Specific Process Knowledge/Etch/DRIE-Pegasus/Etch silicon nanostructures - Revision history

Mmat at 07:27, 3 June 2025

2025-06-03T07:27:15Z

← Older revision		Revision as of 09:27, 3 June 2025
Line 21:		Line 21:
	{\|		{\|
	\| [[Image:DREM2pic1.jpg \|thumb\|x300px\|200nm trenches etched with 100 cycles (cross section view), a smooth sidewall can be seen with less scallop induced roughness]]		\| [[Image:DREM2pic1.jpg \|thumb\|x300px\|200nm trenches etched with 100 cycles (cross section view), a smooth sidewall can be seen with less scallop induced roughness]]
	\| [[Image:DREM2pic2.jpg \|~~frame~~\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
	\|-		\|-
	\| [[Image:DREM2pic3.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM2pic3.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]

Mmat at 07:26, 3 June 2025

2025-06-03T07:26:28Z

Jmli at 06:30, 4 April 2025

2025-04-04T06:30:32Z

← Older revision		Revision as of 08:30, 4 April 2025
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Etch_silicon_nanostructures click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Etch_silicon_nanostructures click here]'''
	<!--Checked for updates on 24/8-2021. ok/ jmli-->		<!--Checked for updates on 24/8-2021. ok/ jmli-->
			<!--Checked for updates on 4/4-2025 - ok/jmli -->

	Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):		Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):

Jmli at 14:13, 24 August 2021

2021-08-24T14:13:02Z

← Older revision		Revision as of 16:13, 24 August 2021
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Etch_silicon_nanostructures click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Etch_silicon_nanostructures click here]'''
			<!--Checked for updates on 24/8-2021. ok/ jmli-->

	Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):		Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):

Bincha at 07:42, 26 April 2019

2019-04-26T07:42:46Z

← Older revision		Revision as of 09:42, 26 April 2019
Line 25:		Line 25:
	\|}		\|}

	Extra caution is required for modification of recipe parameters, it is recommended to monitor the picoscope signals during the process, the process should be aborted if a high reflective power is observed either from coil or platen generators, thus hardware damage can be avoied. For more details, please contact Henri Jansen (henrija@dtu.dk) or Bingdong Chang (bincha@dtu.dk)		Extra caution is required for modification of recipe parameters, it is recommended to monitor the picoscope signals during the process, the process should be aborted manually if a high reflective power is observed either from coil or platen generators, thus hardware damage can be avoied. For more details, please contact Henri Jansen (henrija@dtu.dk) or Bingdong Chang (bincha@dtu.dk)

Bincha at 07:08, 26 April 2019

2019-04-26T07:08:04Z

← Older revision		Revision as of 09:08, 26 April 2019
Line 24:		Line 24:
	\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]		\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]
	\|}		\|}

			Extra caution is required for modification of recipe parameters, it is recommended to monitor the picoscope signals during the process, the process should be aborted if a high reflective power is observed either from coil or platen generators, thus hardware damage can be avoied. For more details, please contact Henri Jansen (henrija@dtu.dk) or Bingdong Chang (bincha@dtu.dk)

Bincha at 07:04, 26 April 2019

2019-04-26T07:04:53Z

← Older revision		Revision as of 09:04, 26 April 2019
Line 18:		Line 18:
	Below are some etched silicon nanostructures with the recipe '''DREM 0.5kW nano'''		Below are some etched silicon nanostructures with the recipe '''DREM 0.5kW nano'''
	{\|		{\|
	\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view), a smooth sidewall can be seen with less scallop induced roughness]]
	\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
	\|-		\|-

Bincha at 07:03, 26 April 2019

2019-04-26T07:03:41Z

← Older revision		Revision as of 09:03, 26 April 2019
Line 2:		Line 2:

	Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):		Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):
			{\|
	~~<gallery caption="~~Parameter settings DREM 1kW nano~~" widths="600" heights="300" perrow="1">~~		\| [[Image:DREM1.jpg \|frame\|x300px\|Parameter settings DREM 1kW nano]]
	~~image~~:~~DREM1~~.jpg		\| [[Image:DREM2.jpg \|frame\|x300px\|Parameter settings DREM 0.5kW nano]]
	~~</gallery>~~		\|}

	~~<gallery caption="~~Parameter settings DREM 0.5kW nano~~" widths="600" heights="300" perrow="1">~~
	~~image:DREM2.jpg~~
	~~</gallery>~~

	Below are some etched silicon nanostructures with the recipe '''DREM 1kW nano'''		Below are some etched silicon nanostructures with the recipe '''DREM 1kW nano'''
Line 15:		Line 11:
	\| [[Image:DREM1pic1.jpg \|frame\|x300px\|200nm trenches etched with 125 cycles (cross section view)]]		\| [[Image:DREM1pic1.jpg \|frame\|x300px\|200nm trenches etched with 125 cycles (cross section view)]]
	\| [[Image:DREM1pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM1pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
			\|-
	\| [[Image:DREM1pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM1pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]
			\| [[Image:DREM1pic4.jpg \|frame\|x300px\|Zoom in on top of 200nm pillars, showing the scallops (tilted view)]]
	\|}		\|}

Bincha at 06:59, 26 April 2019

2019-04-26T06:59:47Z

← Older revision		Revision as of 08:59, 26 April 2019
Line 22:		Line 22:
	\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]
	\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
			\|-
	\| [[Image:DREM2pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM2pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]
	\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]		\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]
	\|}		\|}

Bincha at 06:59, 26 April 2019

2019-04-26T06:59:24Z

← Older revision		Revision as of 08:59, 26 April 2019
Line 21:		Line 21:
	{\|		{\|
	\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]
	\| [[Image:~~DREM1pic2~~.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
	\| [[Image:~~DREM1pic3~~.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM2pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]
			\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]
	\|}		\|}

