Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask - Revision history

Mfarin at 07:23, 1 May 2023

2023-05-01T07:23:21Z

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			==Previous work on Peg2==

			*[https://run.unl.pt/bitstream/10362/152030/1/Farinha_2022.pdf SF6/O2 Plasma Etching: Optimizing the CORE process and going into 3D Engineering_November22 by Maria Farinha@DTU Nanolab]

Mfarin: /* Al2O3 mask */

2023-04-27T07:36:49Z

Al2O3 mask

← Older revision		Revision as of 09:36, 27 April 2023
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	\| ''' 1 µm holes''' \|\| [[File:bitmapddddd.jpg\|300px]] [[File:holes.tif.jpg\|300px]] \|\| Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it).		\| ''' 1 µm holes''' \|\| [[File:bitmapddddd.jpg\|300px]] [[File:holes.tif.jpg\|300px]] \|\| Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~16nm of it).
	\|-		\|-
	\| '''200nm nanoholes''' \|\| [[File:nanoHoles 0g 02 v3.jpg\|300px]] [[File:nanoHoles 0g 05 v2.jpg\|300px]] \|\| Visible that after the 90 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~20nm of it). Resist visible on top of the mask since it was etched during the ORE process.		\| '''200nm nanoholes''' \|\| [[File:nanoHoles 0g 02 v3.jpg\|300px]] [[File:nanoHoles 0g 05 v2.jpg\|300px]] \|\| Visible that after the 260 min Al<sub>2</sub>O<sub>3</sub> etch, the mask was correctly etched away confirmed by reaching the silicon (etched ~20nm of it). Resist visible on top of the mask since it was etched during the ORE process.
	\|}		\|}

Mfarin: /* Al2O3 mask */

2023-04-27T07:35:27Z

Al2O3 mask

← Older revision		Revision as of 09:35, 27 April 2023
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	In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development:		In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development:

	# 1 µm width pillars with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).		# 1 µm width pillars with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist).
	# 1 µm width holes with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).		# 1 µm width holes with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist).
	# 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).		# 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV resist).

	The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named ''"barc gentle etch"'', ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br>		The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named ''"barc gentle etch"'', ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br>

Mfarin: /* DREM 0.2kW */

2023-02-23T09:20:53Z

DREM 0.2kW

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	~~= DREM 0.2kW =~~

	~~{{Template:Peg1RecipeTableVerCColors~~
	~~\|TableHeader=DREM 0.2 kW v2~~
	}}
	~~{{Template:Peg1RecipeTableVerCAddrowColors~~
	~~\|RecipeName=DREM 0.2kW~~
	~~\|PriorProcessSteps= Clamp Substrate,Pump to base, home platen matching unit, barc1, stab~~
	~~\|Keywords=~~
	~~\|PlatenPosition=U \|PlatenFrequency=HF \|StabilisationTime= \|StartCycleEndCycle=D/E~~
	~~\|DepositionTime=2.8 \|EtchTime=2.6 \|NumberOfCycles=~~
	~~\|PressureDepDelay= \|PressureDepBoost= \|PressureDepMain=100%~~
	~~\|PressureEtchDelay= \|PressureEtchBoost= \|PressureEtchMain=100%~~
	~~\|C4F8DepDelay=0.3@5 \|C4F8DepBoost= 0.5@15 \|C4F8DepMain=25~~
	~~\|C4F8EtchDelay=0.3@25 \|C4F8EtchBoost= \|C4F8EtchMain=5~~
	~~\|SF6DepDelay=0.3@15 \|SF6DepBoost=0.5@10 \|SF6DepMain=10~~
	~~\|SF6EtchDelay=1.9@10 \|SF6EtchBoost=0.5@20 \|SF6EtchMain=20~~
	~~\|O2Dep= \|O2Etch= \|ArDep=60 \|ArEtch=60~~
	~~\|WCoilDep=0.25 \|WCoilEtch=0.25 \|WPlatenDep=1~~
	~~\|WPlatenEtchDelay=0.9@1 \|WPlatenEtchBoost=1@20 \|WPlatenEtchMain=1~~
	~~\|%CoilDepLoad=40 \|%CoilDepTune=50 \|%CoilEtchLoad=40 \|%CoilEtchTune=50~~
	~~\|%PlatenDepLoad=38.2 \|%PlatenDepTune=53.8 \|%PlatenEtchLoad=38.2 \|%PlatenEtchTune=53.8~~
	~~\|Temperature=0~~
	~~\|Link2RecipeRun=[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/DREM0.2kW \| '''1''']]~~
	~~\|Link2RecipeRun=[[Main Page/Process Logs/jmli/Pegasus3/DREM/DREM 0.2kW newMFC \| '''9''']]~~
	}}
	\|}

