Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch - Revision history

Bghe at 10:45, 7 April 2026

2026-04-07T10:45:05Z

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 ==SiO2 etch with Cr mask==
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 File:C09721_center_21.jpg
 File:C09721_center_22.jpg
 </gallery>

Bghe at 10:43, 5 February 2026

2026-02-05T10:43:26Z

← Older revision		Revision as of 12:43, 5 February 2026
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	===Results with SiO2_res_10 and with with the electro magnets on===		===Results with SiO2_res_10 and with with the electro magnets on===
	[[File:Contour Plot Y31 EM_02_30 white to blue.jpg\|400px\|thumb\|left\|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]		The SiO2:res_10 recipe was tested with the electromagnets on but it seems to no no good for the results.[[File:Contour Plot Y31 EM_02_30 white to blue.jpg\|400px\|thumb\|left\|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]
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	Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled.		Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled.

	*Removing the H2 from the recipe to get less redeposition ~~@ 200W~~ platen power, EM:02/30A		*Removing the H2 from the recipe to get less redeposition at lower platen power (200W), EM:02/30A. Se result below. This gave significantly lower etch rate and no etching in the smallest openings.

	<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5">		<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5">

Bghe: /* Results with SiO2_res_10 and EM */

2026-02-05T10:37:25Z

Results with SiO2_res_10 and EM

← Older revision		Revision as of 12:37, 5 February 2026
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	===Results with SiO2_res_10 and EM===		===Results with SiO2_res_10 and with with the electro magnets on===
	[[File:Contour Plot Y31 EM_02_30 white to blue.jpg\|400px\|thumb\|left\|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]		[[File:Contour Plot Y31 EM_02_30 white to blue.jpg\|400px\|thumb\|left\|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]
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Bghe: /* SiO2 Etch using resist as masking material */

2026-02-04T13:05:06Z

SiO2 Etch using resist as masking material

← Older revision		Revision as of 15:05, 4 February 2026
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	</gallery>		</gallery>

	Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip ~~that was placed~~ in the center of a 6" wafer. The Etch profile is more ~~angles~~.		Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled.


	*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A		*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A
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	File:C09975_05.jpg		File:C09975_05.jpg
	</gallery>		</gallery>
	*I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask\|EM with resist mask]]
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Bghe: /* SiO2 Etch using resist as masking material */

2026-02-04T13:00:28Z

SiO2 Etch using resist as masking material

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 Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles.
 *I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask|EM with resist mask]]
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Bghe: /* SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch */

2024-02-05T15:00:23Z

SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch

← Older revision		Revision as of 17:00, 5 February 2024
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	===SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch===		===SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch===
	Barc etch and Cr etch were done in ICP metal using end point detection. The sample was a full 6" wafer		Barc etch and Cr etch were done in ICP metal using end point detection. The sample was a full 6" wafer
	<gallery caption="SiO2_res_10 2x5:00 min with 3 min TDESC clean in between 100 nm Cr mask ~~[[Main_Page/Process_Logs/bghe/Cr_etch]]~~, with 500 nm resist" widths="200px" heights="200px" perrow="6">		<gallery caption="SiO2_res_10 2x5:00 min with 3 min TDESC clean in between 100 nm Cr mask, with 500 nm resist" widths="200px" heights="200px" perrow="6">
	File:C041630_center_07.jpg		File:C041630_center_07.jpg
	File:C041630_center_08.jpg		File:C041630_center_08.jpg
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	<gallery caption="SiO2_res_10 5:00 min 100 nm Cr mask ~~[[Main_Page/Process_Logs/bghe/Cr_etch]]~~, with 500 nm resist, resist/Cr stripped after etch in plasma asher 35min" widths="250px" heights="250px" perrow="4">		<gallery caption="SiO2_res_10 5:00 min 100 nm Cr mask, with 500 nm resist, resist/Cr stripped after etch in plasma asher 35min" widths="250px" heights="250px" perrow="4">
	File:S0411376_profile_20.jpg\| 200nm/400nm		File:S0411376_profile_20.jpg\| 200nm/400nm
	File:S0411376_profile_13.jpg\|250nm/500nm		File:S0411376_profile_13.jpg\|250nm/500nm
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	</gallery>		</gallery>


	===Testing with electromagnetic coils /Cr mask===		===Testing with electromagnetic coils /Cr mask===

Bghe: /* SiO2 etch with Cr mask */

2024-02-05T14:56:50Z

SiO2 etch with Cr mask

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 {{CC-bghe2}} <br>
 *[[/Cr mask|More tests with Cr mask]]
 ===Testing with electromagnetic coils /Cr mask===

Bghe: /* SiO2 etch with Cr mask */

2024-02-05T14:47:49Z

SiO2 etch with Cr mask

← Older revision		Revision as of 16:47, 5 February 2024
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	==SiO2 etch with Cr mask==		==SiO2 etch with Cr mask==
	{{CC-bghe2}} <br>		{{CC-bghe2}} <br>
			*[[/Cr mask\|More tests with Cr mask]]

	===Testing with electromagnetic coils /Cr mask===		===Testing with electromagnetic coils /Cr mask===
	{{CC-bghe2}} <br>		{{CC-bghe2}} <br>
	*[[/Cr mask\|More tests with Cr mask]]

	When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer.		When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer.

Bghe: /* Testing with electromagnetic coils /Cr mask */

2024-02-05T14:46:45Z

Testing with electromagnetic coils /Cr mask

← Older revision		Revision as of 16:46, 5 February 2024
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	</gallery>		</gallery>

	==~~Testing~~ with ~~electromagnetic coils /~~Cr mask==		==SiO2 etch with Cr mask==
	{{CC-bghe2}} <br>		{{CC-bghe2}} <br>

			===Testing with electromagnetic coils /Cr mask===
			{{CC-bghe2}} <br>
			*[[/Cr mask\|More tests with Cr mask]]

	When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer.		When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer.
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	File:C09721_center_22.jpg		File:C09721_center_22.jpg
	</gallery>		</gallery>

	*[[/Cr mask\|More tests with Cr mask]]

Bghe: /* SiO2 Etch using aSi as masking material */

2024-02-05T14:44:12Z

SiO2 Etch using aSi as masking material

← Older revision		Revision as of 16:44, 5 February 2024
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	{{CC-bghe2}} <br>		{{CC-bghe2}} <br>
	I ~~am now~~ starting up development of SiO2 etch using aSi as masking material. <br>		I was starting up development of SiO2 etch using aSi as masking material. This is on pause because the results did not look promishing on high aspect ratio structures wit DUV pattern due to large faceting on the aSi mask. I turned to Cr mask instead <br>
	The samples I use are:		The samples I use are:
	*6" Si afters with oxide (2µm),		*6" Si afters with oxide (2µm),
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	</gallery>		</gallery>


	==Testing with electromagnetic coils /Cr mask==		==Testing with electromagnetic coils /Cr mask==