← Older revision		Revision as of 09:27, 3 June 2025
Line 21:		Line 21:
	{\|		{\|
	\| [[Image:DREM2pic1.jpg \|thumb\|x300px\|200nm trenches etched with 100 cycles (cross section view), a smooth sidewall can be seen with less scallop induced roughness]]		\| [[Image:DREM2pic1.jpg \|thumb\|x300px\|200nm trenches etched with 100 cycles (cross section view), a smooth sidewall can be seen with less scallop induced roughness]]
	\| [[Image:DREM2pic2.jpg \|~~frame~~\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
	\|-		\|-
	\| [[Image:DREM2pic3.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM2pic3.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]

← Older revision		Revision as of 08:59, 26 April 2019
Line 22:		Line 22:
	\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]
	\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
			\|-
	\| [[Image:DREM2pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM2pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]
	\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]		\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]
	\|}		\|}

← Older revision		Revision as of 08:59, 26 April 2019
Line 21:		Line 21:
	{\|		{\|
	\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic1.jpg \|frame\|x300px\|200nm trenches etched with 100 cycles (cross section view)]]
	\| [[Image:~~DREM1pic2~~.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
	\| [[Image:~~DREM1pic3~~.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM2pic3.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]
			\| [[Image:DREM2pic4.jpg \|frame\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]
	\|}		\|}

← Older revision		Revision as of 09:26, 3 June 2025
Line 5:		Line 5:
	Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):		Based on the so called DREM process, there are two recipes on DRIE-Pegasus 1 which are suitable for etching silicon nanostructures. The recipes are called '''DREM 1kW nano''' and '''DREM 0.5kW nano'''. In '''DREM 1kW nano''' a higher coil power and larger gas flow rates are applied, making it suitable for etching high aspect ratio nanostructures (AR around 25 can be achieved depending on the patterns and resist used). In '''DREM 0.5kW nano''' both the coil power and gas flow rates are reduced, thus the scallop size can be reduced remarkably down to 16nm, giving a smooth sidewall on the nanostructures, while the aspect ratio can be limited. The recipes can be chosen based on the purpose of users, and the parameters are listed as below (different parameters are highlighted):
	{\|		{\|
	\| [[Image:DREM1.jpg \|~~frame~~\|x300px\|Parameter settings DREM 1kW nano]]		\| [[Image:DREM1.jpg \|thumb\|x300px\|Parameter settings DREM 1kW nano]]
	\| [[Image:DREM2.jpg \|~~frame~~\|x300px\|Parameter settings DREM 0.5kW nano]]		\| [[Image:DREM2.jpg \|thumb\|x300px\|Parameter settings DREM 0.5kW nano]]
	\|}		\|}

	Below are some etched silicon nanostructures with the recipe '''DREM 1kW nano'''		Below are some etched silicon nanostructures with the recipe '''DREM 1kW nano'''
	{\|		{\|
	\| [[Image:DREM1pic1.jpg \|~~frame~~\|x300px\|200nm trenches etched with 125 cycles (cross section view)]]		\| [[Image:DREM1pic1.jpg \|thumb\|x300px\|200nm trenches etched with 125 cycles (cross section view)]]
	\| [[Image:DREM1pic2.jpg \|~~frame~~\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM1pic2.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
	\|-		\|-
	\| [[Image:DREM1pic3.jpg \|~~frame~~\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM1pic3.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]
	\| [[Image:DREM1pic4.jpg \|~~frame~~\|x300px\|Zoom in on top of 200nm pillars, showing the scallops (tilted view)]]		\| [[Image:DREM1pic4.jpg \|thumb\|x300px\|Zoom in on top of 200nm pillars, showing the scallops (tilted view)]]
	\|}		\|}

	Below are some etched silicon nanostructures with the recipe '''DREM 0.5kW nano'''		Below are some etched silicon nanostructures with the recipe '''DREM 0.5kW nano'''
	{\|		{\|
	\| [[Image:DREM2pic1.jpg \|~~frame~~\|x300px\|200nm trenches etched with 100 cycles (cross section view), a smooth sidewall can be seen with less scallop induced roughness]]		\| [[Image:DREM2pic1.jpg \|thumb\|x300px\|200nm trenches etched with 100 cycles (cross section view), a smooth sidewall can be seen with less scallop induced roughness]]
	\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]		\| [[Image:DREM2pic2.jpg \|frame\|x300px\|200nm pillars etched with 100 cycles (cross section view)]]
	\|-		\|-
	\| [[Image:DREM2pic3.jpg \|~~frame~~\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]		\| [[Image:DREM2pic3.jpg \|thumb\|x300px\|200nm pillars etched with 100 cycles (tilted view)]]
	\| [[Image:DREM2pic4.jpg \|~~frame~~\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]		\| [[Image:DREM2pic4.jpg \|thumb\|x300px\|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]]
	\|}		\|}

	Extra caution is required for modification of recipe parameters, it is recommended to monitor the picoscope signals during the process, the process should be aborted manually if a high reflective power is observed either from coil or platen generators, thus hardware damage can be avoied. For more details, please contact Henri Jansen (henrija@dtu.dk) or Bingdong Chang (bincha@dtu.dk)		Extra caution is required for modification of recipe parameters, it is recommended to monitor the picoscope signals during the process, the process should be aborted manually if a high reflective power is observed either from coil or platen generators, thus hardware damage can be avoied. For more details, please contact Henri Jansen (henrija@dtu.dk) or Bingdong Chang (bincha@dtu.dk)