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Mfarin: /* ORE process */

2023-02-23T09:18:10Z

ORE process

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 [[File:cpr + iso x3 meas.png|400px|left|thumb|'''''x3 anisotropic + isotropic etch.<br>
 Photo: Maria Farinha @DTU Nanolab, June 2022''''']]
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 = DREM 0.2kW =

Mfarin: /* DREM 0.2kW */

2023-02-23T09:17:34Z

DREM 0.2kW

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	= DREM 0.2kW =		= DREM 0.2kW =

Mfarin: /* ORE process */

2023-02-23T09:08:27Z

ORE process

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	= DREM 0.2kW =		= DREM 0.2kW =

Mfarin: /* DREM 0.2kW */

2023-02-23T09:07:50Z

DREM 0.2kW

← Older revision		Revision as of 11:07, 23 February 2023
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			<br>

	= DREM 0.2kW =		= DREM 0.2kW =

Mfarin: /* Isotropic etch */

2023-02-23T09:07:29Z

Isotropic etch

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 Photo: Maria Farinha @DTU Nanolab, June 2022''''']]
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Mfarin: /* Nanoholes */

2023-02-17T11:56:18Z

Nanoholes

← Older revision		Revision as of 13:56, 17 February 2023
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	\|} ''*The E<sub>2</sub>-time value was changed and observed.''		\|} ''*The E<sub>2</sub>-time value was changed and observed.''
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	Regarding the measurements of the profiles, in a) the depth reached 3.17 µm with 0-15s of ramping, b) reached 3.21 µm with 1-15s of ramping, c) reached 2.87 µm whit 5-15s of ramping and d) reached 3.63 µm with 15 s without ramping. Even though the etching ramping times may appear similar, ~~their~~ ER ~~have different~~ and ~~can be used accordingly to each requirements~~.		Regarding the measurements of the profiles, in a) the depth reached 3.17 µm with 0-15s of ramping, b) reached 3.21 µm with 1-15s of ramping, c) reached 2.87 µm whit 5-15s of ramping and d) reached 3.63 µm with 15 s without ramping. Even though the etching ramping times may appear similar, there are differences in the feature profile. The ER for 0-15s and 1-15s is around 52 nm/min and for 5-15s and 15s is approximately 48 nm/min.

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← Older revision		Revision as of 11:20, 23 February 2023
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	~~= DREM 0.2kW =~~

	~~{{Template:Peg1RecipeTableVerCColors~~
	~~\|TableHeader=DREM 0.2 kW v2~~
	}}
	~~{{Template:Peg1RecipeTableVerCAddrowColors~~
	~~\|RecipeName=DREM 0.2kW~~
	~~\|PriorProcessSteps= Clamp Substrate,Pump to base, home platen matching unit, barc1, stab~~
	~~\|Keywords=~~
	~~\|PlatenPosition=U \|PlatenFrequency=HF \|StabilisationTime= \|StartCycleEndCycle=D/E~~
	~~\|DepositionTime=2.8 \|EtchTime=2.6 \|NumberOfCycles=~~
	~~\|PressureDepDelay= \|PressureDepBoost= \|PressureDepMain=100%~~
	~~\|PressureEtchDelay= \|PressureEtchBoost= \|PressureEtchMain=100%~~
	~~\|C4F8DepDelay=0.3@5 \|C4F8DepBoost= 0.5@15 \|C4F8DepMain=25~~
	~~\|C4F8EtchDelay=0.3@25 \|C4F8EtchBoost= \|C4F8EtchMain=5~~
	~~\|SF6DepDelay=0.3@15 \|SF6DepBoost=0.5@10 \|SF6DepMain=10~~
	~~\|SF6EtchDelay=1.9@10 \|SF6EtchBoost=0.5@20 \|SF6EtchMain=20~~
	~~\|O2Dep= \|O2Etch= \|ArDep=60 \|ArEtch=60~~
	~~\|WCoilDep=0.25 \|WCoilEtch=0.25 \|WPlatenDep=1~~
	~~\|WPlatenEtchDelay=0.9@1 \|WPlatenEtchBoost=1@20 \|WPlatenEtchMain=1~~
	~~\|%CoilDepLoad=40 \|%CoilDepTune=50 \|%CoilEtchLoad=40 \|%CoilEtchTune=50~~
	~~\|%PlatenDepLoad=38.2 \|%PlatenDepTune=53.8 \|%PlatenEtchLoad=38.2 \|%PlatenEtchTune=53.8~~
	~~\|Temperature=0~~
	~~\|Link2RecipeRun=[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/DREM0.2kW \| '''1''']]~~
	~~\|Link2RecipeRun=[[Main Page/Process Logs/jmli/Pegasus3/DREM/DREM 0.2kW newMFC \| '''9''']]~~
	}}
	\|}

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