Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch - Revision history

Prakus at 13:34, 28 July 2025

2025-07-28T13:34:22Z

← Older revision		Revision as of 15:34, 28 July 2025
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	'''With DUV mask on ~300 nm SRN layer'''		'''With DUV mask on ~300 nm SRN layer'''

	[[File:SRN_slowetch_profilealong center.png\|800px\|left\|thumb\|Process: ''Slowetch recipe for 10 mins'', DUV mask ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>		[[File:SRN_slowetch_profilealong center.png\|800px\|left\|thumb\|Process: ''Slowetch recipe for 10 mins'', DUV mask (with Barc) ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>
	Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right).]]		Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right), the etch rate is ~28 nm/min.]]

Prakus at 13:30, 28 July 2025

2025-07-28T13:30:30Z

← Older revision		Revision as of 15:30, 28 July 2025
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	====Etch rate & uniformity====		====Etch rate & uniformity====

			'''Recipe: ''Slowetch 2'''''

	'''SRN (LPCVD) etch uniformity on 6″ wafer ~~with ''Slowetch 2'' recipe~~'''		'''SRN (LPCVD) etch uniformity on 6″ wafer'''
	[[File:slowetch2_100% loadSRN.png\|400px\|left\|thumb\|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]]		[[File:slowetch2_100% loadSRN.png\|400px\|left\|thumb\|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]]
	[[File:slowetch2_100% loadSRN_etchrate.png\|400px\|left\|thumb\|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]		[[File:slowetch2_100% loadSRN_etchrate.png\|400px\|left\|thumb\|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]
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	'''SRN (LPCVD) etch uniformity on 6″ wafer ~~with ''Slowetch'' recipe~~'''
			'''Recipe: ''Slowetch'''''

			'''SRN (LPCVD) etch uniformity on 6″ wafer '''

	[[File:SRN_slowetch_data_100%load.png\|400px\|left\|thumb\|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>		[[File:SRN_slowetch_data_100%load.png\|400px\|left\|thumb\|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>

Prakus at 13:27, 28 July 2025

2025-07-28T13:27:42Z

← Older revision	Revision as of 15:27, 28 July 2025
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		'''With DUV mask on ~300 nm SRN layer'''

		[[File:SRN_slowetch_profilealong center.png\|800px\|left\|thumb\|Process: ''Slowetch recipe for 10 mins'', DUV mask ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>
		Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right).]]

Prakus: /* Silicon Nitride Recipe */

2025-07-28T13:09:08Z

Silicon Nitride Recipe

← Older revision		Revision as of 15:09, 28 July 2025
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	====Etch rate & uniformity====		====Etch rate & uniformity====

Prakus at 13:08, 28 July 2025

2025-07-28T13:08:22Z

← Older revision		Revision as of 15:08, 28 July 2025
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	'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch 2'' recipe'''		'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch 2'' recipe'''
	[[File:slowetch2_100% loadSRN.png\|400px\|left\|thumb\|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]]		[[File:slowetch2_100% loadSRN.png\|400px\|left\|thumb\|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]]
	[[File:slowetch2_100% loadSRN_etchrate.png\|400px\|left\|thumb\|Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]		[[File:slowetch2_100% loadSRN_etchrate.png\|400px\|left\|thumb\|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]
	[[File:SRN_etch_rate_uniformity_nochambercondition.png\|400px\|left\|thumb\|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]]		[[File:SRN_etch_rate_uniformity_nochambercondition.png\|400px\|left\|thumb\|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]]

Prakus: /* Etch rate uniformity & etch rate */

2025-07-28T12:30:35Z

Etch rate uniformity & etch rate

← Older revision		Revision as of 14:30, 28 July 2025
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	====Etch rate uniformity ~~& etch rate~~====		====Etch rate & uniformity====

Prakus at 12:29, 28 July 2025

2025-07-28T12:29:40Z

← Older revision		Revision as of 14:29, 28 July 2025
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			==== Silicon Nitride Recipe ====

	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"

Prakus: /* Etch rate uniformity & etch rate */

2025-07-28T12:27:57Z

Etch rate uniformity & etch rate

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 '''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''
-[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
+[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>
 Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]

Prakus: /* Etch rate uniformity & etch rate */

2025-07-28T12:22:48Z

Etch rate uniformity & etch rate

← Older revision		Revision as of 14:22, 28 July 2025
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	'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''		'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''

	[[File:SRN_slowetch_data_100%load.png\|400px\|left\|thumb\|Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]		[[File:SRN_slowetch_data_100%load.png\|400px\|left\|thumb\|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
			Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]

Prakus: /* Etch rate uniformity & etch rate */

2025-07-28T12:18:21Z

Etch rate uniformity & etch rate

← Older revision		Revision as of 14:18, 28 July 2025
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	<nowiki>*</nowiki>The process was repeated twice, but only one set of data is presented here.<br>		<nowiki>*</nowiki>The process was repeated twice, but only one set of data is presented here.<br>