Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch - Revision history

Bghe: /* Adding electromagnets (EM) to see if that could imporve the uniformity */

2023-09-06T13:27:19Z

Adding electromagnets (EM) to see if that could imporve the uniformity

← Older revision		Revision as of 15:27, 6 September 2023
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	File:SRN etch uniformity DOE2_Post_II_21.jpg		File:SRN etch uniformity DOE2_Post_II_21.jpg
	</gallery>		</gallery>
	====Adding electromagnets (EM) to see if that could ~~imporve~~ the uniformity====		====Adding electromagnets (EM) to see if that could improve the uniformity====
	Recipe used: SiO2_res_10<br>		Recipe used: SiO2_res_10<br>
	[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]		[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
	[[File:Contour Plot SNR_a12 etch rate.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]		[[File:Contour Plot SNR_a12 etch rate.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]

2023-09-06T13:27:01Z

Etch rate uniformity

← Older revision		Revision as of 15:27, 6 September 2023
Line 87:		Line 87:
	File:SRN etch uniformity DOE2_Post_II_21.jpg		File:SRN etch uniformity DOE2_Post_II_21.jpg
	</gallery>		</gallery>
			====Adding electromagnets (EM) to see if that could imporve the uniformity====
			Recipe used: SiO2_res_10<br>
	[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]		[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
	[[File:Contour Plot SNR_a12 etch rate.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]		[[File:Contour Plot SNR_a12 etch rate.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]

2023-09-06T13:25:10Z

Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching

← Older revision		Revision as of 15:25, 6 September 2023
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	[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]		[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
			[[File:Contour Plot SNR_a12 etch rate.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]

2023-09-04T09:06:55Z

Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching

← Older revision		Revision as of 11:06, 4 September 2023
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	</gallery>		</gallery>

	[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]		[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]

2023-09-04T09:06:36Z

Etch rate uniformity

← Older revision		Revision as of 11:06, 4 September 2023
Line 87:		Line 87:
	File:SRN etch uniformity DOE2_Post_II_21.jpg		File:SRN etch uniformity DOE2_Post_II_21.jpg
	</gallery>		</gallery>

			[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]

2023-08-22T11:30:04Z

Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching

← Older revision		Revision as of 13:30, 22 August 2023
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	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"
	!~~Typical~~ results		!Measured results
	!'''SiO2_res_10'''		!'''SiO2_res_10'''
	!'''DOE2/Post_II_21'''		!'''DOE2/Post_II_21'''

2023-08-22T11:29:30Z

Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching

← Older revision		Revision as of 13:29, 22 August 2023
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	\|-		\|-
	\|}		\|}


	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"

2023-08-22T11:28:45Z

← Older revision		Revision as of 13:28, 22 August 2023
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	==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==		==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
			{{CC-bghe2}}<br>
	{\| border="2" cellspacing="2" cellpadding="3"		{\| border="2" cellspacing="2" cellpadding="3"
	!Parameter		!Parameter

2023-08-22T11:28:04Z

← Older revision		Revision as of 13:28, 22 August 2023
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	[[Category: Equipment \|Etch DRIE]]		[[Category: Equipment \|Etch DRIE]]
	[[Category: Etch (Dry) Equipment\|DRIE]]		[[Category: Etch (Dry) Equipment\|DRIE]]
	<br> {{CC-~~bghe2~~}}		<br> {{CC-bghe1}}

	==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==		==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==

2023-08-22T11:19:41Z

← Older revision		Revision as of 13:19, 22 August 2023
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	[[Category: Equipment \|Etch DRIE]]		[[Category: Equipment \|Etch DRIE]]
	[[Category: Etch (Dry) Equipment\|DRIE]]		[[Category: Etch (Dry) Equipment\|DRIE]]
	<br> {{~~CC1~~}}		<br> {{CC-bghe2}}

	==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==		==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==