of showerhead change in December 2014 ==
			{{Template:Author-jmli1}}
			<!--Checked for updates on 2/02-2023 - ok/jmli -->

	The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange\|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.		The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange\|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.

Jmli: /* Process A acceptance test */

2023-02-02T13:41:11Z

Process A acceptance test

← Older revision		Revision as of 15:41, 2 February 2023
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	== Process A acceptance test==		== Process A acceptance test==
			{{Template:Author-jmli1}}
			<!--Checked for updates on 2/02-2023 - ok/jmli -->

	Process A is labelled Large trench (80μm wide) 150μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.		Process A is labelled Large trench (80μm wide) 150μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.